Through-dielectric vias for direct connection and method forming same
A method includes bonding a tier-1 device die to a carrier, forming a first gap-filling region to encapsulate the tier-1 device die, forming a first redistribution structure over and electrically connected to the tier-1 device die, and bonding a tier-2 device die to the tier-1 device die. The tier-2 device die is over the tier-1 device die, and the tier-2 device die extends laterally beyond a corresponding edge of the tier-1 device die. The method further includes forming a second gap-filling region to encapsulate the tier-2 device die, removing the carrier, and forming a through-dielectric via penetrating through the first gap-filling region. The through-dielectric via is overlapped by, and is electrically connected to, the tier-2 device die. A second redistribution structure is formed, wherein the first redistribution structure and the second redistribution structure are on opposing sides of the tier-1 device die.
1 . A package comprising:
a first redistribution structure comprising:
a first dielectric layer continuously extending from a first edge to a second edge of the package, wherein the first edge and the second edge are opposing edges of the package; and
a first plurality of redistribution lines in the first dielectric layer;
a tier-1 device die over the first redistribution structure, wherein the tier-1 device die comprises:
a first semiconductor substrate; and
a first through-semiconductor via penetrating through the first semiconductor substrate;
a first gap-filling region encapsulating the tier-1 device die;
a second redistribution structure over and electrically connected to the tier-1 device die and the first through-semiconductor via, wherein the second redistribution structure comprises:
a second dielectric layer continuously extending from the first edge to the second edge of the package; and
a second plurality of redistribution lines in the second dielectric layer;
a tier-2 device die over and bonded to the tier-1 device die through conductive features in the second redistribution structure, wherein the tier-2 device die extends laterally beyond a corresponding edge of the tier-1 device die;
a second gap-filling region encapsulating the tier-2 device die;
a first through-dielectric via penetrating through the first gap-filling region, wherein the first through-dielectric via electrically connects the tier-2 device die to the first redistribution structure; and
a tier-3 device die over and bonded to the tier-2 device die, wherein the tier-3 device die comprises a die edge that forms a part of an outmost edge of the package.
2 . The package of claim 1 , wherein the first through-dielectric via is overlapped by the tier-2 device die.
3 . The package of claim 1 further comprising a second through-dielectric via penetrating through the first gap-filling region, the second redistribution structure, and the second gap-filling region.
4 . The package of claim 3 , wherein the second through-dielectric via comprises a portion continuously extending into the first gap-filling region, the second redistribution structure, and the second gap-filling region without interfaces therein.
5 . A package comprising:
a first redistribution structure;
a first device die over the first redistribution structure;
a first gap-filling region encapsulating the first device die;
a second device die over the first device die, wherein the second device die laterally extends beyond a first edge of the first device die;
a second gap-filling region encapsulating the second device die, wherein the second device die is inside the second gap-filling region;
a third device die over the second device die, wherein the third device die laterally extends beyond a second edge of the second device die, and wherein a third edge of the third device die forms a part of an outmost edge of the package;
a third gap-filling region contacting the third device die;
a first through-dielectric via in the first gap-filling region, wherein the first through-dielectric via is overlapped by, and is electrically connected to, the second device die; and
a second through-dielectric via overlapped by the third device die, wherein the second through-dielectric via penetrates through the first gap-filling region and the second gap-filling region.
6 . The package of claim 5 , wherein the second through-dielectric via comprises a portion continuously extending through the first gap-filling region and the second gap-filling region without interfaces therein.
7 . The package of claim 5 , wherein the second through-dielectric via has a first top end and a first bottom end wider than the first top end.
8 . The package of claim 7 , wherein the first through-dielectric via has a second top end and a second bottom end narrower than the second top end.
9 . The package of claim 1 , wherein top surfaces of the second gap-filling region and the tier-2 device die are coplanar, and bottom surfaces of the second gap-filling region and the tier-2 device die are coplanar.
10 . The package of claim 1 , wherein the second redistribution structure comprises a dielectric layer, and wherein a bottom surface of the dielectric layer contacts a first top surface of the first gap-filling region and a second top surface of the tier-1 device die.
11 . The package of claim 1 , wherein the second redistribution structure is higher than the tier-1 device die and lower than the tier-2 device die.
12 . The package of claim 5 further comprising a second redistribution structure over and contacting the first device die and the first gap-filling region, wherein conductive features in the second redistribution structure comprise a first metal pad joined to a second metal pad in the second device die.
13 . A package comprising:
a tier-1 device die, wherein the tier-1 device die comprises a semiconductor substrate and a first through-via penetrating through the semiconductor substrate;
a first gap-filling region, with the tier-1 device die being in the first gap-filling region;
a first dielectric layer over the tier-1 device die, wherein the first dielectric layer extends laterally beyond the tier-1 device die;
a first bond pad and a second bond pad in the first dielectric layer;
a tier-2 device die, wherein the first dielectric layer further extends laterally beyond the tier-2 device die, and the tier-2 device die comprising:
a second dielectric layer bonding to the first dielectric layer; and
a third bond pad in the second dielectric layer and bonding to the first bond pad;
a second gap-filling region, with the tier-2 device die being in the second gap-filling region; and
a second through-via in the first gap-filling region, with top surfaces of the second through-via and the first gap-filling region being coplanar, and bottom surfaces of the second through-via and the first gap-filling region being coplanar.
14 . The package of claim 13 , wherein the first dielectric layer extends to an edge of the package.
15 . The package of claim 13 further comprising a third through-via in the first gap-filling region, the first dielectric layer, and the second gap-filling region.
16 . The package of claim 13 further comprising:
a third dielectric layer over the tier-2 device die, wherein the third dielectric layer extends laterally beyond the tier-2 device die;
a fourth bond pad in the third dielectric layer;
a tier-3 device die comprising:
a fourth dielectric layer bonding to the third dielectric layer; and
a fifth bond pad bonding to the fourth bond pad; and
a third gap-filling region contacting the tier-3 device die to form a vertical interface.
17 . The package of claim 13 , wherein the second through-via is joined to a bottom surface of the second bond pad.
18 . The package of claim 13 further comprising a third through-via in the first gap-filling region and the second gap-filling region, with top surfaces of the third through-via and the second gap-filling region being coplanar, and bottom surfaces of the third through-via and the first gap-filling region being coplanar.
19 . The package of claim 16 , wherein the tier-3 device die comprises a first outmost edge forming a part of a second outmost edge of the package.
20 . The package of claim 5 , wherein the third gap-filling region contacts a fourth edge of the third device die, and wherein the third edge and the fourth edge are opposing outmost edges of the third device die.