IP Library Granted Patent US 12,689,178
Granted Patent B2
US 12,689,178 · App. 18/115,615 · Granted Jul 21, 2026

High peak power laser diode assembly

Inventors: Lihui Zheng (Tucson, AZ); Gregory Pennington (Tucson, AZ); Jason Helmrich (Tucson, AZ); Connor Magness (Tucson, AZ); Prabhuram Thiagarajan (Tucson, AZ)
Assignee: LEONARDO ELECTRONICS US INC.
H01S5/02469H01S5/005H01S5/4031
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Quick Facts
Patent No.
US 12,689,178
App. No.
18/115,615
Filed
Feb 28, 2023
Granted
Jul 21, 2026
Kind
B2
Art Unit
2828
USPC
372/36
Abstract

A laser diode apparatus includes a laser diode array having an emission surface and a mounting surface. A heatsink is in thermal communication with the laser diode array at the mounting surface. The heatsink extends perpendicularly away from at least one edge of the emission surface. Positive and negative electrical terminal blocks are in mechanical communication with the heatsink opposite the laser diode array. Electrical foils are in electrical communication with the laser diode array and the positive and negative terminals. The electrical foils extend perpendicularly away from the emission surface. The positive and negative electrical terminal blocks are electrically isolated from the heatsink. A cross-sectional footprint of the heatsink, positive and negative electrical terminal blocks, and electrical foils is not larger than 120% of a cross-sectional footprint of the laser diode array.

Claims (36)

1 . A laser diode apparatus, comprising:

a laser diode array having an emission surface and a mounting surface, wherein at least one mounting plate is affixed to the mounting surface;

a heatsink in thermal communication with the laser diode array at the mounting surface, the heatsink extending perpendicularly away from at least one edge of the emission surface;

positive and negative electrical terminal blocks in mechanical communication with the heatsink opposite the laser diode array;

electrical foils in electrical communication with the laser diode array and the positive and negative terminal blocks, the electrical foils extending perpendicularly away from the emission surface, wherein the positive and negative electrical terminal blocks are electrically isolated from the heatsink; and

an optical assembly located on the laser diode array within an emission path of the laser diode array, the optical assembly comprising a first optical component and at least a second optical component, wherein the first optical component is affixed to the at least one mounting plate by at least a first mounting tab having a first length, and wherein the at least second optical component is affixed to the at least one mounting plate by at least a second mounting tab having at least a second length, and wherein the first and at least second lengths correspond to a distance between the laser diode array and the optical assembly, and

wherein a cross-sectional footprint of the heatsink, positive and negative electrical terminal blocks, electrical foils, and optical assembly is not larger than 120% of a cross-sectional footprint of the laser diode array.

2 . The apparatus of claim 1 , wherein the laser diode array, positive and negative electrical terminal blocks, and electrical foils are soldered to the heatsink.

3 . The apparatus of claim 1 , wherein the optical assembly does not extend beyond the cross-sectional footprint of the laser diode array.

4 . The apparatus of claim 1 , wherein the first and at least second mounting tabs are soldered to the at least one mounting plate and to the first and at least second optical components, respectively.

5 . The apparatus of claim 1 , wherein the first and at least second mounting tabs are welded to the at least one mounting plate and to the first and at least second optical components, respectively.

6 . The apparatus of claim 1 , wherein the positive and negative electrical terminal blocks are oriented in the same direction.

7 . The apparatus of claim 1 , wherein the electrical foils are located adjacent to the heatsink.

8 . The apparatus of claim 1 , wherein the electrical foils are connected to the laser diode array at opposite edges of the laser diode array.

9 . The laser diode apparatus of claim 1 , comprising a plurality of mounting plates affixed across at least one side of the mounting surface.

10 . The laser diode apparatus of claim 9 , wherein the first optical component is affixed to the plurality of mounting plates by a plurality of first mounting tabs having a first length, and wherein the at least second optical component is affixed to the plurality of mounting plates by a plurality of at least second mounting tabs having at least a second length.

