Display device using semiconductor light-emitting element and manufacturing method thereof
A display device, according to an embodiment of the present invention, comprises a semiconductor light-emitting element, the semiconductor light-emitting element comprising: a first conductive electrode; an undoped semiconductor layer formed on the first conductive electrode; a first conductive semiconductor layer formed on the undoped semiconductor layer; an active layer formed on the first conductive semiconductor layer; a second conductive semiconductor layer formed on the active layer; and a second conductive electrode formed on the second conductive semiconductor layer; wherein the first conductive electrode is formed to cover a part of a side surface of the first conductive semiconductor layer.
1 . A display device comprising:
a semiconductor light emitting diode including:
a first conductivity type electrode;
an undoped semiconductor layer formed on the first conductivity type electrode;
a first conductivity type semiconductor layer formed on the undoped semiconductor layer;
an active layer formed on the first conductivity type semiconductor layer;
a second conductivity type semiconductor layer formed on the active layer; and
a second conductivity type electrode formed on the second conductivity type semiconductor layer;
wherein the first conductivity type electrode is formed to cover a portion of a side surface of the first conductivity type semiconductor layer,
wherein the second conductivity type electrode comprises a transparent electrode layer formed on the second conductivity type semiconductor layer and a magnetic layer formed on the transparent electrode layer,
wherein the second conductivity type electrode is transparent and includes an upper surface that emits light generated in the active layer, and
wherein the magnetic layer is formed to allow the semiconductor light emitting diode to be induced by magnetic force.
2 . The display device of claim 1 , wherein side surfaces of the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are inclined.
3 . The display device of claim 2 , wherein the first conductivity type semiconductor layer includes:
a first layer in contact with the active layer and having a side surface formed to have a first inclination; and
a second layer in contact with the undoped semiconductor layer and having a side surface formed to have a second inclination.
4 . The display device of claim 3 , wherein the first conductivity type semiconductor layer further includes a third layer disposed between the first layer and the second layer and having a side surface formed to have a third inclination.
5 . The display device of claim 3 , wherein the first conductivity type electrode is formed to cover the side surface of the second layer.
6 . The display device of claim 3 , wherein a side surface of the active layer has a same inclination as the first inclination of the first layer.
7 . The display device of claim 6 , wherein at least a portion of a side surface of the second conductivity type semiconductor layer has the same inclination as the first inclination of the first layer and the active layer.
8 . The display device of claim 1 , wherein the semiconductor light emitting diode further includes a passivation layer formed to cover a side surface of the semiconductor light emitting diode and the second conductivity type electrode.