IP Library Granted Patent US 12,663,596
Granted Patent B2
US 12,663,596 · App. 18/321,021 · Granted Jun 23, 2026

Pattern projector

Inventors: Refael Della Pergola (Jerusalem, IL); Roei Remez (Tel Aviv, IL); Assaf Avraham (Givatayim, IL); Yuval Tsur (Tel Aviv, IL); Yazan Alnahhas (Mountain View, CA)
Assignee: Apple Inc.
G02B6/4249G02B6/4204
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Quick Facts
Patent No.
US 12,663,596
App. No.
18/321,021
Filed
May 22, 2023
Granted
Jun 23, 2026
Kind
B2
Art Unit
2635
USPC
385/89
Abstract

An optoelectronic apparatus includes a semiconductor substrate and multiple arrays of emitters disposed on the semiconductor substrate and configured to emit beams of optical radiation. An optical substrate is mounted over the semiconductor substrate. An optical metasurface disposed on the optical substrate includes multiple optical apertures. Each aperture is configured to receive, collimate and split the beams emitted by a respective array of the emitters into a respective group of collimated sub-beams, so as to direct the collimated sub-beams toward a target at different, respective angles to form a pattern of spots on the target.

Claims (31)

1 . An optoelectronic apparatus, comprising:

a semiconductor substrate;

multiple arrays of emitters disposed on the semiconductor substrate and configured to emit beams of optical radiation;

an optical substrate mounted over the semiconductor substrate;

an optical metasurface disposed on the optical substrate and comprising multiple optical apertures, each aperture configured to receive, collimate and split the beams emitted by a respective array of the emitters into a respective group of collimated sub-beams, so as to direct the collimated sub-beams toward a target at different, respective angles to form a pattern of spots on the target; and

multiple lenses disposed between the semiconductor substrate and the optical substrate in alignment with the multiple arrays of emitters and configured to direct the beams emitted by each array onto a respective one of the multiple optical apertures.

2 . The apparatus according to claim 1 , wherein the multiple lenses comprise discrete individual lenses, which are respectively aligned with the multiple arrays of emitters.

3 . The apparatus according to claim 1 , wherein the multiple lenses are formed as a monolithic unit.

4 . The apparatus according to claim 1 , wherein the multiple lenses are configured as a compound lens.

5 . The apparatus according to claim 1 , and comprising one or more dies of semiconductor material, wherein the arrays of emitters are disposed on respective ones of the one or more dies, and the one or more dies are mounted on the semiconductor substrate.

6 . The apparatus according to claim 5 , wherein the optical metasurface is configured to project the collimated sub-beams so that the target is tiled by images of at least one of the one or more dies.

7 . The apparatus according to claim 5 , wherein the optical metasurface has a focal plane, and the one or more dies comprise:

at least one first die emitting first beams of the optical radiation at the focal plane, so as to form the pattern of spots on the target; and

at least one second die emitting second beams of the optical radiation at an emission plane that is displaced by a predetermined distance from the focal plane, so that the second beams illuminate the target with flood illumination.

8 . The apparatus according to claim 7 , wherein the at least one first die has a first thickness, and the at least one second die has a second thickness greater than the first thickness by the predetermined distance.

9 . The apparatus according to claim 7 , wherein the at least one second die is mounted on a pedestal, which elevates the emission plane of the at least one second die relative to the at least one first die by the predetermined distance.

10 . The apparatus according to claim 1 , and comprising:

one or more further arrays of emitters, which are disposed on the semiconductor substrate and are configured to emit further beams of optical radiation; and

a further optical metasurface, which is configured to receive and split the further beams into diverging sub-beams, and to direct the diverging sub-beams toward the target at different, respective angles to illuminate the target with flood illumination.

11 . The apparatus according to claim 10 , and comprising a controller, which is configured to actuate the apparatus so as to illuminate the target with either the pattern of spots or the flood illumination.

