Power module
A power module ( 10 ) includes a power semiconductor chip ( 1 ) and a Cu circuit ( 3 ) having the power semiconductor chip ( 1 ) provided on one surface. The power module ( 10 ) includes: a sintering layer ( 2 ) joining the power semiconductor chip ( 1 ) and the Cu circuit ( 3 ) by using a sintering paste; and a heat dissipation sheet ( 4 ) provided for joining a Cu base plate ( 5 ) to the other surface of the Cu circuit ( 3 ), in which in a first laminated structure in which the power semiconductor chip ( 1 ), the sintering layer ( 2 ), the Cu circuit ( 3 ), and the heat dissipation sheet ( 4 ) are laminated, the total thermal resistance XA in the direction of lamination is equal to or less than 0.30 (K/W).
1 . A power module comprising:
a power semiconductor element; and
a first heat dissipation structure having the power semiconductor element provided on one surface side,
wherein the first heat dissipation structure includes
a first metal circuit board,
a first joining layer provided for joining the power semiconductor element to one surface of the first metal circuit board by using a sintering paste, and
a first heat dissipation sheet provided for joining a first heat dissipation member to the other surface of the first metal circuit board, and
wherein in a laminated structure A in which the power semiconductor element, the first joining layer, the first metal circuit board, and the first heat dissipation sheet are laminated, a total thermal resistance in a direction of lamination is equal to or less than 0.30 (K/W),
wherein the first heat dissipation sheet is formed by using a resin composition for a sheet, and
wherein the resin composition for the sheet includes a thermosetting resin (A), a filler (B) and a curing agent (C).
2 . The power module according to claim 1 ,
wherein the first heat dissipation structure further includes the first heat dissipation member joined to the other surface of the first metal circuit board by using the first heat dissipation sheet.
3 . The power module according to claim 2 ,
wherein in a laminated structure B in which the power semiconductor element, the first joining layer, the first metal circuit board, the first heat dissipation sheet, and the first heat dissipation member are laminated, a total thermal resistance in a direction of lamination (height direction) is equal to or less than 0.45 (K/W).
4 . The power module according to claim 1 ,
wherein when the total thermal resistance in the direction of lamination of the laminated structure A is designated as XA (K/W) and a total thickness of the laminated structure A is designated as tA (mm), a ratio XA/tA is equal to or less than 0.25 (K/W·(mm)).
5 . The power module according to claim 3 ,
wherein when the total thermal resistance in the direction of lamination of the laminated structure B is designated as XB (K/W) and a total thickness of the laminated structure B is designated as tB (mm), a ratio XB/tB is equal to or less than 0.08 (K/W·(mm)).
6 . The power module according to claim 1 , further comprising:
a second heat dissipation structure provided on the other surface side of the power semiconductor element; and
a spacer provided between the power semiconductor element and the second heat dissipation structure,
wherein the second heat dissipation structure includes
a second metal circuit board, and
a second joining layer provided for joining the spacer to one surface of the second metal circuit board by using a sintering paste,
and also includes
a third joining layer for joining the power semiconductor element and the spacer by using a sintering paste, and
a sealing material layer in which in a region between the first heat dissipation structure and the second heat dissipation structure, a region where the power semiconductor element, the spacer, and the first to third joining layers are not provided is sealed with a mold sealing material.
7 . The power module according to claim 6 ,
wherein the second heat dissipation structure further includes a second heat dissipation sheet provided for joining a second heat dissipation member to the other surface of the second metal circuit board.
8 . The power module according to claim 7 ,
wherein the second heat dissipation structure further includes the second heat dissipation member joined to the other surface of the second metal circuit board by using the second heat dissipation sheet.
9 . The power module according to claim 6 ,
wherein a ratio R 1 /R 2 between a first thermal resistance R 1 in the direction of lamination from a center in a thickness direction of the spacer to the first heat dissipation structure, and a second thermal resistance R 2 in the direction of lamination from the center in the thickness direction of the spacer to the second heat dissipation structure, is equal to or more than 0.7 and equal to or less than 1.3.
10 . The power module according to claim 9 ,
wherein the first thermal resistance R 1 and the second thermal resistance R 2 are equal to or more than 0.05 (K/W) and equal to or less than 0.5 (K/W).
11 . The power module according to claim 1 ,
wherein metal particles contained in the sintering paste are any of silver particles, aluminum particles, or copper particles.
12 . The power module according to claim 1 ,
further comprising a sealing material covering the power semiconductor element.
13 . The power module according to claim 12 ,
wherein the sealing material is formed of a molding resin.
14 . The power module according to claim 12 ,
wherein the sealing material covers and seals the power semiconductor element so as to cover a portion or the entirety of side surfaces in the thickness direction of the first heat dissipation member and/or the second heat dissipation member.
15 . The power module according to claim 1 ,
wherein the first metal circuit board and/or the second metal circuit board is a circuit board obtained by patterning thick copper (rolled copper) and has a thickness of equal to or more than 0.3 mm and equal to or less than 5 mm.