Control device, control method, and program
A control device configured to control a supply condition of a gas which is supplied between two substrates that are to be bonded to each other by a substrate bonding device, is configured to control the supply condition based on a measurement result obtained by a measurement in relation to at least one of the substrate, another substrate bonded before the substrate is bonded, or the substrate bonding device, and the two substrates are bonded to each other by a contact region expanding after the contact region is formed in a center.
1 . A control device configured to control a supply condition of a gas which is supplied toward a space between two substrates that are to be bonded to each other by a substrate bonding device,
the two substrates being bonded to each other by expanding a contact region formed in a center portion of the two substrates, and
the control device being configured to control the supply condition based on a measurement result obtained by a measurement in relation to at least one of an aspect of a thickness of an outer peripheral portion of each of the two substrates, an aspect of a warp in the outer peripheral portion of each of the two substrates, an aspect of a bonding wave that is generated between the two substrates during a step of bonding the two substrates, an aspect of a void generated in an outer peripheral portion of two bonded substrates different from the two substrates, or an aspect of bonding between two bonded substrates different from the two substrates.
2 . The control device according to claim 1 , wherein
the supply condition is at least any of a supply flow rate of the gas to the space between the two substrates, a supply pressure of the gas, a supply time of the gas, a supply direction of the gas, a humidity of the gas, a temperature of the gas, or a discharge flow rate from the space between the two substrates of the gas.
3 . The control device according to claim 1 ,
the control device being configured to supply the gas, at at least any of a relatively high supply flow rate, a relatively high supply pressure, or a relatively high temperature, to at least any location of a location where the thickness is relatively small, or a location where an amount of warp of the warp is relatively large, in the outer peripheral portion of the two substrates.
4 . The control device according to claim 1 ,
the control device being configured to supply the gas toward at least any location of a location where the thickness is relatively small, or a location where an amount of warp of the warp is relatively large, in the outer peripheral portion of the two substrates.
5 . The control device according to claim 1 ,
the control device being configured to supply the gas, at at least any of a relatively high supply flow rate, a relatively high supply pressure, or a relatively high temperature, to a location where a progression of the bonding wave is relatively fast, in an outer peripheral side of the two substrates during the step of bonding the two substrates.
6 . The control device according to claim 1 ,
the control device being configured to supply the gas toward a location where a progression of the bonding wave is relatively fast, in an outer peripheral side of the two substrates during the step of bonding the two substrates.
7 . The control device according to claim 1 ,
the control device being configured to cause the gas to be supplied, at at least any of a relatively high supply flow rate, a relatively high supply pressure, or a relatively high temperature, to a substrate holding position in the substrate bonding device corresponding to at least any location of a location where a relatively large number of voids are generated, or a location where the bonding is released and peeling occurs, in the outer peripheral portion of the two bonded substrates.
8 . The control device according to claim 1 ,
the control device being configured to cause the gas to be supplied, toward a substrate holding position in the substrate bonding device corresponding to at least any location of a location where a relatively large number of voids are generated, or a location where the bonding is released and peeling occurs, in the outer peripheral portion of the two bonded substrates.
9 . The control device according to claim 1 ,
the control device being configured to supply the gas to the space between the two substrates before a contact between the two substrates.
10 . A substrate bonding device comprising the control device according to claim 1 .
11 . A control device configured to control a supply condition of a gas which is supplied between two substrates that are to be bonded to each other by a substrate bonding device,
the two substrates being bonded to each other by expanding a contact region formed in a center portion of the two substrates, and the control device being configured to control the supply condition based on a measurement result obtained by a measurement in relation to at least one of the two substrates, two other substrates bonded before the two substrates are bonded, or the substrate bonding device,
the measurement result includes at least any of an interval between the two substrates during a bonding step, or relative positions of two holding portions holding the two substrates during the bonding step,
the control device being configured to:
supply the gas at least to a center between the two substrates in a plane direction, in at least any case of a case where the interval is larger than or equal to a predetermined size, or a case where the relative positions are away from each other by the predetermined size or more; and
supply the gas to surroundings of the two substrates, in at least any case of a case where the interval is smaller than the predetermined size, or a case where the relative positions are close to each other less than the predetermined size.
12 . The control device according to claim 11 ,
the control device being configured to supply the gas from an upstream side of flowing of air which flows in one direction from sides of the two substrates toward the two substrates, in at least any case of the case where the interval is larger than or equal to the predetermined size, or the case where the relative positions are away from each other by the predetermined size or more.
13 . The control device according to claim 11 ,
the control device being configured to supply the gas toward entire peripheries of the two substrates from at least any direction from above the two substrates, a direction from below the two substrates, or a direction from sides of the two substrates, in at least any case of the case where the interval is smaller than the predetermined size, or the case where the relative positions are close to each other less than the predetermined size.
14 . A control device configured to control a supply condition of a gas which is supplied between two substrates that are to be bonded to each other by a substrate bonding device,
the two substrates being bonded to each other by expanding a contact region formed in a center portion of the two substrates, and the control device being configured to control the supply condition based on a measurement result obtained by a measurement in relation to at least one of the two substrates, two other substrates bonded before the two substrates are bonded, or the substrate bonding device,
the control device being further configured to control two holding portions holding the two substrates that are to be bonded to each other, cause the two substrates, which are to be bonded to each other, to face each other, and then widen an interval between the two substrates held by the two holding portions before an atmosphere, which exists between the two substrates that are to be bonded to each other, is replaced with the gas.
15 . A control device configured to control a supply condition of a gas which is supplied between two substrates that are to be bonded to each other by a substrate bonding device,
the two substrates being bonded to each other by expanding a contact region formed in a center portion of the two substrates, and
the control device being configured to switch the supply condition in response to a change of an interval between the two substrates.
16 . The control device according to claim 15 ,
the control device being configured to supply the gas to a space between the two substrates before a contact between the two substrates.
17 . A control method for controlling a supply condition of a gas which is supplied toward a space between two substrates that are to be bonded to each other by a substrate bonding device,
the two substrates being bonded to each other by expanding a contact region formed in a center portion of the two substrates, and
the control method comprising: controlling the supply condition based on a measurement result obtained by a measurement in relation to at least one of an aspect of a thickness of an outer peripheral portion of each of the two substrates, an aspect of a warp in the outer peripheral portion of each of the two substrates, an aspect of a bonding wave that is generated between the two substrates during a bonding step, an aspect of a void generated in an outer peripheral portion of two other substrates bonded before the two substrates are bonded, or an aspect of bonding between the two other substrates.
18 . A computer-readable medium having recorded thereon a program that, when executed by a computer, causes the computer to perform the control method according to claim 17 .