12 . The apparatus according to claim 1 , wherein the arrays of emitters are disposed on a back side of at least one semiconductor die, and the apparatus comprises microlenses formed on a front side of the at least one semiconductor die in alignment with the emitters and configured to direct the emitted beams toward the optical metasurface.

13 . The apparatus according to claim 12 , wherein each microlens comprises a tilted toroidal surface.

14 . The apparatus according to claim 1 , wherein the pattern of spots comprises multiple replicas of the multiple arrays of emitters, wherein the replicas are tiled across the target.

15 . The apparatus according to claim 1 , wherein the pattern of spots comprises multiple replicas of the multiple arrays of emitters, illuminating different, respective zones of the target.

16 . The apparatus according to claim 1 , wherein the emitters comprise vertical-cavity surface-emission lasers (VCSELs).

17 . The apparatus according to claim 1 , wherein the multiple arrays are disposed on the semiconductor substrate in a hexagonal pattern.

18 . The apparatus according to claim 1 , wherein the multiple arrays are disposed on the semiconductor substrate in a rectangular pattern.

19 . A method for optical projection, comprising:

mounting on a semiconductor substrate multiple arrays of emitters configured to emit beams of optical radiation;

mounting over the semiconductor substrate an optical substrate having an optical metasurface disposed thereon, the optical metasurface comprising multiple optical apertures, each aperture configured to receive, collimate and split the beams emitted by a respective array of the emitters into a respective group of collimated sub-beams, so as to direct the collimated sub-beams toward a target at different, respective angles to form a pattern of spots on the target; and

