Thin-film transistors having a metal nitride source material and related methods
An example thin-film transistor includes a substrate, a source including a body of source material on the substrate, a drain including a body of drain material on the substrate, a body of channel material between the source and the drain, a body of gate dielectric material on the body of channel material, and a body of gate material on the body of gate dielectric material. The source material includes a metal nitride.
1 . A thin-film transistor comprising:
a substrate;
a source including a body of source material on the substrate;
a drain including a body of drain material on the substrate;
a body of channel material between the source and the drain;
a body of gate dielectric material on the body of channel material; and
a body of gate material on the body of gate dielectric material;
wherein the source material comprises a metal nitride;
wherein the source further comprises a source carrier reservoir of a reservoir material for mitigating carrier starvation between the body of source material and the body of channel material; and
wherein the body of source material and the source carrier reservoir are in contact with the body of channel material.
2 . The thin-film transistor of claim 1 , wherein the drain material comprises a metal nitride.
3 . The thin-film transistor of claim 1 , wherein the channel material comprises an oxide semiconductor.
4 . The thin-film transistor of claim 1 , wherein the reservoir material is the same as the channel material.
5 . The thin-film transistor of claim 1 , wherein the reservoir material is an oxide semiconductor.
6 . The thin-film transistor of claim 1 , wherein the metal nitride is titanium nitride, zirconium nitride, hafnium nitride, or a combination of such.
7 . The thin-film transistor of claim 1 , wherein the body of source material includes a source-channel interface that is a layer of oxidized material.
8 . A method of manufacturing a thin-film transistor, the method comprising:
forming a source including a body of source material on a substrate;
forming a drain including a body of drain material on the substrate;
forming a body of channel material between the source and the drain;
forming a body of gate dielectric material on the body of channel material; and
forming a body of gate material on the body of gate dielectric material;
wherein the source material comprises a metal nitride;
wherein the forming of the body of channel material comprises:
forming a first layer of channel material;
performing a treatment on the first layer of channel material; and
forming a second layer of channel material on the first layer of channel material.
9 . The method of claim 8 , wherein the channel material is formed of an oxide semiconductor.
10 . The method of claim 8 , wherein the forming of the body of source material comprises using atomic layer deposition to deposit the body of source material.
11 . The method of claim 10 , further comprising applying a forming gas plasma to the body of source material during the atomic layer deposition of the body of source material.
12 . The method of claim 8 , further comprising applying a forming gas plasma to the substrate before the forming of the body of source material.
13 . The method of claim 8 , further comprising plasma treating the body of source material after the forming of the body of source material and before forming the body of channel material.
14 . The method of claim 8 , further comprising applying an oxygen plasma to the body of source material after the forming of the body of source material and before forming the body of channel material.
15 . The method of claim 8 , wherein the drain material is formed of a metal nitride.
16 . The method of claim 8 , further comprising forming a source carrier reservoir of a reservoir material between the body of source material and the body of channel material.
17 . The method of claim 16 , wherein the reservoir material is the same as the channel material.
18 . The method of claim 16 , wherein the reservoir material is highly doped oxide semiconductor.
19 . The method of claim 8 , wherein the metal nitride is titanium nitride, zirconium nitride, hafnium nitride, or a combination of such.
20 . A method of manufacturing a thin-film transistor, the method comprising:
forming a source including a body of source material on a substrate;
forming a drain including a body of drain material on the substrate;
forming a body of channel material between the source and the drain;
forming a source carrier reservoir of a reservoir material for mitigating carrier starvation between the body of source material and the body of channel material;
forming a body of gate dielectric material on the body of channel material; and
forming a body of gate material on the body of gate dielectric material;
wherein the source material comprises a metal nitride;
wherein the channel material is formed of an oxide semiconductor; and
wherein the body of source material and the source carrier reservoir are in contact with the body of channel material.
21 . The method of claim 20 , wherein the forming of the body of source material comprises using atomic layer deposition to deposit the body of source material.
22 . A method of manufacturing a thin-film transistor, the method comprising:
forming a source including a body of source material on a substrate;
forming a drain including a body of drain material on the substrate;
forming a source carrier reservoir of a reservoir material for mitigating carrier starvation between the body of source material and a body of channel material;
forming the body of channel material between the source and the drain;
forming a body of gate dielectric material on the body of channel material; and
forming a body of gate material on the body of gate dielectric material;
wherein the source material comprises a metal nitride; and
wherein the body of source material and the source carrier reservoir are in contact with the body of channel material.
23 . The method of claim 22 , wherein the reservoir material is the same as the channel material.
24 . The method of claim 22 , wherein the reservoir material is highly doped oxide semiconductor.