Light emitting device, pixel structure comprising light emitting device, and manufacturing method therefor
A light emitting device includes a first semiconductor layer, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, a first insulating film surrounding an outer surface of at least one layer from among the first semiconductor layer, the second semiconductor layer, and the active layer, and a second insulating film surrounding an outer surface of the first insulating film.
1 . A light emitting device, comprising:
a first semiconductor layer;
an active layer disposed on the first semiconductor layer;
a second semiconductor layer disposed on the active layer;
a first insulating film surrounding an outer surface of at least one of the first semiconductor layer, the second semiconductor layer, and the active layer;
a second insulating film surrounding an outer surface of the first insulating film; and
a hydrophobic layer disposed on at least a portion of a surface of the second insulating film,
wherein the hydrophobic layer is formed to cover an entire upper surface of the second insulating film.
2 . The light emitting device according to claim 1 , wherein the second insulating film comprises an organic polymer material.
3 . The light emitting device according to claim 1 , wherein the second insulating film comprises at least one of polypropylene (PP), polystyrene (PS), polymethylmethacrylate (PMMA), polyethene (PE), polyamide (PA), polyester, and polytetrafluoroethene (PTFE).
4 . A pixel structure, comprising:
a substrate;
an electrode component comprising a first electrode disposed on the substrate, and
a second electrode disposed on a same plane as the first electrode to be spaced apart therefrom;
a light emitting device aligned between the first electrode and the second electrode; and
a coupling electrode component including a transparent conductive material and comprising:
a first coupling electrode that is disposed on the first electrode and electrically connects a first distal end of the light emitting device with the first electrode; and
a second coupling electrode that is disposed on the second electrode and electrically connects a second distal end of the light emitting device with the second electrode,
wherein the light emitting device comprises:
a first semiconductor layer;
an active layer disposed on the first semiconductor layer;
a second semiconductor layer disposed on the active layer;
a first insulating film surrounding an outer surface of at least one of the first semiconductor layer, the second semiconductor layer, and the active layer;
a second insulating film surrounding an outer surface of the first insulating film; and
a first hydrophobic layer disposed on an exposed surface of the second insulating film of the light emitting device, and
wherein the first coupling electrode and the second coupling electrode do not cover an upper side of the light emitting device,
wherein the first distal end and the second distal end face each other,
wherein an upper surface of the first coupling electrode and an upper surface of the second coupling electrode are disposed lower than the upper side of the light emitting device, and
wherein each of a first end of the light emitting device and a second end of the light emitting device opposite to the first end are spaced apart from both of the first electrode and the second electrode.
5 . The pixel structure according to claim 4 , further comprising:
an organic layer disposed on the light emitting device.
6 . The pixel structure according to claim 5 , further comprising:
a second hydrophobic layer disposed on a surface of the organic layer.
7 . The pixel structure according to claim 6 , further comprising:
a dam structure disposed outside the first and second electrodes and including an organic material.
8 . The pixel structure according to claim 7 , further comprising:
a third hydrophobic layer disposed on a surface of the dam structure.
9 . The pixel structure according to claim 8 , wherein the first coupling electrode and the second coupling electrode are disposed in an area where the first, second, and third hydrophobic layers are not disposed.
10 . The pixel structure according to claim 5 , further comprising:
an insulating layer disposed between the substrate and the light emitting device and including an inorganic material.
11 . A method of manufacturing a pixel structure, comprising:
forming a first electrode and a second electrode on a substrate to be spaced apart from each other;
forming a dam structure outside the first electrode and the second electrode, the dam structure being formed of organic material;
forming an insulating layer on the first electrode and the second electrode, the insulating layer being formed of inorganic material;
aligning a light emitting device between the first electrode and the second electrode;
plasma-treating the substrate on which the light emitting device is aligned to generate a plasma-treated substrate;
removing at least a portion of the insulating layer; and
forming a first coupling electrode and a second coupling electrode that electrically connect the light emitting device to the first electrode and the second electrode, respectively,
wherein the light emitting device comprises:
a first semiconductor layer;
an active layer disposed on the first semiconductor layer:
a second semiconductor layer disposed on the active layer;
a first insulating film surrounding an outer surface of at least one of the first semiconductor layer, the second semiconductor layer, and the active layer;
a second insulating film surrounding an outer surface of the first insulating film; and
a hydrophobic layer disposed on at least a portion of a surface of the second insulating film, and
wherein the hydrophobic layer is formed to cover an entire upper surface of the second insulating film.
12 . The method according to claim 11 , wherein in the plasma-treating, a gas containing fluorine is used.
13 . The method according to claim 12 , further comprising:
forming an organic layer on the light emitting device after the aligning of the light emitting device.
14 . The method according to claim 13 , wherein a second hydrophobic layer is formed on a surface of the organic layer by the plasma treatment.
15 . The method according to claim 14 , wherein a third hydrophobic layer is formed on a surface of the dam structure by the plasma treatment.
16 . The method according to claim 15 , wherein the forming of the first coupling electrode and the second coupling electrode comprises:
applying metal paste on the plasma-treated substrate; and
drying the metal paste,
wherein the metal paste is not compatible with the first, second, and third hydrophobic layers, and is applied to an area in which the first, second, and third hydrophobic layers are not formed.
17 . The pixel structure of claim 4 , wherein a length corresponding to a longest dimension of the light emitting device is less than a distance between the first electrode and the second electrode.
18 . A pixel structure, comprising:
a substrate:
an electrode component comprising a first electrode disposed on the substrate, and
a second electrode disposed on a same plane as the first electrode to be spaced apart therefrom;
a light emitting device aligned between the first electrode and the second electrode; and
a coupling electrode component including a transparent conductive material and comprising:
a first coupling electrode that is disposed on the first electrode and electrically connects a first distal end of the light emitting device with the first electrode; and
a second coupling electrode that is disposed on the second electrode and electrically connects a second distal end of the light emitting device with the second electrode,
wherein the light emitting device comprises:
a first semiconductor layer:
an active layer disposed on the first semiconductor layer:
a second semiconductor layer disposed on the active layer;
a first insulating film surrounding an outer surface of at least one of the first semiconductor layer, the second semiconductor layer, and the active layer;
a second insulating film surrounding an outer surface of the first insulating film; and
a first hydrophobic layer disposed on an exposed surface of the second insulating film of the light emitting device,
wherein the first coupling electrode and the second coupling electrode do not cover an upper side of the light emitting device,
wherein the first distal end and the second distal end face each other,
wherein an upper surface of the first coupling electrode and an upper surface of the second coupling electrode are disposed lower than the upper side of the light emitting device, and
wherein the first hydrophobic layer is disposed only on a portion of the second insulating film that faces away from the substrate, and
wherein the second insulating film surrounds an outer circumferential surface of the first insulating film.