disposing multiple lenses between the semiconductor substrate and the optical substrate in alignment with the multiple arrays of emitters and configured to direct the beams emitted by each array onto a respective one of the optical apertures.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 25, 2023
From: DELLA PERGOLA, REFAEL; REMEZ, ROEI; AVRAHAM, ASSAF; TSUR, YUVAL; ALNAHHAS, YAZAN
To: APPLE INC.
Reel/Frame 063757/0736 →
Continuity (1)
Related Publication 20240393551A1 · Nov 28, 2024
References Cited (175)
US 4069463A · McGroddy et al. · 1978 [cited by applicant]
US 4935939A · Liau et al. · 1990 [cited by applicant]
US 5126869A · Lipchak et al. · 1992 [cited by applicant]
US 5812571A · Peters · 1998 [cited by applicant]
US 6055262A · Cox et al. · 2000 [cited by applicant]
US 6156980A · Peugh et al. · 2000 [cited by applicant]
US 6597713B2 · Ouchi · 2003 [cited by applicant]
US 6625028B1 · Dove et al. · 2003 [cited by applicant]
US 6674948B2 · Yeh et al. · 2004 [cited by applicant]
US 6936855B1 · Harrah · 2005 [cited by applicant]
US 6948838B2 · Kunstler · 2005 [cited by examiner]
US 7126218B1 · Darveaux et al. · 2006 [cited by applicant]
US 7271461B2 · Dutta · 2007 [cited by applicant]
US 7303005B2 · Reis et al. · 2007 [cited by applicant]
US 7800067B1 · Rajavel et al. · 2010 [cited by applicant]
US 7949024B2 · Joseph · 2011 [cited by applicant]
US 8050461B2 · Shpunt et al. · 2011 [cited by applicant]
US 8193482B2 · Itsler · 2012 [cited by applicant]
US 8259293B2 · Andreou · 2012 [cited by applicant]
US 8275270B2 · Shushakov et al. · 2012 [cited by applicant]
US 8350847B2 · Shpunt · 2013 [cited by applicant]
US 8355117B2 · Niclass · 2013 [cited by applicant]
US 8405020B2 · Menge · 2013 [cited by applicant]
US 8604603B2 · Lau et al. · 2013 [cited by applicant]
US 8761495B2 · Freedman et al. · 2014 [cited by applicant]
US 8766164B2 · Sanfilippo et al. · 2014 [cited by applicant]
US 8963069B2 · Drader et al. · 2015 [cited by applicant]
US 9024246B2 · Jiang et al. · 2015 [cited by applicant]
US 9052356B2 · Chu et al. · 2015 [cited by applicant]
US 9076707B2 · Harmon · 2015 [cited by applicant]
US 9106849B2 · Duggal et al. · 2015 [cited by applicant]
US 9273846B1 · Rossi · 2016 [cited by examiner]
US 9430006B1 · Hayashida · 2016 [cited by applicant]
US 9735539B2 · Jiang et al. · 2017 [cited by applicant]
US 9819144B2 · Lin et al. · 2017 [cited by applicant]
US 9826131B2 · Alasirnio et al. · 2017 [cited by applicant]
US 10034375B2 · Pyper et al. · 2018 [cited by applicant]
US 10103512B2 · Jiang et al. · 2018 [cited by applicant]
US 10305247B2 · Bills · 2019 [cited by examiner]
US 10362295B2 · Chen et al. · 2019 [cited by applicant]
US 10375330B2 · Rephaeli et al. · 2019 [cited by applicant]
US 10401480B1 · Gaalema et al. · 2019 [cited by applicant]
US 10454241B2 · Jiang et al. · 2019 [cited by applicant]
US 10470307B2 · Pyper et al. · 2019 [cited by applicant]
US 10551886B1 · de la Fuente · 2020 [cited by applicant]
US 10881028B1 · Huang et al. · 2020 [cited by applicant]
US 11067877B2 · Park · 2021 [cited by examiner]
US 11194091B2 · Subramanya · 2021 [cited by examiner]
US 11296136B2 · Nagai et al. · 2022 [cited by applicant]
US 11333821B2 · Subramanya · 2022 [cited by examiner]
US 11474410B2 · Chen · 2022 [cited by examiner]
US 11592726B2 · Engelen · 2023 [cited by examiner]
US 11699715B1 · Alnahhas · 2023 [cited by applicant]
US 11710945B2 · Alnahhas et al. · 2023 [cited by applicant]
US 11774060B2 · Eilertsen · 2023 [cited by examiner]
US 11979548B2 · Hsiao · 2024 [cited by examiner]
US 12025771B2 · Diaz et al. · 2024 [cited by applicant]
US 12123589B1 · Tsur · 2024 [cited by examiner]
