IP Library Granted Patent US 12,684,986
Granted Patent B2
US 12,684,986 · App. 18/285,303 · Granted Jul 14, 2026

Display device

Inventors: Takayuki Ikeda (Atsugi, JP); Yuichi Yanagisawa (Atsugi, JP); Yasumasa Yamane (Atsugi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10K59/38G09G3/3225H10K50/00H10K59/00H10K59/8791G09G2300/0852G09G2310/08H10K59/871H10K59/873
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,684,986
App. No.
18/285,303
Granted
Jul 14, 2026
Kind
B2
Abstract

A display device that has high display quality is provided. A highly reliable display device is provided. A display device with low power consumption is provided and a display device that can easily achieve a higher resolution is provided. A display device with both high display quality and a high resolution is provided. A display device with high contrast is provided. The display device includes a first layer, a second layer over the first layer, and a third layer over the second layer. The first layer includes a first transistor including silicon in a channel formation region. The second layer includes a second transistor including a metal oxide in a channel formation region. The third layer includes a first light-emitting element, a second light-emitting element, a third light-emitting element, an EL layer including a light-emitting layer exhibiting white light, a first coloring layer over the first light-emitting element, a second coloring layer over the second light-emitting element, and a third coloring layer over the third light-emitting element. Crosstalk is not observed between the second light-emitting element and the third light-emitting element.

Claims (76)

1 . A display device comprising:

a first layer;

a second layer over the first layer; and

a third layer over the second layer,

wherein the first layer comprises a first transistor comprising silicon in a channel formation region,

wherein the second layer comprises a second transistor comprising a metal oxide in a channel formation region,

wherein the third layer comprises:

a first light-emitting element;

a second light-emitting element;

a third light-emitting element;

an EL layer shared by the first light-emitting element, the second light-emitting element, and the third light-emitting element;

a first coloring layer over the first light-emitting element;

a second coloring layer over the second light-emitting element; and

a third coloring layer over the third light-emitting element,

wherein the EL layer comprises a light-emitting layer exhibiting white light, and

wherein crosstalk is not observed between the second light-emitting element and the third light-emitting element.

2 . The display device according to claim 1 ,

wherein the first coloring layer is configured to transmit red light,

wherein the second coloring layer is configured to transmit green light, and

wherein the third coloring layer is configured to transmit blue light.

3 . The display device according to claim 1 ,

wherein the first coloring layer is configured to transmit green light,

wherein the second coloring layer is configured to transmit blue light, and

wherein the third coloring layer is configured to transmit red light.

4 . The display device according to claim 1 ,

wherein the first coloring layer is configured to transmit blue light,

wherein the second coloring layer is configured to transmit red light, and

wherein the third coloring layer is configured to transmit green light.

5 . A display device comprising:

a first layer;

a second layer over the first layer; and

a third layer over the second layer,

wherein the first layer comprises a first transistor comprising silicon in a channel formation region,

wherein the second layer comprises a second transistor comprising a metal oxide in a channel formation region,

wherein the third layer comprises:

a first light-emitting element;

a second light-emitting element;

a third light-emitting element;

an EL layer shared by the first light-emitting element, the second light-emitting element, and the third light-emitting element;

a first coloring layer over the first light-emitting element;

a second coloring layer over the second light-emitting element; and

a third coloring layer over the third light-emitting element,

wherein the EL layer comprises a light-emitting layer exhibiting white light,

wherein crosstalk is not observed between the second light-emitting element and the third light-emitting element, and

wherein the second light-emitting element is adjacent to the third light-emitting element in a plan view.

6 . The display device according to claim 5 ,

wherein the first coloring layer is configured to transmit red light,

wherein the second coloring layer is configured to transmit green light, and

wherein the third coloring layer is configured to transmit blue light.

7 . The display device according to claim 5 ,

wherein the first coloring layer is configured to transmit green light,

wherein the second coloring layer is configured to transmit blue light, and

wherein the third coloring layer is configured to transmit red light.

8 . The display device according to claim 5 ,

wherein the first coloring layer is configured to transmit blue light,

wherein the second coloring layer is configured to transmit red light, and

wherein the third coloring layer is configured to transmit green light.

9 . A display device comprising:

a first layer;

a second layer over the first layer; and

a third layer over the second layer,

wherein the first layer comprises a first transistor comprising silicon in a channel formation region,

wherein the second layer comprises a second transistor comprising a metal oxide in a channel formation region,

wherein the third layer comprises:

a first light-emitting element;

a second light-emitting element;

a third light-emitting element;

an EL layer shared by the first light-emitting element, the second light-emitting element, and the third light-emitting element;

a first coloring layer over the first light-emitting element;

