Multi-stack nanosheet structure including semiconductor device
Provided is a multi-stack nanosheet structure that includes: at least a first nanosheet structure and at least a second nanosheet structure, above the substrate, separated from each other, wherein the first nanosheet structure and second nanosheet structure are adjacent to each other; a channel structure comprising a first portion on the first nanosheet structure, a second portion on the second nanosheet structure, and a third portion on the substrate between the first and second portions, wherein the first portion, the second portion and the third portion form a single continuous structure; a gate structure between the first and second portions on the third portion of the channel structure, wherein the gate structure comprises a gate dielectric layer comprising oxide; and at least a first source/drain region on the first nanosheet structure, and at least a second source/drain region on the second nanosheet structure, wherein the first source/drain region and the second source/drain region include an n-type or p-type dopant.
1 . A multi-stack nanosheet structure comprising:
a substrate;
at least a first nanosheet structure and at least a second nanosheet structure, above the substrate, separated from each other, wherein the first nanosheet structure and second nanosheet structure are adjacent to each other;
a channel structure comprising a first portion on the first nanosheet structure, a second portion on the second nanosheet structure, and a third portion on the substrate between the first and second portions, wherein the first portion, the second portion and the third portion form a single continuous structure;
a gate structure between the first and second portions on the third portion of the channel structure, wherein the gate structure comprises a gate dielectric layer comprising oxide; and
at least a first source/drain region on the first nanosheet structure, and at least a second source/drain region on the second nanosheet structure,
wherein the first source/drain region and the second source/drain region comprise an n-type or p-type dopant.
2 . The multi-stack nanosheet structure of claim 1 , wherein the first nanosheet structure comprises a lower-first nanosheet structure and an upper-first nanosheet structure, and the second nanosheet structure comprises a lower-second nanosheet structure and an upper-second nanosheet structure,
wherein the second source/drain region comprises a lower-second source/drain region and an upper-second source/drain region, one of which is on the lower-second nanosheet structure or the upper-second nanosheet structure, and
wherein the first source/drain region is on the lower-first nanosheet structure or the upper-first nanosheet structure, and the second source/drain region is on the lower-second source/drain region or the upper-second source/drain region.
3 . The multi-stack nanosheet structure of claim 2 , wherein the first source/drain region comprises a lower-first source/drain region and an upper-first source/drain region, one of which is on the lower-first nanosheet structure or the upper-first nanosheet structure.
4 . The multi-stack nanosheet structure of claim 3 , further comprising:
a first source/drain region contact plug on the lower-second source/drain region or the upper-second source/drain region which comprises the n-type or p-type dopant;
a second source/drain region contact plug on the lower-second source/drain region or the upper-second source/drain region which comprises the n-type or p-type dopant; and
a gate contact plug on the gate structure.
5 . The multi-stack nanosheet structure of claim 4 , wherein at least one of the first source/drain region contact plug, the second source/drain region contact plug, and the gate contact plug is below a top surface of the substrate at a back side of the multi-stack nanosheet structure.
6 . The multi-stack nanosheet structure of claim 3 , wherein the channel structure is on the substrate, the lower-first nanosheet structure, the upper-first nanosheet structure, the lower-second nanosheet structure, and the upper-second nanosheet structure.
7 . The multi-stack nanosheet structure of claim 1 , wherein the channel structure has a shape of character “U”.
8 . The multi-stack nanosheet structure of claim 7 , wherein the gate structure has a shape of character “T”.
9 . The multi-stack nanosheet structure of claim 1 , wherein top surfaces of the first and second portions of the channel structure are at a substantially same level as top surfaces of the first and second source/drain regions.
10 . The multi-stack nanosheet structure of claim 1 , wherein top surfaces of the first and second portions of the channel structure are at a level below top surfaces of the first and second source/drain regions.
11 . The multi-stack nanosheet structure of claim 10 , wherein one of the first and second source/drain regions and the gate structure forms an electrical fuse (eFuse).
12 . The multi-stack nanosheet structure of claim 1 , wherein a top surface of the gate structure is at a level below top surfaces of the first and second portions of the channel structure.
13 . The multi-stack nanosheet structure of claim 12 , wherein the top surface of the gate structure is at a level below top surfaces of the first and second source/drain regions.