US 12222445B2 · Fabiny · 2025 [cited by examiner]
US 12313812B2 · Remez et al. · 2025 [cited by applicant]
US 20020070443A1 · Mu et al. · 2002 [cited by applicant]
US 20020127752A1 · Thompson et al. · 2002 [cited by applicant]
US 20020176459A1 · Martinsen · 2002 [cited by applicant]
US 20030081385A1 · Mochizuki et al. · 2003 [cited by applicant]
US 20040001317A1 · Getz, Jr. et al. · 2004 [cited by applicant]
US 20040180470A1 · Romano et al. · 2004 [cited by applicant]
US 20060044803A1 · Edwards · 2006 [cited by examiner]
US 20070233208A1 · Kurtz et al. · 2007 [cited by applicant]
US 20070262441A1 · Chen · 2007 [cited by applicant]
US 20080240196A1 · Nishida · 2008 [cited by applicant]
US 20100061090A1 · Bergman · 2010 [cited by examiner]
US 20100072496A1 · Kobayakawa · 2010 [cited by examiner]
US 20100164079A1 · Dekker et al. · 2010 [cited by applicant]
US 20100208132A1 · Shiraishi · 2010 [cited by applicant]
US 20100278480A1 · Vasylyev · 2010 [cited by examiner]
US 20110026264A1 · Reed et al. · 2011 [cited by applicant]
US 20110278629A1 · McDaniel et al. · 2011 [cited by applicant]
US 20120002293A1 · Du et al. · 2012 [cited by applicant]
US 20120051384A1 · Geske et al. · 2012 [cited by applicant]
US 20130015331A1 · Birk et al. · 2013 [cited by applicant]
US 20130163627A1 · Seurin · 2013 [cited by applicant]
US 20130170203A1 · Cheng · 2013 [cited by examiner]
US 20130342835A1 · Blaksberg · 2013 [cited by applicant]
US 20140185285A1 · Jorgensen · 2014 [cited by examiner]
US 20140231630A1 · Rae et al. · 2014 [cited by applicant]
US 20140348192A1 · Prujimboom et al. · 2014 [cited by applicant]
US 20140353471A1 · Raynor et al. · 2014 [cited by applicant]
US 20150036114A1 · Schadt · 2015 [cited by examiner]
US 20150092802A1 · Gronenborn et al. · 2015 [cited by applicant]
US 20150163429A1 · Dai et al. · 2015 [cited by applicant]
US 20150195956A1 · Linderman · 2015 [cited by applicant]
US 20150200222A1 · Webster · 2015 [cited by applicant]
US 20150200314A1 · Webster · 2015 [cited by applicant]
US 20150255955A1 · Wang et al. · 2015 [cited by applicant]
US 20150340841A1 · Joseph · 2015 [cited by examiner]
US 20150342023A1 · Refai-Ahmed et al. · 2015 [cited by applicant]
US 20150348865A1 · Vincent et al. · 2015 [cited by applicant]
US 20160025993A1 · Mor et al. · 2016 [cited by applicant]
US 20160298822A1 · Michiels · 2016 [cited by examiner]
US 20160300825A1 · Hoeppel · 2016 [cited by applicant]
US 20160381749A1 · Catalano · 2016 [cited by examiner]
US 20170078611A1 · Manico et al. · 2017 [cited by applicant]
US 20170170219A1 · Iwafuchi et al. · 2017 [cited by applicant]
US 20170353012A1 · Barve et al. · 2017 [cited by applicant]
US 20180062345A1 · Bills et al. · 2018 [cited by applicant]
US 20180084241A1 · Chen et al. · 2018 [cited by applicant]
US 20180092241A1 · Rasmussen et al. · 2018 [cited by applicant]
US 20180092253A1 · Qiu et al. · 2018 [cited by applicant]
US 20180239105A1 · Lee et al. · 2018 [cited by applicant]
US 20180267214A1 · Rossi · 2018 [cited by examiner]
US 20180310407A1 · Pyper et al. · 2018 [cited by applicant]
US 20190049097A1 · Rossi · 2019 [cited by examiner]
US 20190121141A1 · Dykaar · 2019 [cited by examiner]
US 20190129035A1 · Valouch et al. · 2019 [cited by applicant]
US 20190196201A1 · Pierer · 2019 [cited by examiner]
US 20190264890A1 · Chang et al. · 2019 [cited by applicant]
US 20190268068A1 · Dacha · 2019 [cited by examiner]
US 20190295264A1 · Petilli · 2019 [cited by applicant]
US 20190324223A1 · Yim et al. · 2019 [cited by applicant]
US 20190326731A1 · Mathai et al. · 2019 [cited by applicant]
US 20190348819A1 · Laflaquiere · 2019 [cited by examiner]
US 20190381939A1 · Rafalowski et al. · 2019 [cited by applicant]