a second coloring layer over the second light-emitting element; and

a third coloring layer over the third light-emitting element,

wherein the EL layer comprises a light-emitting layer exhibiting white light,

wherein the first coloring layer is configured to transmit red light,

wherein the second coloring layer is configured to transmit green light,

wherein the third coloring layer is configured to transmit blue light, and

wherein, when the second light-emitting element emits light with brightness of a radiance higher than or equal to 0.001 W/sr/m 2 and the first light-emitting element and the third light-emitting element are set to display black, the first light-emitting element and the third light-emitting element each have a radiance lower than 0.0001 W/sr/m.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 2, 2023
From: IKEDA, TAKAYUKI; YANAGISAWA, YUICHI; YAMANE, YASUMASA
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 065094/0750 →
Priority Claims (1)
JP 2021-073493 · Apr 23, 2021 · national
Continuity (1)
Related Publication 20240196713A1 · Jun 13, 2024
References Cited (103)
US 5953985A · Kobayashi · 1999 [cited by applicant]
US 6120338A · Hirano et al. · 2000 [cited by applicant]
US 8928010B2 · Yamazaki et al. · 2015 [cited by applicant]
US 11487373B2 · Kubota et al. · 2022 [cited by applicant]
US 11587981B2 · Ikeda et al. · 2023 [cited by applicant]
US 11710760B2 · Kusunoki et al. · 2023 [cited by applicant]
US 12283632B2 · Yamazaki et al. · 2025 [cited by applicant]
US 20020072139A1 · Kashiwabara · 2002 [cited by applicant]
US 20020113546A1 · Seo et al. · 2002 [cited by applicant]
US 20070257945A1 · Miller · 2007 [cited by examiner]
US 20080197769A1 · Seo et al. · 2008 [cited by applicant]
US 20110148290A1 · Oota · 2011 [cited by applicant]
US 20120205676A1 · Seo et al. · 2012 [cited by applicant]
US 20120217515A1 · Yamazaki et al. · 2012 [cited by applicant]
US 20120256204A1 · Yoshizumi et al. · 2012 [cited by applicant]
US 20120273804A1 · Hatano · 2012 [cited by applicant]
US 20120276484A1 · Izumi et al. · 2012 [cited by applicant]
US 20130032841A1 · Jinbo et al. · 2013 [cited by applicant]
US 20130084531A1 · Hamaguchi et al. · 2013 [cited by applicant]
US 20130084664A1 · Yoshitoku et al. · 2013 [cited by applicant]
US 20130084666A1 · Oshige · 2013 [cited by applicant]
US 20130280839A1 · Sonoda et al. · 2013 [cited by applicant]
US 20130295705A1 · Sonoda et al. · 2013 [cited by applicant]
US 20140004640A1 · Hamaguchi et al. · 2014 [cited by applicant]
US 20140004642A1 · Otsuka et al. · 2014 [cited by applicant]
US 20140284576A1 · Sugisawa et al. · 2014 [cited by applicant]
US 20140340953A1 · Yamazaki et al. · 2014 [cited by applicant]
US 20150060826A1 · Matsumoto et al. · 2015 [cited by applicant]
US 20150069360A1 · Sato · 2015 [cited by applicant]
US 20150076475A1 · Hirakata · 2015 [cited by applicant]
US 20150076476A1 · Odaka et al. · 2015 [cited by applicant]
US 20150255520A1 · Seo et al. · 2015 [cited by applicant]
US 20150256157A1 · Kozuma · 2015 [cited by applicant]
US 20150348608A1 · Matsuzaki · 2015 [cited by applicant]
US 20160043338A1 · Seo et al. · 2016 [cited by applicant]
US 20160172595A1 · Malinowski et al. · 2016 [cited by applicant]
US 20160315133A1 · Sato · 2016 [cited by applicant]
US 20170141167A1 · Naganuma · 2017 [cited by applicant]
US 20170256754A1 · Defranco et al. · 2017 [cited by applicant]
US 20180190908A1 · Ke et al. · 2018 [cited by applicant]
US 20200057330A1 · Yamazaki et al. · 2020 [cited by applicant]
US 20200203662A1 · Mollard et al. · 2020 [cited by applicant]
US 20200403028A1 · Kusunoki et al. · 2020 [cited by applicant]
US 20210096678A1 · Kubota et al. · 2021 [cited by applicant]
US 20210143227A1 · Ikeda et al. · 2021 [cited by applicant]
US 20220130918A1 · Yamazaki et al. · 2022 [cited by applicant]
US 20220181572A1 · Ohsawa et al. · 2022 [cited by applicant]
US 20220209162A1 · Seo et al. · 2022 [cited by applicant]
US 20220216445A1 · Seo et al. · 2022 [cited by applicant]
US 20220223671A1 · Yamazaki et al. · 2022 [cited by applicant]
US 20220246763A1 · Yamazaki et al. · 2022 [cited by applicant]
US 20220320184A1 · Okazaki et al. · 2022 [cited by applicant]
US 20220348534A1 · Kubota et al. · 2022 [cited by applicant]
US 20220366845A1 · Kimura et al. · 2022 [cited by applicant]
