IP Library Granted Patent US 12,645,148
Granted Patent B2
US 12,645,148 · App. 18/455,655 · Granted Jun 2, 2026

Extreme ultraviolet (EUV) radiation source apparatus, EUV lithography system, and method for generating extreme ultraviolet radiation

Inventors: Chien-Hsing Lu (Tainan City, TW); Chih-Chiang Tu (Taoyuan City, TW); Chih-Wei Wen (Tainan City, TW); Hsin-Fu Tseng (Hsinchu County, TW); Tzu Jeng Hsu (Taoyuan City, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
G03F7/70191G03F7/70033
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Quick Facts
Patent No.
US 12,645,148
App. No.
18/455,655
Granted
Jun 2, 2026
Kind
B2
Abstract

An EUV radiation source apparatus includes an EUV source vessel; a tin layer disposed in the EUV source vessel; a chamber disposed adjacent to the EUV source vessel; and a first filter disposed in the chamber, wherein the first filter includes a membrane and a mesh disposed on the membrane, and the membrane and the mesh are integrally formed. A method for generating EUV radiation includes: forming a first filter including a membrane and a mesh integrally formed with the membrane; disposing the first filter in a chamber adjacent to an EUV source vessel; and collecting fuel debris on the first filter in the chamber.

Claims (66)

1 . An extreme ultraviolet (EUV) radiation source apparatus, comprising:

an EUV source vessel;

a tin layer disposed in the EUV source vessel;

a chamber disposed adjacent to the EUV source vessel;

a first filter disposed in the chamber, wherein the first filter is a debris filter and is configured to collect a first fuel debris generated from a collision of a laser beam and the tin layer; and

a rotatable carrier on which the first filter is disposed, wherein the rotatable carrier is configured to rotate the first filter about a center of the first filter so that a second fuel debris is collected on a fresh portion of the first filter, and

wherein the first filter includes a membrane and a mesh disposed on the membrane, and the membrane and the mesh are integrally formed.

2 . The apparatus of claim 1 , further comprising:

a first mirror disposed in the chamber,

wherein the first filter is disposed between the tin layer and the first mirror.

3 . The apparatus of claim 2 , wherein the first filter includes silicon.

4 . The apparatus of claim 1 , further comprising:

a first mirror disposed in the chamber; and

a second mirror disposed in the chamber and adjacent to the first mirror;

a second filter disposed between the first mirror and the second mirror.

5 . The apparatus of claim 4 , wherein the second filter is disposed at an aperture position.

6 . The apparatus of claim 4 , wherein the second filter is an out-of-band radiation filter.

7 . The apparatus of claim 4 , wherein the second filter includes silicon, EUV pellicles or zirconium.

8 . The apparatus of claim 1 , wherein the mesh is a hexagonal wire mesh.

9 . The apparatus of claim 1 , wherein a profile of a wire of the mesh is trapezoidal from a cross-sectional view.

10 . The apparatus of claim 1 , further comprising:

a second filter disposed adjacent to the first filter;

wherein the second filter is attached to the rotatable carrier.

11 . An extreme ultraviolet (EUV) radiation source apparatus, comprising:

a chamber;

an EUV source configured to supply an EUV radiation having an EUV light path traveling along the chamber through an exit port;

a first filter located in the EUV light path and configured to allow the EUV radiation to pass through; and

a rotatable carrier on which the first filter is disposed, wherein the first filter is a debris filter, and the rotatable carrier is configured to rotate the first filter about a center of the first filter after a used portion of the first filter is contaminated by a fuel debris generated from the EUV source, and

wherein the first filter includes a first membrane and a first mesh integrally formed with the first membrane.

12 . The apparatus of claim 11 , further comprising:

a mirror located in the EUV light path and within the chamber,

wherein the first filter is disposed between the mirror and the exit port.

13 . The apparatus of claim 11 , further comprising:

a reticle disposed in the chamber;

a mirror located in the EUV light path and disposed between the reticle and the exit port;

a second filter,

wherein the second filter is an out-of-band radiation filter and is disposed between the mirror and the reticle.

14 . The apparatus of claim 11 , further comprising:

a reticle disposed in the chamber;

a mirror located in the EUV light path and disposed between the reticle and the exit port; and

a second filter disposed between the mirror and the reticle,

wherein the first filter is disposed between the mirror and the exit port, and the second filter includes a second membrane and a second mesh integrally formed with the second membrane.

15 . A method for generating extreme ultraviolet (EUV) radiation, comprising:

forming a first filter including a membrane and a mesh integrally formed with the membrane;

disposing the first filter in a chamber adjacent to an EUV source vessel;

collecting a first fuel debris on a first portion of the first filter in the chamber;

rotating the first filter about a center of the first filter; and

collecting a second fuel debris on a second portion, different from the first portion, of the first filter.

16 . The method of claim 15 , further comprising:

providing an EUV light path in the chamber,

wherein the first filter is disposed in the EUV light path.

17 . The method of claim 15 , further comprising:

disposing the first filter on a rotatable carrier in the chamber;

disposing a second filter on the rotatable carrier and adjacent to the first filter;

rotating the rotatable carrier after the first fuel debris and the second fuel debris are collected on the first filter; and

collecting a third fuel debris on the second filter.

18 . The method of claim 15 , further comprising:

transmitting an EUV radiation through the first filter,

wherein a transmittance of the first filter is greater than 60%.

19 . The method of claim 15 , further comprising:

providing a mirror in the chamber, wherein the first filter is disposed between the mirror and the EUV source vessel;

providing a reticle in the chamber;

providing a second filter between the mirror and the reticle; and

transmitting an EUV radiation through the first filter and the second filter,

wherein a total transmittance of the first filter and the second filter is greater than 60%.

20 . The method of claim 15 , wherein the first filter is rotated at a predetermined interval.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 5, 2023
From: LU, CHIEN-HSING; TU, CHIH-CHIANG; WEN, CHIH-WEI; TSENG, HSIN-FU; HSU, TZU JENG
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Reel/Frame 064788/0099 →
Continuity (2)
Provisional Application 63499971 · May 3, 2023
Related Publication 20240369939A1 · Nov 7, 2024
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