Through molding contact enabled EMI shielding
Disclosed are examples of multi-die modules that includes a die (e.g., a power amplifier) and an adjacent die placed side-by-side and bonded onto a substrate with a mold compound. The die (e.g., a switch or a low noise amplifier) may be double EMI shielded to minimize or even eliminate EMI/noise coupling with the adjacent die (e.g., switch, low noise amplifier, etc.). Another mold compound, which can be thermally conductive, may be provided to improve transfer of heat away from the die and/or the adjacent die.
1 . A multi-die module, comprising:
a die and an adjacent die, the die comprising die connects on a lower surface thereof, and the adjacent die comprising adjacent die connects on a lower surface thereof;
a first mold compound (MC) comprising a die MC part and an adjacent die MC part, the die MC part configured to encapsulate sidewalls and an upper surface of the die, the adjacent die MC part configured to encapsulate sidewalls and an upper surface of the adjacent die, a through-mold trench formed in the first mold compound between the die MC part and the adjacent die MC part;
a first shield comprising a surround shield portion formed in the through-mold trench on a sidewall and on an upper surface of the die MC part, the first shield being formed of metal;
a second shield on the sidewalls and the upper surface of the die, the second shield formed of metal;
a second mold compound formed on the die MC part, on the adjacent die MC part, and in the through-mold trench on the surround shield portion;
wherein the die MC part at least partly encapsulates the second shield, and
wherein the first shield is electrically coupled to the second shield.
2 . The multi-die module of claim 1 , wherein the first shield is configured to connect to ground voltage.
3 . The multi-die module of claim 1 , wherein the second shield is formed directly on the sidewalls and the upper surface of the die.
4 . The multi-die module of claim 1 , wherein the first shield is in direct contact with the second shield.
5 . The multi-die module of claim 1 , wherein the second mold compound is thermally conductive.
6 . The multi-die module of claim 1 , further comprising:
a plurality of redistribution layers (RDL) including first and second RDLs, the first RDL being the lowermost RDL and the second RDL being the uppermost RDL, an upper surface of the first RDL being in direct contact with a lower surface of the first mold compound and a lower surface of the second mold compound within the through-mold trench,
wherein the first RDL comprises one or more first layer metals formed in a first interlayer dielectric (ILD),
wherein the second RDL comprises one or more second layer metals formed in a second ILD,
wherein the one or more first layer metals and the one or more second layer metals provide conductive paths between the die and one or more devices external to the multi-die module, or between the adjacent die and the one or more devices external to the multi-die module, or both, and
wherein at least one second metal layer is electrically coupled to the first shield.
7 . The multi-die module of claim 6 , wherein the first shield further comprises a lower shield portion formed in the second ILD physically connected with the surround shield portion, the lower shield portion being electrically coupled with at least one second layer metal.
8 . The multi-die module of claim 7 , wherein the lower shield portion is in physical contact with the at least one second layer metal.
9 . The multi-die module of claim 1 , wherein the first shield further comprises an adjacent shield portion formed in the through-mold trench on a sidewall of the adjacent die MC part.
10 . The multi-die module of claim 9 , wherein the adjacent shield portion is formed at least partially on the upper surface of the adjacent die MC part.
11 . The multi-die module of claim 1 , wherein the first shield is formed from any one or more of copper (Cu) and aluminum (Al).
12 . The multi-die module of claim 1 ,
wherein the die is a power amplifier, or
wherein the adjacent die is a switch (SW) or a low noise amplifier (LNA), or
both.
13 . The multi-die module of claim 1 , wherein the first and second mold compounds are formed of different materials.
14 . The multi-die module of claim 1 , wherein the multi-die module is incorporated into an apparatus selected from the group consisting of a music player, a video player, an entertainment unit, a navigation device, a communications device, a mobile device, a mobile phone, a smartphone, a personal digital assistant, a fixed location terminal, a tablet computer, a computer, a wearable device, an Internet of things (IoT) device, a laptop computer, a server, and a device in an automotive vehicle.
15 . A method of fabricating a multi-die module, the method comprising:
providing a die and an adjacent die, the die comprising die connects on a lower surface thereof, and the adjacent die comprising adjacent die connects on a lower surface thereof;
forming a first mold compound (MC) comprising a die MC part and an adjacent die MC part, the die MC part configured to encapsulate sidewalls and an upper surface of the die, the adjacent die MC part configured to encapsulate sidewalls and an upper surface of the adjacent die, a through-mold trench formed in the first mold compound between the die MC part and the adjacent die MC part;
forming a first shield comprising forming a surround shield portion in the through-mold trench on a sidewall and on an upper surface of the die MC part, the first shield being formed of metal;
forming a second shield on the sidewalls and the upper surface of the die, the second shield being formed of metal;
forming a second mold compound on the die MC part, on the adjacent die MC part, and in the through-mold trench on the surround shield portion;
wherein the die MC part at least partly encapsulates the second shield, and
wherein the first shield is electrically coupled to the second shield.
16 . The method of claim 15 , wherein the first shield is configured to connect to ground voltage.
17 . The method of claim 15 , wherein forming the second shield comprises:
providing a wafer of dies on a first carrier tape, the die connects being on an opposite side of the first carrier tape;
singulating the dies;
expanding the first carrier tape, the individual dies being separated from each other when the first carrier tape is expanded;
attaching a second carrier tape to the die connects of the separated dies;
removing the first carrier tape;
flipping the dies and the second carrier tape; and
depositing a metal on the sidewalls and upper surfaces of the dies.
18 . The method of claim 7 , wherein the first shield is in direct contact with the second shield.
19 . The method of claim 15 , wherein the second mold compound is thermally conductive.
20 . The method of claim 15 , further comprising:
forming a plurality of redistribution layers (RDL) including first and second RDLs, the first RDL being the lowermost RDL and the second RDL being the uppermost RDL, an upper surface of the first RDL being in direct contact with a lower surface of the first mold compound and a lower surface of the second mold compound within the through-mold trench,
wherein the first RDL comprises one or more first layer metals formed in a first interlayer dielectric (ILD),
wherein the second RDL comprises one or more second layer metals formed in a second ILD,
wherein the one or more first layer metals and the one or more second layer metals provide conductive paths between the die and one or more devices external to the multi-die module, or between the adjacent die and the one or more devices external to the multi-die module, or both, and
wherein at least one second metal layer is electrically coupled to the first shield.
21 . The method of claim 20 , wherein forming the first shield further comprises:
forming a lower shield portion in the second ILD physically connected with the surround shield portion, the lower shield portion being electrically coupled with at least one second layer metal.
22 . The method of claim 21 , wherein the lower shield portion is in physical contact with the at least one second layer metal.
23 . The method of claim 15 , wherein forming the first shield further comprises:
forming an adjacent shield portion in the through-mold trench on a sidewall of the adjacent die MC part.
24 . The method of claim 23 , wherein the adjacent shield portion is formed at least partially on the upper surface of the adjacent die MC part.
25 . The method of claim 15 , wherein the first shield is formed from any one or more of copper (Cu) and aluminum (Al).
26 . The method of claim 15 ,
wherein the die is a power amplifier, or
wherein the adjacent die is a switch (SW) or a low noise amplifier (LNA), or
both.
27 . The method of claim 15 , wherein the first and second mold compounds are formed of different materials.