Semiconductor device with top wiring covered by multiple passivation films to prevent cracking and method of manufacturing the same
A semiconductor device includes: a semiconductor substrate having first and second main surfaces; interlayer insulating films laminated on the first main surface in a thickness direction from the second main surface toward the first main surface; a top wiring arranged on a top interlayer insulating film of the plurality of interlayer insulating films, which is provided farthest from the first main surface in the thickness direction; and a passivation film arranged on the top interlayer insulating film so as to cover the top wiring. The top wiring includes a first wiring portion and a second wiring portion that extend in a first direction in plan view and are adjacent to each other in a second direction orthogonal to the first direction. A first distance between an upper surface of the top wiring and the top interlayer insulating film in the thickness direction is 2.7 μm or more.
1 . A method of manufacturing a semiconductor device, the method comprising steps of:
preparing a semiconductor substrate having a first main surface and a second main surface, the second main surface being an opposite surface of the first main surface;
forming a plurality of interlayer insulating films laminated and arranged on the first main surface in a thickness direction, the thickness direction being a direction from the second main surface toward the first main surface;
forming a top wiring on a top interlayer insulating film, the top interlayer insulating film being an interlayer insulating film of the plurality of interlayer insulating films and provided farthest from the first main surface in the thickness direction; and
forming a passivation film on the top interlayer insulating film so as to cover the top wiring,
wherein the top wiring includes a first wiring portion and a second wiring portion that extend in a first direction in plan view and are adjacent to each other in a second direction orthogonal to the first direction,
wherein a distance between an upper surface of the top wiring and the top interlayer insulating film in the thickness direction is defined as a first distance, and the first distance is 2.7 μm or more,
wherein the top wiring has a portion where a value obtained by dividing the first distance by a second distance is 1.35 or more, the second distance being a distance between the first wiring portion and the second wiring portion in the second direction,
wherein the step of forming the passivation film includes:
a step of forming a silicon oxide film; and
a step of forming a silicon nitride film or a silicon oxynitride film on the silicon oxide film,
wherein the step of forming the silicon oxide film includes:
a first step of forming a first layer by a PE-CVD method;
a second step of forming a second layer on the first layer by an HDP-CVD method; and
a third step of forming a third layer on the second layer by an HDP-CVD method,
wherein the second step is finished before a distance between an upper surface of a portion of the second layer, which is provided between the first wiring portion and the second wiring portion, and the top interlayer insulating film in the thickness direction exceeds 0.42 times or less as long as the first distance, and
wherein the third step is finished after a distance between an upper surface of a portion of the third layer, which is provided between the first wiring portion and the second wiring portion, and the top interlayer insulating film in the thickness direction becomes 0.65 times or more as long as the first distance.
2 . The method according to claim 1 , wherein the step of forming the silicon oxide film further includes a fourth step of forming a fourth layer on the third layer by an HDP-CVD method.
3 . The method according to claim 1 , wherein bias voltage or a gas ratio is changed during at least any of the second step and the third step.
4 . The method according to claim 1 , wherein the top wiring is formed of aluminum or an aluminum alloy.