11 . A method of manufacturing a laser diode assembly, comprising the following steps:

mechanically coupling a laser diode array and a heatsink, wherein the laser diode array has an emission surface and a mounting surface, wherein at least one mounting plate is affixed to the mounting surface, wherein the heatsink extends perpendicularly away from at least one edge of the emission surface, wherein the emission surface and the heatsink are in thermal communication;

mechanically coupling positive and negative electrical terminal blocks with the heatsink opposite the laser diode array;

electrically coupling electrical foils with the laser diode array and the positive and negative terminals, the electrical foils extending perpendicularly away from the emission surface, wherein the positive and negative electrical terminal blocks are electrically isolated from the heatsink; and

mechanically coupling an optical assembly on the laser diode array within an emission path of the laser diode array, the optical assembly comprising a first optical component and at least a second optical component, wherein the first optical component is affixed to the at least one mounting plate by at least a first mounting tab having a first length, and wherein the at least second optical component is affixed to the at least one mounting plate by at least a second mounting tab having at least a second length, and wherein the first and at least second lengths correspond to a distance between the laser diode array and the optical assembly, and

wherein a cross-sectional footprint of the heatsink, positive and negative electrical terminal blocks, electrical foils, and optical assembly is not larger than 120% of a cross-sectional footprint of the laser diode array.

12 . The method of claim 11 , wherein the laser diode array, positive and negative electrical terminal blocks, and electrical foils are soldered to the heatsink.

13 . The method of claim 11 , wherein the optical assembly does not extend beyond the cross-sectional footprint of the laser diode array.

14 . The method of claim 11 , wherein the first and at least second mounting tabs are soldered to the at least one mounting plate and to the first and at least second optical components, respectively.

15 . The method of claim 11 , wherein the first and at least second mounting tabs are welded to the at least one mounting plate and to the first and at least second optical components, respectively.

16 . The method of claim 11 , wherein the electrical foils are located adjacent to the heatsink.

17 . A method of attaching optical components to a laser diode array, comprising the following steps:

flowing solder along at least a portion of a first and at least second optical components;

positioning first and at least second mounting tabs on the first and at least second optical components, respectively, at a location of the flowed solder, wherein the first mounting tab has a first length, and wherein the at least second mounting tab has at least a second length, and wherein the first and at least second lengths correspond to a mounted distance between the laser diode array and the first and at least second optical components, respectively;

flowing solder along at least a portion of the laser diode array;

positioning at least one mounting plate on the laser diode array at a location of the flowed solder; and

attaching the first and at least second mounting tabs to the at least one mounting plate by at least one from the set of: soldering and welding.

18 . The method of claim 17 , wherein the first and at least second optical components are positioned one on top of another and within a cross-sectional footprint of the laser diode array.

19 . The method of claim 17 , wherein at least one of the first and at least second optical components comprises at least one pedestal extending from a surface of the at least one optical component, and wherein the solder is flowed along the at least one pedestal.

