Heating plate and substrate processing apparatus including the same
A substrate processing apparatus includes a chamber providing a space configured to process a substrate and a heating plate arranged within the chamber, the heating plate including a substrate plate configured to support the substrate and having a first region, a second region and a third region sequentially arranged in a radial direction from a center of the substrate plate, and a liquid metal pattern patterned on the substrate plate and extending on the first region, the second region and the third region, the substrate plate being stretchable.
1 . A substrate processing apparatus, comprising:
a chamber providing a space configured to process a substrate; and
a heating plate arranged within the chamber, the heating plate including a substrate plate configured to support the substrate and having a first region, a second region and a third region sequentially arranged in a radial direction from a center of the heating plate, and a liquid metal pattern patterned on the substrate plate and extending on the first region, the second region and the third region, the substrate plate being stretchable.
2 . The substrate processing apparatus of claim 1 , wherein the liquid metal pattern includes,
a plurality of nanowires;
a liquid metal surrounding the plurality of nanowires; and
an oxide layer formed on a surface of the liquid metal.
3 . The substrate processing apparatus of claim 2 , wherein
each of the plurality of nanowires includes at least one selected from silver, copper, and gold, and
the liquid metal includes a gallium-indium alloy or a gallium-indium-tin alloy.
4 . The substrate processing apparatus of claim 1 , wherein the liquid metal pattern includes,
a first extension line extending within the first region;
a second extension line extending within the second region; and
a third extension line extending within the third region.
5 . The substrate processing apparatus of claim 4 , wherein the first to third extension lines have a same width.
6 . The substrate processing apparatus of claim 4 , wherein the first to third extension lines are connected to each other to form one heating wire.
7 . The substrate processing apparatus of claim 6 , further comprising:
a power supply connected to both ends of the one heating wire.
8 . The substrate processing apparatus of claim 4 , wherein the first extension line has a first resistivity, the second extension line has a second resistivity different from the first resistivity, and the third extension line has a third resistivity different from the first and second resistivities.
9 . The substrate processing apparatus of claim 8 , wherein the second resistivity is greater than the first resistivity, and the third resistivity is greater than the first resistivity and less than the second resistivity.
10 . The substrate processing apparatus of claim 1 , wherein the substrate plate includes adsorption holes configured to vacuum-suction the substrate.
11 . A substrate processing apparatus, comprising:
a chamber providing a space configured to process a substrate; and
a substrate stage within the chamber and configured to support the substrate, the substrate stage including
a substrate plate configured to support the substrate and having a first region, a second region and a third region sequentially arranged in a radial direction from a center of the substrate plate, the substrate plate being stretchable; and
a liquid metal pattern patterned on the substrate plate and extending on the first region, the second region and the third region, the liquid metal pattern including
a first extension line extending within the first region;
a second extension line extending within the second region; and
a third extension line extending within the third region.
12 . The substrate processing apparatus of claim 11 , wherein the liquid metal pattern includes,
a plurality of nanowires;
a liquid metal surrounding the plurality of nanowires; and
an oxide layer formed on a surface of the liquid metal.
13 . The substrate processing apparatus of claim 12 , wherein
each of the plurality of nanowires includes at least one selected from silver, copper, and gold, and
the liquid metal includes a gallium-indium alloy or a gallium-indium-tin alloy.
14 . The substrate processing apparatus of claim 11 , wherein the first to third extension lines are connected to each other to form one heating wire.
15 . The substrate processing apparatus of claim 14 , further comprising:
a power supply connected to both ends of the one heating wire.
16 . The substrate processing apparatus of claim 15 , wherein the power supply may supply power to the one heating wire to heat the substrate at a range of 120° C. to 150° C.
17 . The substrate processing apparatus of claim 11 , wherein
the first extension line has a first resistivity, the second extension line has a second resistivity different from the first resistivity, and the third extension line has a third resistivity different from the first and second resistivities, and
the second resistivity is greater than the first resistivity, and the third resistivity is greater than the first resistivity and less than the second resistivity.
18 . The substrate processing apparatus of claim 11 , wherein the substrate plate includes adsorption holes configured to vacuum-suction the substrate.
19 . The substrate processing apparatus of claim 18 , wherein the adsorption holes are spaced apart from each other along a circumferential direction in the second region.
20 . The substrate processing apparatus of claim 18 , wherein
the substrate stage further includes a base plate configured to support the substrate plate, and
the base plate includes a vent line in fluid communication with the adsorption holes.