Semiconductor package including metal pattern layer with open region which overlaps non-contact pad
A semiconductor package includes: a package substrate including a plurality of insulating layers and a plurality of metal pattern layers respectively disposed on the plurality of insulating layers, wherein each of the plurality of metal pattern layers has an interconnection layer; at least one semiconductor chip disposed on an upper surface of the package substrate, and connected to the interconnection layer; contact pads disposed on a lower surface of the package substrate, and connected to the interconnection layer; and non-contact pads disposed on the lower surface of the package substrate, and insulated from the interconnection layer, wherein a lowermost metal pattern layer among the plurality of metal pattern layers has a first open region at least partially overlapping at least one non-contact pad among the non-contact pads, in a direction perpendicular to the upper surface of the package substrate.
1 . A semiconductor package, comprising:
a package substrate including a plurality of insulating layers and a plurality of metal pattern layers respectively disposed on the plurality of insulating layers, wherein each of the plurality of metal pattern layers has an interconnection layer;
at least one semiconductor chip disposed on an upper surface of the package substrate, and connected to the interconnection layer;
contact pads disposed on a lower surface of the package substrate, and connected to the interconnection layer; and
non-contact pads disposed on the lower surface of the package substrate, and insulated from the interconnection layer,
wherein a lowermost metal pattern layer among the plurality of metal pattern layers has a first open region at least partially overlapping a central portion of at least one non-contact pad among the non-contact pads, in a direction perpendicular to the upper surface of the package substrate.
2 . The semiconductor package of claim 1 , wherein the lowermost metal pattern layer comprises a ground pattern, and the first open region is located in the ground pattern.
3 . The semiconductor package of claim 2 , wherein the first open region is a hole in the ground pattern.
4 . The semiconductor package of claim 1 , wherein the first open region has an area greater than an area of the at least one non-contact pad.
5 . The semiconductor package of claim 1 , wherein a next lowermost metal pattern layer among the plurality of metal pattern layers is disposed on the lowermost metal pattern layer and has at least one second open region overlapping the at least one non-contact pad in the vertical direction.
6 . The semiconductor package of claim 1 , wherein the at least one non-contact pad is positioned between one of the contact pads and an edge of the package substrate.
7 . The semiconductor package of claim 6 , wherein the contact pads comprise first and second signal pads for transmitting a differential signal, and the one contact pad is one of the first or second signal pads.
8 . The semiconductor package of claim 7 , wherein the other one of the first or second signal pads is disposed closer to the edge of the package substrate than the one of the first or second signal pads.
9 . The semiconductor package of claim 8 , wherein the at least one non-contact pad and the other one of the first or second signal pads are disposed side by side at the edge of the package substrate.
10 . The semiconductor package of claim 1 , wherein an insulating layer between the lowermost metal pattern layer and the non-contact pads has a thickness of about 20 μm or less.
11 . The semiconductor package of claim 1 , further comprising conductive bumps respectively disposed on the contact pads and the non-contact pads.
12 . The semiconductor package of claim 1 , wherein the at least one semiconductor chip comprises a plurality of semiconductor chips.
13 . The semiconductor package of claim 12 , wherein the plurality of semiconductor chips comprise a memory chip and a processor chip for controlling an operation of the memory chip.
14 . A semiconductor package, comprising:
a package substrate including a plurality of insulating layers and a plurality of metal pattern layers respectively disposed on the plurality of insulating layers, wherein each of the plurality of metal pattern layers has an interconnection layer;
a first semiconductor chip disposed on first surface of the package substrate, and connected to the interconnection layer;
a second semiconductor chip disposed on the first surface of the package substrate, and connected to the interconnection layer;
contact pads disposed on a second surface of the package substrate, and connected to the interconnection layer, wherein the contact pads include first and second signal pads for transmitting a differential signal, and
non-contact pads disposed on the second surface of the package substrate, and insulated from the interconnection layer,
wherein the non-contact pads comprise at least one non-contact pad disposed adjacent to the second signal pad and positioned closer to an edge of the package substrate than the second signal pad,
wherein a first metal pattern layer among the plurality of interconnection layers has an open region overlapping the at least one non-contact pad among the non-contact pads in a direction perpendicular to the first surface of the package substrate.
15 . The semiconductor package of claim 14 , wherein the first signal pad is disposed closer to the edge of the package substrate than the second signal pad.
16 . The semiconductor package of claim 15 , wherein the at least one non-contact pad and the first signal pad are disposed side by side at the edge of the package substrate.
17 . The semiconductor package of claim 14 , wherein the first semiconductor chip comprises a memory device, and
the second semiconductor chip comprises a processor chip configured to transmit/receive data to and from the memory device and to and from an external device using a serial interface.
18 . The semiconductor package of claim 17 , wherein the semiconductor package is a universal flash storage (UFS) device.
19 . A semiconductor package, comprising:
a package substrate having a plurality of insulating layers and a plurality of metal pattern layers respectively disposed on the plurality of insulating layers, wherein each of the plurality of metal pattern layers has an interconnection layer;
at least one semiconductor chip disposed on an upper surface of the package substrate, and connected to the interconnection layer;
contact pads disposed on a lower surface of the package substrate, and connected to the interconnection layer, wherein the contact pads include a first signal pad and a second signal pad for transmitting a differential signal;
non-contact pads disposed on the lower surface of the package substrate, and insulated from the interconnection layer;
contact bumps respectively disposed on the contact pads; and
non-contact bumps respectively disposed on the non-contact pads,
wherein a lowermost metal pattern layer among the plurality of interconnection layers has an open region at least partially overlapping at least one non-contact pad among the non-contact pads.
20 . An electronic device, comprising:
a circuit board having circuit lines; and
the semiconductor package of claim 19 disposed on the circuit board,
wherein the circuit lines comprise a first signal line and a second signal line, wherein the first signal line is connected to a contact bump disposed on the first signal pad, and the second signal line is connected to a contact bump disposed on the second signal pad and is connected to a non-contact bump disposed on the at least one non-contact pad.