Semiconductor device and method of manufacture
In accordance with some embodiments, a source/drain contact is formed by exposing a source/drain region through a first dielectric layer and a second dielectric layer. The second dielectric layer is recessed under the first dielectric layer, and a silicide region is formed on the source/drain region, wherein the silicide region has an expanded width.
1 . A semiconductor device comprising:
a silicide region overlying a source/drain region of a semiconductor fin, the silicide region having a first width;
a contact in physical contact with the silicide region at an interface, the interface having a second width less than the first width;
a dielectric material adjacent to the contact, the dielectric material comprising an implantation region, the implantation region comprising a first dopant at a first concentration; and
a second implantation region within the source/drain region, the second implantation region comprising the first dopant, wherein the second implantation region has a second concentration of the first dopant less than the first concentration.
2 . The semiconductor device of claim 1 , wherein the first dopant is germanium.
3 . The semiconductor device of claim 2 , wherein the implantation region has a first concentration of germanium between about 3×10 20 ions/cm 2 and about 5×10 20 ions/cm 2 .
4 . The semiconductor device of claim 3 , wherein the implantation region has a width of between about 1 nm and about 3 nm.
5 . The semiconductor device of claim 1 , wherein a difference between the first width and the second width is between about 0.5 nm and about 3 nm.
6 . The semiconductor device of claim 1 , wherein the silicide region comprises titanium silicide.
7 . The semiconductor device of claim 6 , wherein the titanium silicide has a thickness of between about 3.9 nm and about 5.4 nm.
8 . A semiconductor device comprising:
a dielectric material over a source/drain region over a semiconductor fin; an implantation region located along a sidewall of the dielectric material over a silicide region, the silicide region being located between the implantation region and the source/drain region; and
a second implantation region within the source/drain region, the implantation region and the second implantation region comprising a first dopant, wherein the second implantation region has a concentration of the first dopant less than the implantation region.
9 . The semiconductor device of claim 8 , wherein the silicide region comprises titanium silicide.
10 . The semiconductor device of claim 9 , wherein the titanium silicide has a thickness of between about 3.9 nm and about 5.4 nm.
11 . The semiconductor device of claim 8 , wherein the first dopant comprises germanium.
12 . The semiconductor device of claim 8 , wherein the implantation region has a concentration of germanium of between about 3×10 20 ions/cm 2 and about 5×10 20 ions/cm 2 .
13 . The semiconductor device of claim 8 , wherein the silicide region extends under the dielectric material a distance of between about 0.5 nm and about 3 nm.
14 . The semiconductor device of claim 8 , wherein the implantation region has a width of between about 1 nm and about 3 nm.
15 . A semiconductor device comprising:
a contact extending through a dielectric material, wherein the contact is adjacent to a first implantation region of the dielectric material;
a silicide region in physical contact with the contact, the silicide region having a larger width than the contact;
a source/drain region in physical contact with the silicide region; and
a second implantation region within the source/drain region, the first implantation region and the second implantation region comprising a first dopant, wherein the second implantation region has a second concentration of the first dopant less than the first implantation region.
16 . The semiconductor device of claim 15 , wherein the silicide region comprises titanium silicide.
17 . The semiconductor device of claim 16 , wherein the titanium silicide has a thickness of between about 3.8 nm and about 6.7 nm.
18 . The semiconductor device of claim 17 , wherein the titanium silicide has a thickness of between about 3.8 nm and about 5.3 nm.
19 . The semiconductor device of claim 15 , wherein a concentration of dopants within the first implantation region is between about 3×10 20 ions/cm 2 and about 5×10 20 ions/cm 2 .
20 . The semiconductor device of claim 15 , wherein the first implantation region has a width of between about 1 nm and about 3 nm.