14 . A multi-stack nanosheet structure comprising:
a substrate;
at least a first nanosheet structure and at least a second nanosheet structure above the substrate separated from each other;
a channel structure comprising a first portion on the first nanosheet structure, a second portion on the second nanosheet structure, and a central portion on the substrate between the first and second portions, wherein the first portion, the central portion and the second portion form a single continuous structure; and
at least a first source/drain region on the first nanosheet structure, and at least a second source/drain region on the second nanosheet structure,
wherein the channel structure comprises an n-type or p-type dopant, and
wherein the first source/drain region and the second source/drain region comprise a dopant having a polarity opposite to the n-type or p-type dopant in the channel structure.
15 . The multi-stack nanosheet structure of claim 14 , wherein the first nanosheet structure comprises a lower-first nanosheet structure and an upper-first nanosheet structure, and the second nanosheet structure comprises a lower-second nanosheet structure and a upper-second nanosheet structure,
wherein the second source/drain region comprises a lower-second source/drain region and an upper-second source/drain region, one of which is on the lower-second nanosheet structure or the upper-second nanosheet structure, and
wherein the first source/drain region is on the lower-first nanosheet structure or the upper-first nanosheet structure, and the second source/drain region is on the lower-second source/drain region or the upper-second source/drain region.
16 . The multi-stack nanosheet structure of claim 15 , wherein the first source/drain region comprises a lower-first source/drain region and an upper-first source/drain region, one of which is on the lower-first nanosheet structure or the upper-first nanosheet structure.
17 . The multi-stack nanosheet structure of claim 16 , further comprising:
a first source/drain region contact plug on the lower-second source/drain region or the upper-second source/drain region which comprises the n-type or p-type dopant;
a second source/drain region contact plug on the lower-second source/drain region or the upper-second source/drain region which comprises the n-type or p-type dopant; and
a channel contact plug on the channel structure.
18 . The multi-stack nanosheet structure of claim 17 , wherein at least one of the first source/drain region contact plug, the second source/drain region contact plug, and the channel contact plug is below a top surface of the substrate at a back side of the multi-stack nanosheet structure.
19 . The multi-stack nanosheet structure of claim 16 , wherein the channel structure is on the substrate, the lower-first nanosheet structure, the upper-first nanosheet structure, the lower-second nanosheet structure, and the upper-second nanosheet structure, and
wherein the channel structure has a shape of character “U”.
20 . The multi-stack nanosheet structure of claim 14 , wherein the first and second source/drain regions and the channel structure forms a bipolar junction transistor (BJT).
21 . A multi-stack nanosheet structure comprising:
a substrate;
at least a first nanosheet structure and at least a second nanosheet structure above the substrate separated from each other; and
at least a first source/drain region on the first nanosheet structure, and at least a second source/drain region on the second nanosheet structure, wherein the second source/drain region comprises a lower-second source/drain region and an upper-second source/drain region,
a gate structure;
a first source/drain region contact plug on the lower-second source/drain region or the upper-second source/drain region which comprises an n-type or p-type dopant;
a second source/drain region contact plug on the lower-second source/drain region or the upper-second source/drain region which comprises the n-type or p-type dopant; and
a substrate contact plug on the gate structure,
wherein the substrate comprises the n-type or p-type dopant, and
wherein the first source/drain region and the second source/drain region comprise a dopant having a polarity opposite to the n-type or p-type dopant in the substrate.
22 . The multi-stack nanosheet structure of claim 21 , wherein the first nanosheet structure comprises a lower-first nanosheet structure and an upper-first nanosheet structure, and the second nanosheet structure comprises a lower-second nanosheet structure and a upper-second nanosheet structure, and
wherein the first source/drain region is on the lower-first nanosheet structure or the upper-first nanosheet structure, and the second source/drain region is on the lower-second source/drain region or the upper-second source/drain region.
23 . The multi-stack nanosheet structure of claim 22 , wherein the first source/drain region comprises a lower-first source/drain region and an upper-first source/drain region, one of which is on the lower-first nanosheet structure or the upper-first nanosheet structure, and
wherein one of the lower-second source/drain region or the upper-second source/drain region is on the lower-second nanosheet structure or the upper-second nanosheet structure.
24 . The multi-stack nanosheet structure of claim 21 , wherein at least one of the first source/drain region contact plug, the second source/drain region contact plug, and the substrate contact plug is below a top surface of the substrate at a back side of the multi-stack nanosheet structure.
25 . The multi-stack nanosheet structure of claim 21 , wherein the first and second source/drain regions and a channel structure forms a bipolar junction transistor (BJT).