Method of manufacturing semiconductor substrate and method of manufacturing semiconductor device
A nitride semiconductor layer formed on a growth substrate is attached to a support substrate via a reversible adhesive layer. Next, the growth substrate is removed, a new substrate is bonded to the exposed nitride semiconductor layer, and subsequently, the reversible adhesive layer and the support substrate are removed. As a result, the nitride semiconductor layer is transferred on the new substrate from the growth substrate. Performed in a step of bonding the nitride semiconductor layer and the new substrate are a step of pressure-contacting the nitride semiconductor layer and the new substrate, a step of softening the reversible adhesive layer, and a step of curing the reversible adhesive layer again.
1 . A method of manufacturing a semiconductor substrate, comprising:
(a) attaching a semiconductor layer formed on a growth substrate and a support substrate via a reversible adhesive layer made up of a reversible adhesive agent and curing the reversible adhesive layer;
(b) removing the growth substrate to expose the semiconductor layer after the step (a);
(c) bonding a new substrate to the semiconductor layer after the step (b); and
(d) removing the reversible adhesive layer and the support substrate after the step (c), wherein
the step (c) includes:
(c- 1 ) pressure-contacting the semiconductor layer and the new substrate;
(c- 2 ) softening the reversible adhesive layer; and
(c- 3 ) curing the reversible adhesive layer again after the steps (c- 1 ) and (c- 2 ).
2 . The method of manufacturing the semiconductor substrate according to claim 1 , wherein
the reversible adhesive agent is an adhesive agent in which a cure state and a softened state are switched by a wavelength of light with which the reversible adhesive agent is irradiated.
3 . The method of manufacturing the semiconductor substrate according to claim 1 , wherein
the step (c- 2 ) is performed after the step (c- 1 ).
4 . The method of manufacturing the semiconductor substrate according to claim 2 , wherein
the step (c- 2 ) is performed after the step (c- 1 ).
5 . The method of manufacturing the semiconductor substrate according to claim 1 , wherein
the step (c- 1 ) is performed after the step (c- 2 ).
6 . The method of manufacturing the semiconductor substrate according to claim 2 , wherein
the step (c- 1 ) is performed after the step (c- 2 ).
7 . A method of manufacturing a semiconductor device, comprising:
performing the method of manufacturing the semiconductor substrate according to claim 1 , and further comprising
(e) forming a semiconductor element in the semiconductor layer prior to the step (a).
8 . A method of manufacturing a semiconductor device, comprising:
performing the method of manufacturing the semiconductor substrate according to claim 2 , and further comprising
(e) forming a semiconductor element in the semiconductor layer prior to the step (a).
9 . A method of manufacturing a semiconductor device, comprising:
performing the method of manufacturing the semiconductor substrate according to claim 3 , and further comprising
(e) forming a semiconductor element in the semiconductor layer prior to the step (a).
10 . A method of manufacturing a semiconductor device, comprising:
performing the method of manufacturing the semiconductor substrate according to claim 4 , and further comprising
(e) forming a semiconductor element in the semiconductor layer prior to the step (a).
11 . A method of manufacturing a semiconductor device, comprising:
performing the method of manufacturing the semiconductor substrate according to claim 5 , and further comprising
(e) forming a semiconductor element in the semiconductor layer prior to the step (a).
12 . A method of manufacturing a semiconductor device, comprising:
performing the method of manufacturing the semiconductor substrate according to claim 6 , and further comprising
(e) forming a semiconductor element in the semiconductor layer prior to the step (a).