US 20220392982A1 · Yamazaki et al. · 2022 [cited by applicant]
US 20220407040A1 · Yamazaki et al. · 2022 [cited by applicant]
US 20230032743A1 · Kubota et al. · 2023 [cited by applicant]
US 20230209944A1 · Ikeda et al. · 2023 [cited by applicant]
US 20250203944A1 · Yamazaki et al. · 2025 [cited by applicant]
CN 112074894A · 2020 [cited by applicant]
CN 112117285A · 2020 [cited by applicant]
CN 112578933A · 2021 [cited by applicant]
CN 113795928A · 2021 [cited by applicant]
JP 2000036385A · 2000 [cited by applicant]
JP 2002324673A · 2002 [cited by applicant]
JP 2003059663A · 2003 [cited by applicant]
JP 2008098106A · 2008 [cited by applicant]
JP 2008147072A · 2008 [cited by applicant]
JP 2008251270A · 2008 [cited by applicant]
JP 2012160473A · 2012 [cited by applicant]
JP 2013137484A · 2013 [cited by applicant]
JP 2014120218A · 2014 [cited by applicant]
JP 2014135251A · 2014 [cited by applicant]
JP 2014232568A · 2014 [cited by applicant]
JP 2015115178A · 2015 [cited by applicant]
JP 2016197494A · 2016 [cited by applicant]
JP 2019179696A · 2019 [cited by applicant]
JP 2020160305A · 2020 [cited by applicant]
JP 2021002034A · 2021 [cited by applicant]
JP 2021057039A · 2021 [cited by applicant]
KR 20120101997A · 2012 [cited by applicant]
KR 20200145729A · 2020 [cited by applicant]
KR 20210006409A · 2021 [cited by applicant]
KR 20210037556A · 2021 [cited by applicant]
KR 20220006561A · 2022 [cited by applicant]
TW 201248283 · 2012 [cited by applicant]
TW 202105797 · 2021 [cited by applicant]
WO WO2018087625 · 2018 [cited by applicant]
WO WO2019215538 · 2019 [cited by applicant]
WO WO2020229919 · 2020 [cited by applicant]
Zakhidov.A et al., “Orthogonal processing: A new strategy for organic electronics”, Chem. Sci. (Chemical Science), Apr. 7, 2011, vol. 2, No. 6, pp. 1178-1182. [cited by applicant]
Malinowski.P et al., “High resolution photolithography for direct view active matrix organic light-emitting diode augmented reality displays”, J. Soc. Inf. Display (Journal of the Society for Information Display), Apr. … [cited by applicant]
Malinowski.P et al., “Photolithographic patterning of organic photodetectors with a non-fluorinated photoresist system”, Organic Electronics, Jul. 12, 2014, vol. 15, No. 10, pp. 2355-2359. [cited by applicant]
Malinowski.P et al., “Multicolor 1250 ppi OLED Arrays Patterened by Photolithography”, SID Digest '16 : SID International Symposium Digest of Technical Papers, May 22, 2016, vol. 47, No. 1, pp. 1009-1012. [cited by applicant]
Papadopoulos.N et al., “AMOLED Displays with In-Pixel Photodetector”, Liquid Crystals and Display Technology, Jul. 9, 2020, pp. 1-19. [cited by applicant]
Ke.T et al., “Technology Developments in High-Resolution FMM-free OLED and BEOL IGZO TFTs for Power-Efficient Microdisplays”, SID Digest '21 : SID International Symposium Digest of Technical Papers, May 1, 2021, vol. 52… [cited by applicant]
Malinowski.P et al., “Integration of additional functionalities into the frontplane of AMOLED displays”, SID Digest '20 : SID International Symposium Digest of Technical Papers, Aug. 1, 2020, vol. 51, No. 1, pp. 646-649. [cited by applicant]
Malinowski.P et al., “Organic photolithography for displays with integrated fingerprint scanner”, SID Digest '19 : SID International Symposium Digest of Technical Papers, May 29, 2019, vol. 50, No. 1, pp. 1007-1010. [cited by applicant]
Ke.T et al., “Island and Hole Fabrication on OLED Stack for High-Resolution Sensor in Display Application”, IDW '20 : Proceedings of the 27th International Display Workshops, Dec. 9, 2020, vol. 27, pp. 902-905. [cited by applicant]
Gather.M et al., “Solution-Processed Full-Color Polymer-OLED Displays Fabricated by Direct Photolithography”, SID Digest '06 : SID International Symposium Digest of Technical Papers, Jun. 1, 2006, vol. 37, No. 1, pp. 90… [cited by applicant]
Malinowski.P et al., “Photolithography as Enabler of AMOLED Displays Beyond 1000 ppi”, SID Digest '17 : SID International Symposium Digest of Technical Papers, May 1, 2017, vol. 48, No. 1, pp. 623-626. [cited by applicant]
International Search Report (Application No. PCT/IB2022/053502) Dated Jul. 19, 2022. [cited by applicant]
Written Opinion (Application No. PCT/IB2022/053502) Dated Jul. 19, 2022. [cited by applicant]