Semiconductor device and method for fabricating the same
A semiconductor device including a first pad on a substrate extending in a first direction and a second direction, a lower electrode connected to and disposed on the first pad, first to third supporter layers disposed on a side wall of the lower electrode and sequentially spaced apart from each other in a third direction perpendicular to the first direction and the second direction, a dielectric film disposed on the lower electrode and the first to third supporter layers, and an upper electrode disposed on the dielectric film. At least one of a side wall of the lower electrode between the first supporter layer and the second supporter layer, and a side wall of the lower electrode between the second supporter layer and the third supporter layer includes a first portion including protrusions extending in the first direction and includes a second portion including no protrusions.
1 . A semiconductor device comprising:
a first pad disposed on a substrate extending in a first direction and a second direction, perpendicular to the first direction;
a lower electrode connected to and disposed on the first pad;
a first supporter layer, a second supporter layer, and a third supporter layer each disposed on a side wall of the lower electrode and sequentially spaced apart from each other in a third direction perpendicular to the first direction and the second direction;
a dielectric film disposed on the lower electrode and the first, second, and third supporter layers; and
an upper electrode disposed on the dielectric film,
wherein at least one of a side wall of the lower electrode between the first supporter layer and the second supporter layer, and a side wall of the lower electrode between the second supporter layer and the third supporter layer includes a first portion including protrusions extending in the first direction and includes a second portion including no protrusions, and
wherein each of bottom surfaces of the first, second, and third supporter layers is at a higher level than a bottom surface of the lower electrode in the third direction.
2 . The semiconductor device of claim 1 , wherein the second portion is flat.
3 . The semiconductor device of claim 1 , wherein a width, in the first direction, of the lower electrode having the second portion increases or is constant along the third direction.
4 . The semiconductor device of claim 1 , wherein the side wall of the lower electrode between the first supporter layer and the second supporter layer includes the second portion and the first portion disposed above the second portion.
5 . The semiconductor device of claim 4 , wherein the side wall of the lower electrode between the second supporter layer and the third supporter layer is flat.
6 . The semiconductor device of claim 1 , wherein the side wall of the lower electrode between the second supporter layer and the third supporter layer includes the first portion, and the second portion disposed above the first portion.
7 . The semiconductor device of claim 6 , wherein the side wall of the lower electrode between the first supporter layer and the second supporter layer is flat.
8 . The semiconductor device of claim 1 , wherein the side wall of the lower electrode between the first pad and the first supporter layer is flat.
9 . The semiconductor device of claim 1 , wherein a length of the lower electrode in the third direction is greater than a width of the lower electrode in the first direction.
10 . The semiconductor device of claim 1 , wherein the lower electrode includes a first extension extending in the first direction along an upper surface of the first pad, and a second extension protruding from one end of the first extension and extending in the third direction.
11 . A semiconductor device comprising:
a trench inside a substrate extending in a first direction and a second direction, perpendicular to the first direction;
a gate electrode that fills a part of the trench;
a storage contact which is disposed on at least one side of the gate electrode and connected to the substrate;
a first pad on the storage contact;
an etching stop film disposed on and covering a portion of the first pad;
a lower electrode which penetrates the etching stop film and is connected to the first pad;
a first supporter layer disposed on a side wall of the lower electrode and spaced apart, in a third direction perpendicular to the first and second directions, from the etching stop film;
a second supporter layer disposed on the first supporter layer and spaced apart, in the third direction, from the first supporter layer;
a third supporter layer disposed on the second supporter layer and spaced apart, in the third direction, from the second supporter layer;
a dielectric film which extends along an upper surface and a side wall of the lower electrode, and upper surfaces and lower surfaces of the first to third supporter layers; and
an upper electrode disposed on the dielectric film,
wherein the side wall of the lower electrode between the first supporter layer and the second supporter layer includes a first lower portion and a first upper portion on the first lower portion,
wherein the side wall of the lower electrode between the second supporter layer and the third supporter layer includes a second lower portion and a second upper portion on the second lower portion,
wherein at least one of the first upper portion and the second lower portion includes a plurality of protrusions protruding from the side wall of the lower electrode, and
wherein the second upper portion and the first lower portion are flat.
12 . The semiconductor device of claim 11 , wherein a width, in the first direction, of the lower electrode having the second upper portion and the first lower portion increases or is constant along the third direction.
13 . The semiconductor device of claim 11 , wherein the side wall of the lower electrode between the etching stop film and the first supporter layer is flat.
14 . The semiconductor device of claim 11 , wherein the upper surface of the third supporter layer is disposed on the same plane as the upper surface of the lower electrode.
15 . The semiconductor device of claim 11 , wherein a distance between the etching stop film and the first supporter layer is greater than a distance between the first supporter layer and the second supporter layer, and a distance between the second supporter layer and the third supporter layer.
16 . A semiconductor device comprising:
a first pad disposed on a substrate extending in a first direction and a second direction, perpendicular to the first direction;
a lower electrode connected to and disposed on the first pad;
a first supporter layer, a second supporter layer, and a third supporter layer each disposed on a side wall of the lower electrode and sequentially spaced apart from each other in a third direction perpendicular to the first direction and the second direction;
a dielectric film disposed on the lower electrode and the first, second, and third supporter layers; and
an upper electrode disposed on the dielectric film,
wherein at least one of a side wall of the lower electrode between the first supporter layer and the second supporter layer, and a side wall of the lower electrode between the second supporter layer and the third supporter layer includes a first portion including protrusions extending in the first direction and includes a second portion including no protrusions, and
wherein the side wall of the lower electrode between the first pad and the first supporter layer is flat.
17 . The semiconductor device of claim 16 , further comprising a contact pattern formed on the substrate,
wherein the first pad is positioned between the contact pattern and the lower electrode, and
wherein a width of the lower electrode in the first direction is greater than a width of the first pad in the first direction.
18 . The semiconductor device of claim 1 , wherein the protrusions protrude toward the dielectric film.