Method of manufacturing a semiconductor device and a semiconductor device
In a method of manufacturing a semiconductor device, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately stacked, is formed. A sacrificial gate structure is formed over the fin structure. A source/drain region of the fin structure, which is not covered by the sacrificial gate structure, is etched, thereby forming a source/drain space. The first semiconductor layers are laterally etched through the source/drain space. An inner spacer made of a dielectric material is formed on an end of each of the etched first semiconductor layers. A source/drain epitaxial layer is formed in the source/drain space to cover the inner spacer. A lateral end of each of the first semiconductor layers has a V-shape cross section after the first semiconductor layers are laterally etched.
1 . A semiconductor device, comprising:
semiconductor wires disposed over a substrate each having a channel region;
a source/drain epitaxial layer in contact with the semiconductor wires;
a gate dielectric layer disposed on and wrapping around the channel region of each of the semiconductor wires;
a gate electrode layer disposed on the gate dielectric layer;
a gate sidewall spacer disposed on a side face of the gate electrode layer; and
insulating spacers each disposed between the gate dielectric layer and the source/drain epitaxial layer, wherein:
an additional insulating spacer made of a same material as the insulating spacers is disposed above an uppermost one of the semiconductor wires,
the additional insulating spacer is separated from the gate electrode layer by the gate dielectric layer, and
an entirely of the additional insulating spacer is located below the gate sidewall spacer.
2 . The semiconductor device of claim 1 , wherein each of the insulating spacers and the additional insulating spacer includes two layers.
3 . The semiconductor device of claim 2 , wherein the two layers are a first layer and a second layer formed on the first layer, and the first layer has a smaller thickness than the second layer.
4 . The semiconductor device of claim 2 , wherein the insulating spacers and the additional insulating spacer include at least one of SiOC, SiOCN and SiCN.
5 . The semiconductor device of claim 3 , wherein the first layer of the insulating spacers is in contact with the gate dielectric layer.
6 . The semiconductor device of claim 5 , wherein the gate sidewall spacer is made of a different material than the insulating spacers and the additional insulating spacer.
7 . The semiconductor device of claim 1 , wherein an interface between the gate dielectric layer and each of the insulating spacers is curved and convex toward the gate dielectric layer.
8 . The semiconductor device of claim 1 , wherein the semiconductor wires are made of SiGe.
9 . A semiconductor device, comprising:
semiconductor wires disposed over a substrate;
a source/drain epitaxial layer in contact with the semiconductor wires;
a gate dielectric layer disposed on and wrapping around each channel region of the semiconductor wires;
a gate electrode layer disposed on the gate dielectric layer and wrapping around each channel region;
a gate sidewall spacer disposed on a side face of the gate electrode layer; and
insulating spacers each enclosed by adjacent semiconductor wires, the gate dielectric layer and the source/drain epitaxial layer, wherein:
each of the insulating spacers includes two layers having a first layer and a second layer formed on the first layer, and
the first layer includes silicon germanium oxide.
10 . The semiconductor device of claim 9 , wherein the second layer of the insulating spacers includes at least one of SiOC, SiOCN and SiCN.
11 . The semiconductor device of claim 9 , wherein the first layer is in contact with the gate dielectric layer.
12 . The semiconductor device of claim 9 , wherein an interface between the gate dielectric layer and the first layer of the insulating spacers is convex toward the gate dielectric layer.
13 . The semiconductor device of claim 12 , wherein each of the insulating spacers has a triangular cross section.
14 . The semiconductor device of claim 12 , wherein each of the insulating spacers has a semi-circular cross section.
15 . The semiconductor device of claim 9 , wherein a bottom of the source/drain epitaxial layer partially penetrates into a bottom fin structure.
16 . A semiconductor device, comprising:
semiconductor wires disposed over a bottom fin structure disposed over a substrate;
a source/drain epitaxial layer in contact with the semiconductor wires;
a gate dielectric layer disposed on and wrapping around each channel region of the semiconductor wires;
a gate electrode layer disposed on the gate dielectric layer and wrapping around each channel region;
a gate sidewall spacer disposed on a side face of the gate electrode layer; and
insulating spacers each enclosed by adjacent semiconductor wires, the gate dielectric layer and the source/drain epitaxial layer,
wherein each of the insulating spacers includes a layer made of germanium oxide.
17 . The semiconductor device of claim 16 , wherein an interface between the gate dielectric layer and a first layer of the insulating spacers is convex toward the gate dielectric layer.
18 . The semiconductor device of claim 16 , wherein the source/drain epitaxial layer is in contact with ends of the semiconductor wires.
19 . The semiconductor device of claim 16 , wherein a source/drain epitaxial layer wraps around a source/drain region of each of the semiconductor wires.
20 . The semiconductor device of claim 13 , wherein each of the insulating spacers includes two layers.