Light emitting device having a stacked structure
A light emitting device including a first light emitting part, a second light emitting part disposed on a first surface of the first light emitting part, and a third light emitting part disposed on a first surface of the second light emitting part, a first contact member contacting a surface of a second n-type semiconductor layer of the second light emitting part, an ohmic electrode electrically connected to a third p-type semiconductor layer of the third light emitting part, and an adhesive layer disposed between the second light emitting part and the third light emitting part, in which the first contact member extends toward the first light emitting part to be electrically connected to a first n-type semiconductor layer of the first light emitting part, and the adhesive layer extends toward the ohmic electrode.
1 . A light emitting device comprising:
a light emitter including a plurality of semiconductor layers and configured to emit light;
a first electrode electrically connected to one of the plurality of semiconductor layers;
a second electrode electrically connected to one of the plurality of semiconductor layers;
a first adhesion layer disposed on a side of the light emitter; and
a second adhesion layer disposed on an opposite side of the light emitter,
wherein:
the light emitter is disposed between the first adhesion layer and the second adhesion layer;
the second electrode includes a first electrode region and a second electrode region connected to each other;
the first adhesion layer surrounds a side surface of the first electrode region; and
a width of the first electrode decreases in a downward direction and a width of the second electrode increases in the downward direction in a cross sectional view.
2 . The light emitting device of claim 1 , wherein the light emitter further includes a substrate, a first pad, and a second pad,
wherein the substrate has a quadrangular shape in a plan view, and
wherein the first pad is disposed on a first corner of the substrate and the second pad is disposed on a second corner of the substrate.
3 . The light emitting device of claim 2 , wherein the light emitter includes a hole formed partially through the plurality of semiconductor layers.
4 . The light emitting device of claim 3 , wherein a width of the hole increases in the downward direction.
5 . The light emitting device of claim 4 , wherein the first adhesion layer is disposed on the hole.
6 . The light emitting device of claim 1 , wherein a bottom surface of the second electrode is disposed at a level lower than the plurality of semiconductor layers.
7 . The light emitting device of claim 1 , wherein the second adhesion layer is silicon oxide or silicon nitride.
8 . A light emitting device comprising:
a light emitter including a plurality of semiconductor layers and configured to emit light;
a first electrode electrically connected to one of the plurality of semiconductor layers;
a second electrode electrically connected to one of the plurality of semiconductor layers;
a first transmittance layer disposed on a side of the light emitter; and
a second transmittance layer disposed on an opposite side of the light emitter,
wherein:
the second electrode includes a first electrode region and a second electrode region connected to each other;
the first transmittance layer covers a side surface of the first electrode region;
the second transmittance layer is closer to the first electrode region than the second electrode region; and
a width of the first electrode decreases in a downward direction and a width of the second electrode increases in the downward direction in a cross sectional view.
9 . The light emitting device of claim 8 , wherein the light emitter further includes a substrate, a first pad, and a second pad,
wherein the substrate has a quadrangular shape in a plan view, and
wherein the first pad is disposed on a first corner of the substrate and the second pad is disposed on a second corner of the substrate.
10 . The light emitting device of claim 9 , wherein the light emitter includes a hole formed partially through the plurality of semiconductor layers.
11 . The light emitting device of claim 10 , wherein a width of the hole increases in the downward direction.
12 . The light emitting device of claim 11 , wherein the first transmittance layer is disposed on the hole.
13 . The light emitting device of claim 8 , wherein a bottom surface of the second electrode is disposed at a level lower than the plurality of semiconductor layers.
14 . The light emitting device of claim 8 , wherein the second transmittance layer is silicon oxide or silicon nitride.
15 . A light emitting device comprising:
a light emitter including a plurality of semiconductor layers and configured to emit light;
a first electrode electrically connected to one of the plurality of semiconductor layers;
a second electrode electrically connected to one of the plurality of semiconductor layers;
a first layer disposed on a side of the light emitter; and
a second layer disposed on an opposite side of the light emitter,
wherein:
the second electrode includes a first electrode region and a second electrode region electrically connected to each other;
the first layer covers a side surface of the first electrode region;
the second layer is closer to the first electrode region than the second electrode region; and
a width of the first electrode decreases in a downward direction and a width of the second electrode increases in the downward direction in a cross sectional view.
16 . The light emitting device of claim 15 , wherein the light emitter further includes a substrate, a first pad, and a second pad,
wherein the substrate has a quadrangular shape in a plan view, and
wherein the first pad is disposed on a first corner of the substrate and the second pad is disposed on a second corner of the substrate.
17 . The light emitting device of claim 16 , wherein the light emitter includes a hole formed partially through the plurality of semiconductor layers.
18 . The light emitting device of claim 17 , wherein a width of the hole increases in the downward direction.
19 . The light emitting device of claim 17 , wherein the first layer is disposed on the hole.
20 . The light emitting device of claim 15 , wherein a bottom surface of the second electrode is disposed at a level lower than the plurality of semiconductor layers.