US 20200096639A1 · Panas et al. · 2020 [cited by applicant]
US 20200105827A1 · Subramanya · 2020 [cited by examiner]
US 20200228764A1 · Chen · 2020 [cited by examiner]
US 20200284883A1 · Ferreira et al. · 2020 [cited by applicant]
US 20200388640A1 · Yu et al. · 2020 [cited by applicant]
US 20210067619A1 · Wang · 2021 [cited by examiner]
US 20210083454A1 · Nakata et al. · 2021 [cited by applicant]
US 20210190291A1 · Huang · 2021 [cited by examiner]
US 20210313764A1 · Alnahhas · 2021 [cited by examiner]
US 20210336424A1 · Hegblom · 2021 [cited by examiner]
US 20220120412A1 · Bremerich · 2022 [cited by examiner]
US 20220179125A1 · Ren et al. · 2022 [cited by applicant]
US 20220187631A1 · Jang · 2022 [cited by examiner]
US 20220205611A1 · Yousefi · 2022 [cited by examiner]
US 20220317438A1 · Diaz et al. · 2022 [cited by applicant]
US 20220357484A1 · Hu · 2022 [cited by examiner]
US 20230073962A1 · Hauser et al. · 2023 [cited by applicant]
US 20230220974A1 · Eilertsen · 2023 [cited by examiner]
US 20240094437A1 · Remez · 2024 [cited by examiner]
US 20240094553A1 · Remez · 2024 [cited by examiner]
US 20240111030A1 · Kobayashi et al. · 2024 [cited by applicant]
US 20240393551A1 · Della Pergola · 2024 [cited by examiner]
US 20250321472A1 · Ovadia et al. · 2025 [cited by applicant]
CN 205123806U · 2016 [cited by applicant]
CN 107219711A · 2017 [cited by applicant]
CN 108332082A · 2018 [cited by applicant]
CN 208654319U · 2019 [cited by applicant]
CN 110867724A · 2020 [cited by applicant]
CN 210224593U · 2020 [cited by applicant]
CN 106444209B · 2020 [cited by applicant]
CN 110380211B · 2021 [cited by applicant]
CN 113359112A · 2021 [cited by applicant]
CN 110398850B · 2023 [cited by applicant]
EP 0949728A1 · 1999 [cited by applicant]
WO 2014087301A1 · 2014 [cited by applicant]
WO 2018093730A1 · 2018 [cited by applicant]
WO 2018132521A1 · 2018 [cited by applicant]
WO 2019149778A1 · 2019 [cited by applicant]
WO 2020026616A1 · 2020 [cited by applicant]
WO 2020039086A1 · 2020 [cited by applicant]
WO 2020074351A1 · 2020 [cited by applicant]
U.S. Appl. No. 17/221,856 Office Action dated Mar. 20, 2024. [cited by applicant]
U.S. Appl. No. 18/321,025 Office Action dated Apr. 12, 2024. [cited by applicant]
U.S. Appl. No. 17/221,856 Office Action dated Jun. 24, 2024. [cited by applicant]
Burrows, “Metalens grows up—Researchers develop a mass-producible, centimeter-scale Metalens for VR, Imaging,” Harvard School of Engineering and Applied Sciences, pp. 1-4, Dec. 3, 2019. [cited by applicant]
Thorlabs, Inc., “Introduction to Diffraction Grating,” Optics Selection Guide in Product Catalog, pp. 798-808, years 1999-2023, as downloaded from https://www.thorlabs.com/catalogpages/805.pdf. [cited by applicant]
Nielsen et al., “Meta Optical Elements—The Technology of Flat Metalenses,” Tech Briefs, SAE Media Group, pp. 1-8, Sep. 1, 2022, as downloaded from https://www.techbriefs.com/component/content/article/tb/supplements/bit/… [cited by applicant]
Boulder Nonlinear Systems, “High-Definition Time-of-Flight Imaging,” Product Information, pp. 1-10, year 2022, as downloaded from https://web.archive.org/web/20220124203941/https://www.bnonlinear.com/case-studies/high-d… [cited by applicant]
Remez et al., U.S. Appl. No. 18/307,820, filed Apr. 27, 2023. [cited by applicant]
Tsur et al., U.S. Appl. No. 18/321,025, filed May 22, 2023. [cited by applicant]
CN Application # 2021105284688 Office Action dated Sep. 29, 2023. [cited by applicant]
Non-Final Office Action, U.S. Appl. No. 18/614,862, dated Feb. 10, 2026. [cited by applicant]
Notice of References Cited, U.S. Appl. No. 18/614,862, dated Feb. 10, 2026. [cited by applicant]