Multilayer electronic component
A multilayer electronic component includes a body including a capacitance formation portion in which a plurality of dielectric layers and a plurality of internal electrodes are alternately disposed in a first direction, a first cover portion disposed on one surface of the capacitance formation portion in the first direction and including a dielectric layer, and a second cover portion disposed on the other surface of the capacitance formation portion in the first direction and including a dielectric layer; and an external electrode disposed on the body, wherein a molar ratio of Sn/(Ni+Sn) measured in a central portion of an internal electrode disposed closest to the first cover portion or the second cover portion is 0.00160 or more and 0.0230 or less, and a molar ratio of Sn/(Ni+Sn) measured in a central portion of at least one internal electrode, among the plurality of internal electrodes, is 0.00066 or less.
1 . A multilayer electronic component comprising:
a body including a capacitance formation portion in which a plurality of dielectric layers and a plurality of internal electrodes are alternately disposed in a first direction, a first cover portion disposed on one surface of the capacitance formation portion in the first direction and including a dielectric layer, and a second cover portion disposed on the other surface of the capacitance formation portion in the first direction and including a dielectric layer; and
at least one external electrode disposed on the body,
wherein, when, among the plurality of internal electrodes, an internal electrode disposed closest to the first cover portion is IE1 and an internal electrode disposed closest to the second cover portion is IE2, a molar ratio of Sn/(Ni+Sn) measured in at least one of a central portion of IE1 or a central portion of IE2 is 0.00160 or more and 0.0230 or less, and
a molar ratio of Sn/(Ni+Sn) measured in a central portion of at least one internal electrode, among the plurality of internal electrodes, is 0.00066 or less.
2 . The multilayer electronic component of claim 1 , wherein the molar ratio of Sn/(Ni+Sn) measured in at least one of the central portion of IE1 or the central portion of IE2 is 0.00160 or more and 0.00684 or less.
3 . The multilayer electronic component of claim 1 , wherein the molar ratio of Sn/(Ni+Sn) measured in at least one of the central portion of IE1 or the central portion of IE2 is 0.00330 or more and 0.00684 or less.
4 . The multilayer electronic component of claim 1 , wherein, among the plurality of internal electrodes, a molar ratio of Sn/(Ni+Sn) measured in a central portion of an internal electrode, other than IE1 and IE2, is 0.00066 or less.
5 . The multilayer electronic component of claim 1 , wherein the central portion is a region spaced by 20 nm or more from an interface with the dielectric layer.
6 . The multilayer electronic component of claim 1 , wherein, in each of the plurality of internal electrodes, an Sn amount in a region adjacent to an interface with the dielectric layer is twice larger or more than an Sn amount in a central portion of the corresponding internal electrode.
7 . The multilayer electronic component of claim 6 , wherein the region adjacent to the interface with the dielectric layer is a region within 5 nm from the interface with the dielectric layer, and
the central portion of the corresponding internal electrode is a region spaced by 20 nm or more from the interface with the dielectric layer.
8 . The multilayer electronic component of claim 1 , wherein, among the plurality of internal electrodes, an internal electrode, other than IE1 and IE2, does not contain Sn.
9 . The multilayer electronic component of claim 1 , wherein the internal electrode comprises two or more conductive portions and a disconnection portion disposed between adjacent conductive portions of the two or more conductive portions,
wherein, when a ratio of the sum of lengths of the conductive portions relative to a total length of the internal electrode is referred to as connectivity for an internal electrode, the connectivity in the IE1 and IE2 is 80% or more.
10 . The multilayer electronic component of claim 1 , wherein, among the plurality of internal electrodes, a ratio of the number of internal electrodes of which a molar ratio of Sn/(Ni+Sn) measured in a central portion of each of the internal electrodes is 0.00066 or less is 90% or more.
11 . The multilayer electronic component of claim 1 , wherein, when a region of the capacitance formation portion adjacent to the first cover portion is K1, a region of the capacitance formation portion adjacent to the second cover portion is K2, and a region disposed between K1 and K2 is Kc,
a molar ratio of Sn/(Ni+Sn) measured in a central portion of an internal electrode included in K1 and K2 is 0.00160 or more and 0.0230 or less, and
a molar ratio of Sn/(Ni+Sn) measured in a central portion of an internal electrode included in Kc is 0.00066 or less.
12 . The multilayer electronic component of claim 11 , wherein a ratio of a maximum size of Kc in the first direction relative to a maximum size of the capacitance formation portion in the first direction is 0.9 or more.
13 . The multilayer electronic component of claim 1 , wherein at least one of the first cover portion or the second cover portion comprises at least one dummy electrode,
wherein a molar ratio of Sn/(Ni+Sn) measured in a central portion of the dummy electrode is 0.00160 or more and 0.0230 or less.
14 . The multilayer electronic component of claim 13 , wherein the at least one external electrode comprises first and second external electrodes spaced apart from each other,
wherein the at least one dummy electrode includes a first dummy electrode connected to the first external electrode, and a second dummy electrode disposed spaced apart from the first dummy electrode and connected to the second external electrode.
15 . The multilayer electronic component of claim 14 , wherein an average thickness of at least one of the internal electrodes is 0.35 μm or less.
16 . The multilayer electronic component of claim 1 , wherein an average thickness of at least one of the dielectric layers is 0.37 μm or less.