Semiconductor light emitting diode including passivation layer having different thicknesses
A semiconductor light emitting device includes a first conductivity type semiconductor, an active layer on the first conductivity type semiconductor, a second conductivity type semiconductor on the active layer, an electrode layer on the second conductivity type semiconductor, and a passivation layer covering at least side surfaces of the first conductivity type semiconductor, the active layer, the second conductivity type semiconductor, and the electrode layer. The angle between the lower surface and the side surface of the electrode layer is about 45° or more and about 90° or less. The passivation layer includes a first portion disposed on a side surface of the first conductivity type semiconductor and having a first thickness, and a second portion on a side surface of the electrode layer and having a second thickness different from the first thickness.
1 . A semiconductor light emitting device, comprising:
a first conductivity type semiconductor;
an active layer on the first conductivity type semiconductor;
a second conductivity type semiconductor on the active layer;
an electrode layer on the second conductivity type semiconductor; and
a passivation layer covering a side surface of each of the first conductivity type semiconductor, the active layer, the second conductivity type semiconductor, and the electrode layer,
wherein an angle between a lower surface and the side surface of the electrode layer is about 45° or more and about 90° or less, and
wherein the passivation layer comprises:
a first portion on the side surface of the first conductivity type semiconductor, the first portion having a first thickness, and
a second portion on the side surface of the electrode layer, the second portion having a second thickness different from the first thickness, and
wherein the first conductivity type semiconductor has a thickness in a stacking direction of the first conductivity type semiconductor, the active layer, and the second conductivity type semiconductor that is greater than a width of the first conductivity type semiconductor.
2 . The semiconductor light emitting device as claimed in claim 1 , wherein the angle between the lower surface and the side surface of the electrode layer is about 70° or more and about 90° or less.
3 . The semiconductor light emitting device as claimed in claim 1 , wherein the first thickness is about 30 nm to about 100 nm.
4 . The semiconductor light emitting device as claimed in claim 1 , wherein at least a portion of the second portion of the passivation layer has a curved external side surface.
5 . The semiconductor light emitting device as claimed in claim 1 , wherein the side surface of the electrode layer is horizontally offset relative to the side surface of the second conductivity type semiconductor.
6 . The semiconductor light emitting device as claimed in claim 1 , wherein a perimeter of the lower surface of the electrode layer is spaced apart from a perimeter of an upper surface of the second conductivity type semiconductor inwardly.
7 . The semiconductor light emitting device as claimed in claim 6 , wherein the second thickness of the second portion of the passivation layer is greater than the first thickness of the first portion of the passivation layer.
8 . The semiconductor light emitting device as claimed in claim 1 , wherein a perimeter of the lower surface of the electrode layer is spaced apart from a perimeter of an upper surface of the second conductivity type semiconductor outwardly.
9 . The semiconductor light emitting device as claimed in claim 1 , wherein:
the first conductivity type semiconductor has a first width,
the active layer has a second width greater than or equal to the first width, and
the second conductivity type semiconductor has a third width greater than or equal to the second width.
10 . The semiconductor light emitting device as claimed in claim 1 , wherein the side surface of the first conductivity type semiconductor is aligned with the side surface of each of the active layer and the second conductivity type semiconductor.
11 . The semiconductor light emitting device as claimed in claim 1 ,
wherein the electrode layer overlaps the second conductivity type semiconductor in a vertical direction, and
wherein the side surface of the electrode layer includes at least a portion that is not aligned with the side surface of the second conductivity type semiconductor.
12 . The semiconductor light emitting device as claimed in claim 11 , wherein the lower surface of the electrode layer has an area smaller than an area of an upper surface of the second conductivity type semiconductor.
13 . The semiconductor light emitting device as claimed in claim 12 , wherein the passivation layer covers the side surface of the second conductivity type semiconductor and at least a portion of an upper surface connected to the side surface of the second conductivity type semiconductor.
14 . The semiconductor light emitting device as claimed in claim 11 , wherein the lower surface of the electrode layer has an area larger than an area of an upper surface of the second conductivity type semiconductor.
15 . The semiconductor light emitting device as claimed in claim 14 , wherein the passivation layer covers the side surface of the electrode layer and at least a portion of the lower surface of the electrode layer connected to the side surface of the electrode layer.
16 . The semiconductor light emitting device as claimed in claim 1 ,
wherein a perimeter of the lower surface of the electrode layer is horizontally spaced apart from a perimeter of an upper surface of the second conductivity type semiconductor by a distance of about 30 nm to about 50 nm.
17 . The semiconductor light emitting device as claimed in claim 16 , wherein a maximum thickness of the passivation layer is about 30 nm or more and about 100 nm or less.
18 . The semiconductor light emitting device as claimed in claim 16 , wherein the semiconductor light emitting device has a substantially cylindrical structure.
19 . The semiconductor light emitting device as claimed in claim 16 , wherein a diameter of the semiconductor light emitting device is about 100 nm or more and about 1 μm or less.
20 . A semiconductor light emitting device, comprising:
a first conductivity type semiconductor;
an active layer on the first conductivity type semiconductor;
a second conductivity type semiconductor on the active layer;
an electrode layer on the second conductivity type semiconductor; and
a passivation layer covering a side surface of each of the first conductivity type semiconductor, the active layer, the second conductivity type semiconductor, and the electrode layer,
wherein an angle between a lower surface and the side surface of the electrode layer is about 45° or more and about 90° or less,
wherein the passivation layer comprises:
a first portion on the side surface of the first conductivity type semiconductor, the first portion having a first thickness, and
a second portion on the side surface of the electrode layer, the second portion having a second thickness less than the first thickness.