Backside deep trench isolation (BDTI) structure for CMOS image sensor
In some embodiments, the present disclosure relates to a method for forming an image sensor and associated device structure. A backside deep trench isolation (BDTI) structure is formed in a substrate separating a plurality of pixel regions. The BDTI structure encloses a plurality of photodiodes and comprising a first BDTI component arranged at a crossroad of the plurality of pixel regions and a second BDTI component arranged at remaining peripheries of the plurality of pixel regions. The first BDTI component has a first depth from a backside of the substrate smaller than a second depth of the second BDTI component.
1 . A method for forming an image sensor, the method comprising:
forming a plurality of photodiodes of a first doping type in a substrate respectively within a plurality of pixel regions arranged in rows and columns from a top view;
forming a blocking layer on a backside of the substrate covering an intersection of the plurality of pixel regions, wherein the blocking layer has a lateral side located between opposite sidewalls of the plurality of photodiodes;
performing an etch to form a backside deep trench isolation (BDTI) trench including etching through the blocking layer to a first depth within the substrate and etching to a second depth within the substrate at peripheries of the plurality of pixel regions, wherein the first depth is smaller than the second depth; and
filling an isolation material into the BDTI trench to form a BDTI structure in the substrate separating the plurality of pixel regions, the BDTI structure enclosing the plurality of photodiodes and comprising a first BDTI component with the first depth arranged at the intersection of the plurality of pixel regions and a second BDTI component with the second depth arranged at remaining peripheries of the plurality of pixel regions.
2 . The method of claim 1 , wherein the BDTI trench is formed according to
a hard mask having a first opening exposing the blocking layer and a second opening located at the remaining peripheries of the plurality of pixel regions.
3 . The method of claim 1 , wherein the first depth of the first BDTI component monotonically decreases from a center region to a boundary region.
4 . The method of claim 1 , wherein the filling of the isolation material comprises filling a stack of dielectric and metal layers into the BDTI trench.
5 . The method of claim 1 , wherein forming the BDTI structure further comprises:
performing a planarization process to remove an excessive portion of the isolation material above the substrate.
6 . The method of claim 1 , prior to the forming of the BDTI structure, further comprising:
forming an etch stop layer lining a frontside of the substrate; and
wherein the BDTI structure is then formed with the second BDTI component reaching to the etch stop layer.
7 . The method of claim 1 , wherein the second BDTI component is formed through the substrate with the second depth being a full depth of the substrate.
8 . The method of claim 1 , prior to the forming of the BDTI structure, further comprising:
forming a floating diffusion (FD) node of the first doping type from a frontside of the substrate at the intersection of the plurality of pixel regions; and
wherein the first BDTI component is formed overlying and spaced apart from the FD node.
9 . The method of claim 8 , prior to the forming of the BDTI structure, further comprising:
forming a plurality of doped isolation wells of a second doping type opposite to the first doping type extending from the frontside of the substrate separating the plurality of pixel regions; and
wherein the BDTI structure is then formed reaching into the plurality of doped isolation wells.
10 . The method of claim 1 , further comprising:
forming a plurality of color filters at the backside of the substrate corresponding to the plurality of photodiodes, the plurality of color filters meeting at interfaces overlying the first BDTI component and the second BDTI component of the BDTI structure.
11 . A method for forming an image sensor, the method comprising:
forming a first photodiode in a first pixel region of a substrate and a second photodiode in a second pixel region of the substrate adjacent to the first pixel region, wherein the first photodiode and the second photodiode are of a first doping type;
forming a blocking layer on a backside of the substrate between the first photodiode and the second photodiode, wherein the blocking layer partially covers a top surface of the first photodiode from a cross-sectional view;
forming and patterning a hard mask with a BDTI trench having a first portion directly above the blocking layer and a second portion respectively at opposite sides of the first photodiode and the second photodiode;
performing an etch to deepen the first portion of the BDTI trench through the blocking layer to a first depth into the substrate and to deepen the second portion of the BDTI trench to a second depth into the substrate, wherein the second depth is greater than the first depth; and
forming a backside deep trench isolation (BDTI) structure by filling the first portion and the second portion of the BDTI trench to respectively form a first BDTI component having the first depth and a second BDTI component having the second depth.
12 . The method of claim 11 , wherein the first photodiode comprises opposite sidewalls defining a width of the photodiode, and wherein the blocking layer has a lateralmost point located between the opposite sidewalls.
13 . The method of claim 11 , further comprising:
forming a floating diffusion (FD) node of the first doping type from a frontside of the substrate between the first photodiode and the second photodiode; and
wherein the blocking layer overlies the FD node.
14 . The method of claim 13 , wherein the first BDTI component is formed overlying and spaced apart from the FD node.
15 . The method of claim 11 , further comprising performing a planarization process to remove an excessive portion of the BDTI structure above the substrate, the hard mask, and the blocking layer.
16 . A method, comprising:
forming a plurality of photodiodes within a plurality of pixel regions of a substrate;
forming a floating diffusion (FD) node extending into the substrate from a frontside of the substrate, wherein the FD node is formed at an intersection of the plurality of pixel regions;
forming a blocking layer on a backside of the substrate overlying the FD node;
performing an etch to form a backside deep trench isolation (BDTI) trench including etching through the blocking layer to a first depth within the substrate and etching to a second depth within the substrate at peripheries of the plurality of pixel regions, wherein the first depth is smaller than the second depth; and
forming a BDTI structure by filling the BDTI trench to separate the plurality of pixel regions, the BDTI structure comprising a first BDTI component of the first depth arranged at the intersection of the plurality of pixel regions and a second BDTI component of the second depth arranged at remaining regions of the plurality of pixel regions.
17 . The method of claim 16 , wherein the first depth of the first BDTI component monotonically decreases from a center region to a boundary region of a blocking region.
18 . The method of claim 16 , wherein the first BDTI component is formed vertically spaced from the FD node.
19 . The method of claim 16 , wherein the first BDTI component is formed with a cross shape from a top view with the first depth monotonically decreasing from a center region to a peripheral region of the cross shape.
20 . The method of claim 19 , wherein the first BDTI component and the second BDTI component are formed separated from one another by a photodiode of the plurality of photodiodes from a first cross-sectional view and continuously connected from a second cross-sectional view.