Packages formed using RDL-last process
A method includes bonding a first device die and a second device die to a substrate, and filling a gap between the first device die and the second device die with a gap-filling material. A top portion of the gap-filling material covers the first device die and the second device die. Vias are formed to penetrate through the top portion of the gap-filling material. The vias are electrically coupled to the first device die and the second device die. The method further includes forming redistribution lines over the gap-filling material using damascene processes, and forming electrical connectors over and electrically coupling to the redistribution lines.
1 . A structure comprising:
a first device die comprising:
a semiconductor substrate;
a first passivation layer over the semiconductor substrate;
a metal pad over the first passivation layer;
a second passivation layer over and contacting the metal pad and the first passivation layer, wherein a first portion of the second passivation layer has a first top surface lower than a second top surface of the metal pad;
a gap-filling material comprising:
a first portion encircling the first device die and contacting sidewalls of the first device die; and
a second portion covering the first device die; and
a conductive feature over the gap-filling material, wherein the conductive feature is electrically coupled to the metal pad.
2 . The structure of claim 1 further comprising a first metal via over and contacting the metal pad, wherein the first metal via comprises a lower portion in the second passivation layer, and an upper portion in the gap-filling material.
3 . The structure of claim 2 , wherein the first metal via comprises a vertical-and-straight edge continuously extending from the second top surface of the metal pad to a third top surface of the gap-filling material.
4 . The structure of claim 2 further comprising a second metal via penetrating through the gap-filling material, the second passivation layer, and the first passivation layer to contact an additional metal pad that is underlying the first passivation layer.
5 . The structure of claim 4 , wherein the second metal via comprises an additional vertical-and-straight edge continuously extending from a third top surface of the gap-filling material to a fourth top surface of the additional metal pad.
6 . The structure of claim 1 , wherein the gap-filling material comprises an oxide.
7 . The structure of claim 1 , wherein the second passivation layer is a conformal dielectric layer.
8 . The structure of claim 1 , wherein the second passivation layer comprises an inorganic dielectric material.
9 . The structure of claim 1 , wherein the first portion of the second passivation layer is in contact with the first passivation layer, and the second passivation layer further comprises an additional portion comprising an additional top surface higher than the first top surface of the first portion of the second passivation layer, and wherein the additional portion of the second passivation layer overlies and contacts the metal pad.
10 . The structure of claim 1 further comprising a first bond pad extending from a bottom surface of the semiconductor substrate into the semiconductor substrate.
11 . The structure of claim 10 further comprising:
a blank substrate; and
a second bond pad extending into the blank substrate, wherein the second bond pad is bonded to the first bond pad.
12 . The structure of claim 11 , wherein the blank substrate comprises a micro trench therein.
13 . A structure comprising:
a device die comprising:
a conductive pad; and
a passivation layer comprising a portion over the conductive pad;
a dielectric gap-filling material comprising:
a first portion encapsulating the device die; and
a second portion overlapping the device die, wherein the first portion and the second portion of the dielectric gap-filling material are formed of a same dielectric material;
a first conductive via over and contacting a top surface of the conductive pad, wherein the first conductive via comprises an upper portion in the second portion of the dielectric gap-filling material;
a low-k dielectric layer over and physically contacting the device die and the dielectric gap-filling material; and
a plurality of conductive features in the low-k dielectric layer.
14 . The structure of claim 13 , wherein the passivation layer is a conformal layer, and the dielectric gap-filling material contacts an additional top surface of the passivation layer.
15 . The structure of claim 13 further comprising a second conductive via, wherein the second conductive via extends from a top surface level of the dielectric gap-filling material to at least a bottom surface level of the conductive pad.
16 . The structure of claim 13 further comprising a blank substrate comprising a micro trench therein, wherein the micro trench comprises a first end and a second end, and wherein both of the first end and the second end extend to a bottom surface of the blank substrate.
17 . The structure of claim 13 , wherein the first portion and the second portion of the dielectric gap-filling material are portions of a continuous homogenous dielectric region.
18 . A structure comprising:
a first device die and a second device die, wherein the first device die comprises a top dielectric layer, wherein the top dielectric layer comprises a first top surface and a second top surface higher than the first top surface;
a dielectric gap-filling material encapsulating the first device die and the second device die therein, wherein the dielectric gap-filling material contacts both of the first top surface and the second top surface of the top dielectric layer;
metal vias penetrating through the dielectric gap-filling material to electrically couple to the first device die and the second device die; and
a plurality of redistribution lines over and electrically coupling to the metal vias.
19 . The structure of claim 18 , wherein all dielectric layers in the first device die are inorganic dielectric layers.
20 . The structure of claim 18 further comprising a plurality of inorganic low-k dielectric layers, wherein the plurality of redistribution lines are in the plurality of inorganic low-k dielectric layers.