Semiconductor device and manufacturing method of semiconductor device
A semiconductor device includes: a first gate structure including a cell region and a contact region; a channel structure located in the cell region of the first gate structure; and a supporter located in the contact region of the first gate structure.
1 . A semiconductor device comprising:
a first gate structure including a cell region and a contact region;
a channel structure located in the cell region of the first gate structure; and
a supporter located in the contact region of the first gate structure,
wherein the supporter comprises:
a first oxide layer;
a first nitride layer in the first oxide layer; and
a second oxide layer in the first nitride layer, and
wherein the supporter comprises a bowing shape.
2 . The semiconductor device of claim 1 , wherein the second oxide layer includes a void therein.
3 . The semiconductor device of claim 1 , wherein the supporter has a first width at a first level, has a second width at a second level, and has a third width at a third level located between the first level and the second level, the third width being greater than the first width and the second width.
4 . The semiconductor device of claim 1 , wherein the supporter has substantially at least one of a circular shape, an elliptical shape, a polygonal shape, and a line shape in a plane.
5 . The semiconductor device of claim 1 , further comprising:
a second gate structure; and
a slit structure located between the first gate structure and the second gate structure,
wherein the slit structure comprises:
a third oxide layer;
a second nitride layer in the third oxide layer; and
a fourth oxide layer in the second nitride layer, and
wherein the slit structure extends from the cell region to the contact region.
6 . The semiconductor device of claim 5 , wherein the slit structure has a bowing shape in a cross section.
7 . The semiconductor device of claim 5 , wherein at least one of the third oxide layer, the second nitride layer, and the fourth oxide layer includes a protrusion on an outer wall thereof.
8 . The semiconductor device of claim 5 , wherein the slit structure includes a source contact plug located in the fourth oxide layer.
9 . The semiconductor device of claim 8 , wherein the source contact plug includes a void therein.
10 . A semiconductor device comprising:
a first gate structure including a cell region and a contact region;
a channel structure located in the cell region of the first gate structure; and
a supporter located in the contact region of the first gate structure,
wherein the supporter comprises:
a first sealing layer;
a first stressor in the first sealing layer; and
a second sealing layer in the first stressor, and
wherein the supporter has a first width at a first level, has a second width at a second level, and has a third width at a third level located between the first level and the second level, the third width being greater than the first width and the second width.
11 . The semiconductor device of claim 10 , wherein the first stressor includes nitride, a low-k material, or a high-k material, or a combination thereof.
12 . The semiconductor device of claim 10 , wherein the first stressor includes silicon carbon nitride (SiCN), silicon boron nitride (SiBN), boron nitride (BN), aluminum oxide (AlO x ), or hafnium oxide (HfO x ), or a combination thereof.
13 . A semiconductor device, comprising:
a first gate structure including a cell region and a contact region;
a channel structure located in the cell region of the first gate structure; and
a supporter located in the contact region of the first gate structure,
wherein the supporter comprises:
a first sealing layer;
a first stressor in the first sealing layer; and
a second sealing layer in the first stressor, and
wherein the first sealing layer has a greater thickness than the second sealing layer.
14 . A semiconductor device, comprising:
a first gate structure including a cell region and a contact region;
a channel structure located in the cell region of the first gate structure; and
a supporter located in the contact region of the first gate structure,
wherein the supporter comprises:
a first sealing layer;
a first stressor in the first sealing layer; and
a second sealing layer in the first stressor;
a second gate structure; and
a slit structure located between the first gate structure and the second gate structure,
wherein the slit structure comprises:
a first insulating layer;
a second stressor in the first insulating layer; and
a second insulating layer in the second stressor, and
wherein the slit structure extends from the cell region to the contact region.
15 . The semiconductor device of claim 14 , wherein the slit structure includes a source contact plug located in the second insulating layer.
16 . The semiconductor device of claim 14 , wherein at least one of the first insulating layer, the second stressor, and the second insulating layer includes a protrusion on an outer wall thereof.
17 . A manufacturing method of a semiconductor device, the manufacturing method comprising:
forming a stack including a cell region and a contact region;
forming a first opening having a bowing shape in the contact region of the stack; and
forming, in the first opening, a supporter including a first oxide layer, a first nitride layer, and a second oxide layer.
18 . The manufacturing method of claim 17 , wherein the forming of the supporter comprises:
forming the first oxide layer in the first opening;
forming the first nitride layer in the first oxide layer; and
forming the second oxide layer in the first nitride layer.
19 . The manufacturing method of claim 18 , wherein the second oxide layer includes a void therein.
20 . The manufacturing method of claim 17 , further comprising:
forming, in the stack, a second opening extending from the cell region to the contact region and having a bowing shape; and
forming, in the second opening, a slit structure including a third oxide layer, a second nitride layer in the third oxide layer, and a fourth oxide layer in the second nitride layer.
21 . The manufacturing method of claim 20 , wherein the forming of the slit structure comprises:
forming a source contact plug in the fourth oxide layer.
22 . The manufacturing method of claim 21 , wherein the source contact plug includes a void therein.