20 . The method of claim 17 , wherein at least one of the first and at least second mounting tabs is soldered to more than one of the first and at least second optical components.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 22, 2026
From: ZHENG, LIHUI; PENNINGTON, GREGORY; HELMRICH, JASON; MAGNESS, CONNOR L.; THIAGARAJAN, PRABHURAM
To: LEONARDO ELECTRONICS US INC.
Reel/Frame 075038/0914 →
Continuity (2)
Provisional Application 63315497 · Mar 1, 2022
Related Publication 20230283043A1 · Sep 7, 2023
References Cited (206)
US 3613028A · Seidel · 1971 [cited by applicant]
US 3711939A · Stoll · 1973 [cited by applicant]
US 3805375A · LaCombe et al. · 1974 [cited by applicant]
US 3936322A · Blum et al. · 1976 [cited by applicant]
US 4092614A · Sakuma et al. · 1978 [cited by applicant]
US 4156879A · Lee · 1979 [cited by applicant]
US 4306278A · Fulton et al. · 1981 [cited by applicant]
US 4653056A · Baer et al. · 1987 [cited by applicant]
US 4767674A · Shirai · 1988 [cited by applicant]
US 4803691A · Scifres et al. · 1989 [cited by applicant]
US 4881237A · Donnelly · 1989 [cited by applicant]
US 4903274A · Taneya et al. · 1990 [cited by applicant]
US 4947401A · Hinata et al. · 1990 [cited by applicant]
US 4980893A · Thornton et al. · 1990 [cited by applicant]
US 4993148A · Adachi · 1991 [cited by applicant]
US 5008737A · Burnham et al. · 1991 [cited by applicant]
US 5031187A · Orenstein et al. · 1991 [cited by applicant]
US 5040187A · Karpinski · 1991 [cited by applicant]
US 5045972A · Supan · 1991 [cited by applicant]
US 5060237A · Peterson · 1991 [cited by applicant]
US 5061974A · Onodera et al. · 1991 [cited by applicant]
US 5099488A · Ahrabi et al. · 1992 [cited by applicant]
US 5102825A · Brennan et al. · 1992 [cited by applicant]
US 5105429A · Mundinger et al. · 1992 [cited by applicant]
US 5105430A · Mundinger et al. · 1992 [cited by applicant]
US 5128951A · Karpinski · 1992 [cited by applicant]
US 5140466A · Parker · 1992 [cited by applicant]
US 5166761A · Olson · 1992 [cited by applicant]
US 5202706A · Hasegawa · 1993 [cited by applicant]
US 5212706A · Jain · 1993 [cited by applicant]
US 5212707A · Heidel et al. · 1993 [cited by applicant]
US 5253260A · Palombo · 1993 [cited by applicant]
US 5284790A · Karpinski · 1994 [cited by applicant]
US 5298762A · Ou · 1994 [cited by applicant]
US 5305344A · Patel · 1994 [cited by applicant]
US 5311530A · Wagner et al. · 1994 [cited by applicant]
US 5311535A · Karpinski · 1994 [cited by applicant]
US 5325384A · Herb et al. · 1994 [cited by applicant]
US 5394426A · Joslin · 1995 [cited by applicant]
US 5418799A · Tada · 1995 [cited by applicant]
US 5440577A · Tucker · 1995 [cited by applicant]
US 5450430A · Chang · 1995 [cited by applicant]
US 5455738A · Montesano et al. · 1995 [cited by applicant]
US 5497391A · Paoli · 1996 [cited by applicant]
US 5504767A · Jamison et al. · 1996 [cited by applicant]
US 5521931A · Biegelsen et al. · 1996 [cited by applicant]
US 5526373A · Karpinski · 1996 [cited by applicant]
US 5568498A · Nilsson · 1996 [cited by applicant]
US 5593815A · Ahn · 1997 [cited by applicant]
US 5627850A · Irwin et al. · 1997 [cited by applicant]
US 5644586A · Kawano et al. · 1997 [cited by applicant]
US 5679963A · Klem et al. · 1997 [cited by applicant]
US 5764675A · Juhala · 1998 [cited by applicant]
US 5778020A · Gokay · 1998 [cited by applicant]
US 5783316A · Colella et al. · 1998 [cited by applicant]
