IP Library › Granted Patent US 12,543,412
Granted Patent B2
US 12,543,412 · App. 18/224,319 · Granted Feb 3, 2026

Semiconductor light emitting device for display pixel and display device including the same

Inventors: Wonjae Chang (Seoul, KR); Sunghyun Hwang (Seoul, KR); Chunghyun Lim (Seoul, KR); Minwoo Lee (Seoul, KR); Myoungsoo Kim (Seoul, KR)
Assignee: LG ELECTRONICS INC.
H10H20/831H10H20/84H01L2224/95144H10H29/012H10H29/03
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Quick Facts
Patent No.
US 12,543,412
App. No.
18/224,319
Granted
Feb 3, 2026
Kind
B2
Abstract

Embodiment relates to a semiconductor light emitting device for a display pixel and a display device including the same. A semiconductor light emitting device for a display pixel according to an embodiment includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, the first conductivity type semiconductor layer in the semiconductor light emitting device for a display pixel, a first contact electrode electrically connected to, a metal layer disposed under the first conductivity-type semiconductor layer, a second contact electrode disposed on the second conductivity-type semiconductor layer, and a passivation disposed on the light emitting structure may contain layers. The metal layer may include a magnetic material, and a weight ratio of the magnetic material to the weight of the semiconductor light emitting device may be 0.25% to 36.75%.

Claims (41)

1 . A semiconductor light emitting device for display pixels, comprising:

a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;

a first contact electrode electrically connected to the first conductivity type semiconductor layer;

a metal layer disposed under the first conductivity-type semiconductor layer;

a second contact electrode disposed on the second conductivity type semiconductor layer; and

a passivation layer disposed on the light emitting structure,

wherein the metal layer includes a magnetic material, and

wherein a weight ratio of the magnetic material to the weight of the semiconductor light emitting device is 0.25% to 36.75%.

2 . The semiconductor light emitting device according to claim 1 , wherein the magnetic material comprises Ni.

3 . A display device, comprising:

a first assembly electrode and a second assembly electrode spaced apart from each other;

a dielectric layer disposed on the first and second assembly electrodes;

an insulating layer having an assembly hole and disposed on the dielectric layer; and

a semiconductor light emitting device disposed on the assembly hole;

wherein the semiconductor light emitting device is the semiconductor light emitting device according to claim 2 .

4 . The semiconductor light emitting device according to claim 1 , wherein a thickness of the magnetic material is 10 nm to 2300 nm.

5 . A display device, comprising:

a first assembly electrode and a second assembly electrode spaced apart from each other;

a dielectric layer disposed on the first and second assembly electrodes;

an insulating layer having an assembly hole and disposed on the dielectric layer; and

a semiconductor light emitting device disposed on the assembly hole;

wherein the semiconductor light emitting device is the semiconductor light emitting device according to claim 3 .

6 . The semiconductor light emitting device according to claim 1 , wherein the first contact electrode is disposed while surrounding a circumference of the second contact electrode, and

wherein an upper side of the light emitting structure is electrically connected to the first conductivity type semiconductor layer partially removed thereof.

7 . A display device, comprising:

a first assembly electrode and a second assembly electrode spaced apart from each other;

a dielectric layer disposed on the first and second assembly electrodes;

an insulating layer having an assembly hole and disposed on the dielectric layer; and

a semiconductor light emitting device disposed on the assembly hole;

wherein the semiconductor light emitting device is the semiconductor light emitting device according to claim 4 .

8 . A display device, comprising:

a first assembly electrode and a second assembly electrode spaced apart from each other;

a dielectric layer disposed on the first and second assembly electrodes;

an insulating layer having an assembly hole and disposed on the dielectric layer; and

a semiconductor light emitting device disposed on the assembly hole;

wherein the semiconductor light emitting device is the semiconductor light emitting device according to claim 1 .

9 . The display device according to claim 8 , wherein a height of the assembly hole is 4.0 μm or more.

10 . The display device according to claim 9 , wherein the height of the assembly hole is 4.5 μm to 5.0 μm.

11 . The display device according to claim 8 , wherein the dielectric layer comprises a nitride.

12 . The display device according to claim 11 , wherein the dielectric layer comprises Si 3 N 4 .

13 . The display device according to claim 8 , wherein a gap ratio, which is a ratio of a distance ratio between the spaced first and second assembly electrodes to a size of the semiconductor light emitting element, is 0.4 to 0.8.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 20, 2023
From: CHANG, WONJAE; HWANG, SUNGHYUN; LIM, CHUNGHYUN; LEE, MINWOO; KIM, MYOUNGSOO
To: LG ELECTRONICS INC.
Reel/Frame 064329/0396 →
Priority Claims (2)
KR 10-2022-0090286 · Jul 21, 2022 · national
KR 10-2023-0008185 · Jan 19, 2023 · national
Continuity (1)
Related Publication 20240030182A1 · Jan 25, 2024
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