Treatment liquid for semiconductors and method for producing same
A treatment liquid for a semiconductor containing a group 6 metal, the treatment liquid containing hypobromite ions. Also provided is a treatment liquid for a semiconductor containing a group 6 metal, the treatment liquid characterized by being formed by adding and mixing at least a bromine-containing compound, an oxidizing agent, a base compound, and water, wherein relative to a total mass, an added amount of the bromine-containing compound is 0.008 mass % or more and less than 10 mass % as an amount of bromine element, and an added amount of the oxidizing agent is 0.1 mass ppm or more and 20 mass % or less; and pH at 25° C. is 8 or higher and 14 or lower. Further provided is a method for producing the treatment liquid for a semiconductor.
1 . A treatment liquid for a semiconductor of a group 6 metal, the treatment liquid comprising hypobromite ions and chloride ions, and a ratio of the hypobromite ions to the chloride ions is 0.05 or more and 0.5 or less.
2 . The treatment liquid for a semiconductor according to claim 1 , wherein the group 6 metal is at least one type of metal selected from the group consisting of tungsten, molybdenum, and chromium.
3 . The treatment liquid for a semiconductor according to claim 1 , wherein the hypobromite ions are 0.001 mol/L or more and 1.2 mol/L or less.
4 . The treatment liquid for a semiconductor according to claim 1 , wherein pH of the treatment liquid for a semiconductor is 8 or higher and 14 or lower at 25° C.
5 . The treatment liquid for a semiconductor according to claim 1 , further comprising a tetraalkylammonium ion.
6 . The treatment liquid for a semiconductor according to claim 1 , wherein the treatment liquid for a semiconductor further comprises an oxidizing agent, and an oxidation-reduction potential of the oxidizing agent exceeds an oxidation-reduction potential of a hypobromite ion/Br − system.
7 . The treatment liquid for a semiconductor according to claim 6 , wherein the oxidizing agent contained in the treatment liquid for a semiconductor is hypochlorite ions, periodic acid, or ozone.
8 . A method for producing the treatment liquid for a semiconductor according to claim 1 , the method comprising mixing a solution containing a base compound with hypobromous acid, a hypobromite salt, bromine water, or bromine gas.
9 . A method for producing the treatment liquid for a semiconductor according to claim 1 , the method comprising mixing a solution containing a hypochlorous acid compound and a base compound with a bromine-containing compound.
10 . A treatment liquid for a semiconductor containing a group 6 metal, the treatment liquid containing at least a bromine-containing compound, an oxidizing agent, a base compound, and water, wherein,
relative to a total mass, an added amount of the bromine-containing compound is 0.008 mass % or more and less than 10 mass % in terms of bromine element, and an added amount of the oxidizing agent is 0.1 mass ppm or more and 20 mass % or less;
pH at 25° C. is 8 or higher and 14 or lower; and
the treatment liquid for a semiconductor further comprises hypobromite ions and chloride ions, and a ratio of the hypobromite ions to the chloride ions is 0.05 or more and 0.5 or less.
11 . The treatment liquid for a semiconductor according to claim 10 , wherein the oxidizing agent is a hypochlorous acid compound or ozone.
12 . The treatment liquid for a semiconductor according to claim 10 , wherein the bromine-containing compound is a bromine salt or hydrogen bromide.
13 . The treatment liquid for a semiconductor according to claim 12 , wherein the bromine salt is a tetraalkylammonium bromide.
14 . The treatment liquid for a semiconductor according to claim 10 , wherein the base compound is tetramethylammonium hydroxide.
15 . The treatment liquid for a semiconductor according to claim 10 , wherein pH of the treatment liquid at 25° C. is 8 or higher and 13 or lower.
16 . A method for producing the treatment liquid for a semiconductor according to claim 10 , the method comprising mixing a solution containing the oxidizing agent and the base compound with the bromine-containing compound.
17 . A method for treating a substrate, the method comprising: preparing a treatment liquid for a semiconductor by the production method according to claim 16 ; and then etching a film containing a group 6 metal deposited on a substrate by the treatment liquid for a semiconductor.