US 5812573A · Shiomi et al. · 1998 [cited by applicant]
US 5835515A · Huang et al. · 1998 [cited by applicant]
US 5835518A · Mundinger et al. · 1998 [cited by applicant]
US 5848083A · Haden et al. · 1998 [cited by applicant]
US 5856990A · Nilsson · 1999 [cited by applicant]
US 5909458A · Freitas et al. · 1999 [cited by applicant]
US 5913108A · Stephens et al. · 1999 [cited by applicant]
US 5923692A · Staskus et al. · 1999 [cited by applicant]
US 5930279A · Apollonov et al. · 1999 [cited by applicant]
US 5987045A · Albares · 1999 [cited by applicant]
US 6031285A · Nishibayashi · 2000 [cited by applicant]
US 6101208A · Gokay · 2000 [cited by applicant]
US 6147365A · Fischer et al. · 2000 [cited by applicant]
US 6208677B1 · Moyer · 2001 [cited by applicant]
US 6252179B1 · Lauffer · 2001 [cited by applicant]
US 6281471B1 · Smart · 2001 [cited by applicant]
US 6295307B1 · Hoden et al. · 2001 [cited by applicant]
US 6352873B1 · Hoden · 2002 [cited by applicant]
US 6396857B1 · Labranche · 2002 [cited by applicant]
US 6424667B1 · Endriz et al. · 2002 [cited by applicant]
US 6480514B1 · Lorenzen et al. · 2002 [cited by applicant]
US 6493373B1 · Boucart · 2002 [cited by applicant]
US 6535533B2 · Lorenzen et al. · 2003 [cited by applicant]
US 6535541B1 · Boucart et al. · 2003 [cited by applicant]
US 6542531B2 · Sirbu · 2003 [cited by applicant]
US 6727117B1 · McCoy · 2004 [cited by applicant]
US 6865200B2 · Takigawa et al. · 2005 [cited by applicant]
US 7016383B2 · Rice · 2006 [cited by applicant]
US 7286359B2 · Khbeis et al. · 2007 [cited by applicant]
US 7359413B2 · Tzuk et al. · 2008 [cited by applicant]
US 7529286B2 · Gokay et al. · 2009 [cited by applicant]
US 7660335B2 · Thiagarajan et al. · 2010 [cited by applicant]
US 7864825B2 · Thiagarajan et al. · 2011 [cited by applicant]
US 7944955B2 · Thiagarajan et al. · 2011 [cited by applicant]
US 8017935B2 · Staszewski et al. · 2011 [cited by applicant]
US 8653550B2 · Mastro · 2014 [cited by applicant]
US 8664524B2 · Garnett · 2014 [cited by applicant]
US 8848753B2 · Koenning · 2014 [cited by applicant]
US 10120149B1 · Mathai · 2018 [cited by applicant]
US 11406004B2 · Ruben et al. · 2022 [cited by applicant]
US 20010017870A1 · Hayakawa · 2001 [cited by applicant]
US 20020001864A1 · Ishikawa et al. · 2002 [cited by applicant]
US 20020009106A1 · Miyokawa et al. · 2002 [cited by applicant]
US 20020014631A1 · Iwata · 2002 [cited by applicant]
US 20020025096A1 · Wang et al. · 2002 [cited by applicant]
US 20020086483A1 · Kim · 2002 [cited by applicant]
US 20020086486A1 · Tanaka · 2002 [cited by applicant]
US 20020172244A1 · Li et al. · 2002 [cited by applicant]
US 20020181523A1 · Pinneo et al. · 2002 [cited by applicant]
US 20030116767A1 · Kneissl et al. · 2003 [cited by applicant]
US 20040037340A1 · Yanagisawa · 2004 [cited by applicant]
US 20040052280A1 · Rice · 2004 [cited by applicant]
US 20040082112A1 · Stephens · 2004 [cited by applicant]
US 20040125459A1 · Tanitsu et al. · 2004 [cited by applicant]
US 20040258124A1 · Lissotschenko · 2004 [cited by applicant]
US 20040264521A1 · Ness et al. · 2004 [cited by applicant]
US 20050087849A1 · Morita et al. · 2005 [cited by applicant]
US 20050095755A1 · Nakata et al. · 2005 [cited by applicant]
US 20050232628A1 · Von Freyhold et al. · 2005 [cited by applicant]
US 20050254539A1 · Klimek · 2005 [cited by applicant]
US 20050286231A1 · Kishi · 2005 [cited by applicant]
US 20060011938A1 · Debray · 2006 [cited by applicant]
