Photoelectric conversion apparatus, photoelectric conversion system, and moving object
An avalanche photodiode has a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the first semiconductor region being a region where charges having the same polarity as that of signal charges are treated as majority carriers. A separator provided between a first photoelectric conversion element and a second photoelectric conversion element has a trench structure. A top surface of the trench structure is positioned between a top surface of the second semiconductor region and a bottom surface of the second semiconductor region.
1 . A photoelectric conversion apparatus comprising:
a semiconductor layer including a plurality of photoelectric conversion elements and having a first surface and a second surface, which is a surface on an opposite side to the first surface and on which light is incident, wherein
each of the plurality of photoelectric conversion elements includes an avalanche photodiode,
the avalanche photodiode has a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the first semiconductor region being a region where charges having the same polarity as that of signal charges are treated as majority carriers,
the plurality of photoelectric conversion elements are separated from each other by a respective separators including a third semiconductor region of the second conductivity type,
the second semiconductor region is arranged so as to be in contact with the third semiconductor region,
the plurality of photoelectric conversion elements include a first photoelectric conversion element and a second photoelectric conversion element, which are aligned in a first direction,
a separator provided between the first photoelectric conversion element and the second photoelectric conversion element has a trench structure extending from a side where the second surface side is provided toward a side where the first surface is provided,
the trench structure is arranged such that a top surface of the trench structure is positioned between a top surface of the second semiconductor region and a bottom surface of the second semiconductor region, and
the third semiconductor region is arranged between the first photoelectric conversion element and the second photoelectric conversion element such that a top surface of the third semiconductor region is positioned between the first surface of the semiconductor layer and the top surface of the second semiconductor region.
2 . The photoelectric conversion apparatus according to claim 1 ,
wherein the plurality of photoelectric conversion elements include the first photoelectric conversion element and a third photoelectric conversion element, which are aligned in a second direction crossing the first direction.
3 . The photoelectric conversion apparatus according to claim 2 , wherein
a separator provided between the first photoelectric conversion element and the third photoelectric conversion element has the trench structure, and
the trench structure is provided between the first photoelectric conversion element and the third photoelectric conversion element such that the top surface of the trench structure is arranged at a position between the top surface of the second semiconductor region and the bottom surface of the second semiconductor region.
4 . The photoelectric conversion apparatus according to claim 2 ,
wherein a separator provided between the first photoelectric conversion element and the third photoelectric conversion element does not have a trench structure.
5 . The photoelectric conversion apparatus according to claim 2 ,
wherein the first direction is a side facing direction, and the second direction is a diagonal direction.
6 . The photoelectric conversion apparatus according to claim 2 ,
wherein between the first photoelectric conversion element and the third photoelectric conversion element, a contact plug is connected to the first surface.
7 . The photoelectric conversion apparatus according to claim 6 ,
wherein a voltage is applied to the second semiconductor region through the contact plug and the third semiconductor region.
8 . The photoelectric conversion apparatus according to claim 1 , wherein
a fourth semiconductor region of the first conductivity type is continuously arranged between the first semiconductor region of the first photoelectric conversion element and the first semiconductor region of the second photoelectric conversion element,
an impurity concentration of the fourth semiconductor region is lower than an impurity concentration of the first semiconductor region, and
the fourth semiconductor region forms part of the first surface.
9 . The photoelectric conversion apparatus according to claim 8 ,
wherein the fourth semiconductor region has a first portion having a first impurity concentration and a second portion having an impurity concentration lower than the first portion, the second portion being farther from the first semiconductor region than the first portion is.
10 . The photoelectric conversion apparatus according to claim 1 , wherein
a fifth semiconductor region of the second conductivity type is arranged on a side where the second surface of the semiconductor layer is provided with respect to the second semiconductor region, and
a sixth semiconductor region of the first conductivity type is provided between the second semiconductor region and the fifth semiconductor region.
11 . The photoelectric conversion apparatus according to claim 10 ,
wherein an impurity concentration of the sixth semiconductor region is lower than an impurity concentration of the first semiconductor region.
12 . The photoelectric conversion apparatus according to claim 1 ,
wherein the third semiconductor region arranged between the first photoelectric conversion element and the second photoelectric conversion element forms part of the first surface of the semiconductor layer.
13 . The photoelectric conversion apparatus according to claim 1 ,
wherein an oxide film is arranged in the trench structure.
14 . The photoelectric conversion apparatus according to claim 1 , wherein
oxide films and at least one out of air and metal are arranged in the trench structure, and
the at least one out of air and metal is arranged so as to be held between the oxide films.
15 . A photoelectric conversion system comprising:
the photoelectric conversion apparatus according to claim 1 ; and
a signal processing unit configured to generate an image using a signal output by the photoelectric conversion apparatus.
16 . A moving object including the photoelectric conversion apparatus according to claim 1 , the moving object comprising:
a controller configured to control movement of the moving object using a signal output by the photoelectric conversion apparatus.
17 . A photoelectric conversion apparatus comprising:
a semiconductor layer including a plurality of photoelectric conversion elements and having a first surface and a second surface, which is a surface on an opposite side to the first surface and on which light is incident, wherein
each of the plurality of photoelectric conversion elements includes an avalanche photodiode,
the avalanche photodiode has a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the first semiconductor region being a region where charges having the same polarity as that of signal charges are treated as majority carriers,
the plurality of photoelectric conversion elements are separated from each other by a respective separators including a third semiconductor region of the second conductivity type,
the second semiconductor region is arranged so as to be in contact with the third semiconductor region,
the plurality of photoelectric conversion elements include a first photoelectric conversion element and a second photoelectric conversion element, which are aligned in a first direction,
a separator provided between the first photoelectric conversion element and the second photoelectric conversion element has a trench structure extending from a side where the second surface side is provided toward a side where the first surface is provided,
the trench structure is arranged such that a top surface of the trench structure is positioned between a top surface of the second semiconductor region and a bottom surface of the second semiconductor region,
a fourth semiconductor region of the first conductivity type is continuously arranged between the first semiconductor region of the first photoelectric conversion element and the first semiconductor region of the second photoelectric conversion element,
an impurity concentration of the fourth semiconductor region is lower than an impurity concentration of the first semiconductor region, and
the fourth semiconductor region forms part of the first surface.
18 . A photoelectric conversion apparatus comprising:
a semiconductor layer including a plurality of photoelectric conversion elements and having a first surface and a second surface, which is a surface on an opposite side to the first surface and on which light is incident, wherein
each of the plurality of photoelectric conversion elements includes an avalanche photodiode,
the avalanche photodiode has a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the first semiconductor region being a region where charges having the same polarity as that of signal charges are treated as majority carriers,
the plurality of photoelectric conversion elements are separated from each other by a respective separators including a third semiconductor region of the second conductivity type,
the second semiconductor region is arranged so as to be in contact with the third semiconductor region,
the plurality of photoelectric conversion elements include a first photoelectric conversion element and a second photoelectric conversion element, which are aligned in a first direction,
a separator provided between the first photoelectric conversion element and the second photoelectric conversion element has a trench structure extending from a side where the second surface side is provided toward a side where the first surface is provided,
the trench structure is arranged such that a top surface of the trench structure is positioned between a top surface of the second semiconductor region and a bottom surface of the second semiconductor region,
a fifth semiconductor region of the second conductivity type is arranged on a side where the second surface of the semiconductor layer is provided with respect to the second semiconductor region, and
a sixth semiconductor region of the first conductivity type is provided between the second semiconductor region and the fifth semiconductor region.