Method of manufacturing a semiconductor device with selectively formed nitride film
A method of manufacturing a semiconductor device includes forming a first film including oxygen, forming a second film including nitrogen, etching surfaces of the first film and the second film using a substance including a halogen, and forming a third film including nitrogen on the surfaces of the first film and the second film. The third film is formed by alternately performing first processes and second processes, with each of the first processes forming a portion of the third film, and each of the second processes etching a portion of the third film using a substance including a halogen.
1 . A method of manufacturing a semiconductor device, the method comprising:
forming a stacked film alternately including a plurality of insulators and a plurality of fourth films;
forming a hole in the stacked film;
forming a first portion of a charge storage film and a semiconductor layer in the hole;
removing the plurality of fourth films to form a plurality of concave portions in the stacked film;
etching surfaces of the plurality of insulators and the first portion from the plurality of concave portions using a substance including a halogen; and
forming a plurality of second portions of the charge storage film and a plurality of electrode layers in the plurality of concave portions,
wherein:
the insulators include oxygen,
the first portion and the second portions include nitrogen, and
the second portions are formed by alternately performing first processes and second processes, each of the first processes forming a portion of the second portions, and each of the second processes etching a portion of the second portions using a substance including a halogen.
2 . The method of claim 1 , wherein the second portions are selectively formed on the surface of the first portion among the surfaces of the insulators and the first portion by alternately performing the first processes and the second processes.
3 . The method of claim 1 , wherein the plurality of insulators include silicon and oxygen, and the first portion and the second portions include silicon and nitrogen.
4 . The method of claim 1 , wherein the first processes are performed using a first gas including silicon and a second gas including nitrogen.
5 . The method of claim 4 , wherein the first gas includes an inorganic compound.
6 . The method of claim 4 , wherein the first gas includes SiH 4 , SiH 3 Cl, SiH 2 Cl 2 or SiHCl 3 , where Si represents silicon, H represents hydrogen, and Cl represents chlorine.
7 . The method of claim 4 , wherein the second gas includes a nitriding agent.
8 . The method of claim 4 , wherein the second gas includes NH 3 or N 2 H 4 , where N represents nitrogen, and H represents hydrogen.
9 . The method of claim 1 , wherein the first processes are performed at 50 Pa or less.
10 . The method of claim 1 , wherein the second processes are performed so that the halogen is added to the second portions.
11 . The method of claim 1 , wherein the second processes are performed using a liquid including the halogen.
12 . The method of claim 1 , wherein the second processes are performed using a substance including F (fluorine), Cl (chlorine), Br (bromine) or I (iodine).
13 . The method of claim 1 , wherein the second processes are performed using F 2 , HF, NF 3 , SiF 4 or ClF, where F represents fluorine, H represents hydrogen, N represents nitrogen, Si represents silicon, and Cl represents chlorine.
14 . The method of claim 1 , wherein the second portions are formed so that a halogen concentration distribution in a first direction in each of the second portions has a plurality of concentration peaks.
15 . The method of claim 14 , wherein the first direction is a thickness direction of the second portions.