Method of manufacturing an organic light-emitting display device including forming the pixel definer by melting the pixel definer material layer patterned on the pixel electrode pattern
An organic light emitting device includes: a substrate; a first electrode provided on the substrate; a metal pattern provided along an edge of the first electrode; and a pixel definer provided on the metal pattern. The pixel definer covers an end portion of the first electrode and an end portion of the metal pattern. The pixel definer includes an opening exposing the first electrode.
1 . A method of manufacturing an organic light-emitting display device, the method comprising:
disposing a first electrode material layer, a metal layer, and a pixel definer material layer on a planarization layer in a display area including a plurality of pixels and a peripheral area surrounding the display area of a substrate;
disposing a first electrode in the display area and a first electrode pattern in a dam portion in the peripheral area by patterning the first electrode material layer and the planarization layer using a halftone mask, the halftone mask including a first region, a second region, a third region, and a fourth region;
removing a portion of the pixel definer material layer remaining on the first electrode to expose the metal layer;
removing the metal layer exposed by the removed portion of the pixel definer material layer to generate a metal pattern provided along an edge of the first electrode and a peripheral area metal pattern on the first electrode pattern; and
disposing a pixel definer and a peripheral area pixel definer by heat treating the pixel definer material layer remaining on the first electrode, the metal pattern, the first electrode pattern, and the peripheral area metal pattern,
wherein the pixel definer material layer is used as a mask to both form the first electrode by etching the first electrode material layer and to form the metal pattern by etching the metal layer,
wherein a part of the pixel definer material layer is melted by the heat treatment to generate a pixel definer,
wherein the pixel definer directly and entirely covers a top and directly and entirely covers all side surfaces of the metal pattern and an end portion of the first electrode while exposing a center portion of the first electrode,
wherein the peripheral area pixel definer directly and entirely covers a top and directly and entirely covers all side surfaces of the peripheral metal pattern, side surfaces of the first electrode pattern disposed below the peripheral metal pattern, side surfaces of the planarization pattern disposed below the first electrode pattern, and a top surface of an interlayer insulating layer disposed below the planarization pattern,
wherein the metal layer is etched to a greater extent than the first electrode so as to generate a step-shape and the step-shape is covered by the pixel definer, created from the pixel definer material layer used as a mask to form the first electrode and the metal pattern, the pixel definer covering the step-shape as a result of the pixel definer material layer being melted by the heat treatment, and
wherein the step-shape is generated by a side end portion of the metal pattern provided near a side end portion of the first electrode with the side end portion of the first electrode,
wherein disposing a first electrode in the display area and a dam portion in the peripheral area includes:
retaining the pixel definer material layer corresponding to the first region and the fourth region, removing a part of the pixel definer material layer corresponding to the second region in a thickness direction, and removing substantially the entire pixel definer material layer corresponding to the third region; and
removing the metal layer and the first electrode material layer corresponding to the third region,
wherein the fourth region has substantially a same transmittance as the first region,
wherein the dam portion corresponds to the fourth region, and
wherein the first region of the halftone mask is a light blocker, the second region of the halftone mask is a first light transmitter, the third region of the halftone mask is a second light transmitter, and the fourth region of the halftone mask is a peripheral light blocker that is disposed within the peripheral area.
2 . The method of claim 1 , wherein
the removing of the portion of the pixel definer material layer includes dry etching the pixel definer material layer, and
wherein the removing of the metal layer includes wet etching the metal layer.
3 . The method of claim 1 , wherein the metal layer has an etching selection ratio that is different from an etching selection ratio of the first electrode material layer.
4 . The method of claim 3 , wherein the removing of the metal layer and the first electrode material layer corresponding to the third region includes removing the metal layer prior to removing the first electrode material layer.
5 . The method of claim 1 , wherein the heat treatment is performed at a temperature that is substantially equal to or greater than about 200° C. and less than about 400° C.