US 20060197100A1 · Shen · 2006 [cited by applicant]
US 20070116079A1 · Giniunas et al. · 2007 [cited by applicant]
US 20070273957A1 · Zalevsky · 2007 [cited by applicant]
US 20080089380A1 · Konig et al. · 2008 [cited by applicant]
US 20080123710A1 · Brick · 2008 [cited by applicant]
US 20080130223A1 · Nakamura · 2008 [cited by applicant]
US 20080213710A1 · Schultz · 2008 [cited by applicant]
US 20080259983A1 · Trococoli · 2008 [cited by applicant]
US 20090015185A1 · Yoshida · 2009 [cited by applicant]
US 20090016398A1 · Lorenzen et al. · 2009 [cited by applicant]
US 20090090932A1 · Bour et al. · 2009 [cited by applicant]
US 20090251697A1 · Cutillas et al. · 2009 [cited by applicant]
US 20100012188A1 · Garnett · 2010 [cited by applicant]
US 20110051759A1 · Telford · 2011 [cited by applicant]
US 20110103409A1 · Sipes · 2011 [cited by applicant]
US 20110241549A1 · Wootton · 2011 [cited by applicant]
US 20110280269A1 · Ghang-Hasnain · 2011 [cited by applicant]
US 20120043875A1 · Seo · 2012 [cited by applicant]
US 20120114001A1 · Fang et al. · 2012 [cited by applicant]
US 20120138266A1 · Yamada et al. · 2012 [cited by applicant]
US 20120153254A1 · Mastro · 2012 [cited by applicant]
US 20120177074A1 · Liu · 2012 [cited by examiner]
US 20120252144A1 · Schroeder et al. · 2012 [cited by applicant]
US 20120287958A1 · Lell · 2012 [cited by applicant]
US 20130016752A1 · Lell · 2013 [cited by applicant]
US 20130259074A1 · Newman · 2013 [cited by applicant]
US 20130271959A1 · Woodgate · 2013 [cited by applicant]
US 20140014313A1 · Hong et al. · 2014 [cited by applicant]
US 20140084452A1 · Nagamatsu · 2014 [cited by applicant]
US 20140293554A1 · Shashkov · 2014 [cited by applicant]
US 20150063387A1 · Joseph et al. · 2015 [cited by applicant]
US 20150115288A1 · Tamada et al. · 2015 [cited by applicant]
US 20150162478A1 · Fafard · 2015 [cited by applicant]
US 20150207011A1 · Garnett · 2015 [cited by applicant]
US 20150207294A1 · Brick et al. · 2015 [cited by applicant]
US 20150255960A1 · Kanskar · 2015 [cited by applicant]
US 20160014878A1 · Kilhenny · 2016 [cited by applicant]
US 20160192473A1 · Kasashima · 2016 [cited by applicant]
US 20160366757A1 · Kobayashi · 2016 [cited by applicant]
US 20170051884A1 · Raring · 2017 [cited by applicant]
US 20170288367A1 · Taniguchi · 2017 [cited by applicant]
US 20170338194A1 · Gittemeier · 2017 [cited by applicant]
US 20170346255A1 · Liang et al. · 2017 [cited by applicant]
US 20180152000A1 · Crawford et al. · 2018 [cited by applicant]
US 20180254606A1 · McElhinney et al. · 2018 [cited by applicant]
US 20180261975A1 · Pavlov · 2018 [cited by applicant]
US 20180278012A1 · Morita et al. · 2018 [cited by applicant]
US 20180335582A1 · Ishige · 2018 [cited by applicant]
US 20180337513A1 · Crawford et al. · 2018 [cited by applicant]
US 20200027839A1 · Hino · 2020 [cited by applicant]
US 20200059067A1 · Helmrich · 2020 [cited by examiner]
US 20200075529A1 · Otsuka · 2020 [cited by applicant]
US 20220123527A1 · Danziger et al. · 2022 [cited by applicant]
CA 2208370 · 2005 [cited by applicant]
CN 206322997 · 2017 [cited by applicant]
DE 968430 · 1958 [cited by applicant]
DE 19518177 · 1996 [cited by applicant]
DE 10062579 · 2001 [cited by applicant]
DE 10258745 · 2004 [cited by applicant]
DE 102008040374 · 2010 [cited by applicant]
EP 1439618 · 2004 [cited by applicant]
EP 1452614 · 2004 [cited by applicant]
EP 1811617 · 2007 [cited by applicant]
EP 1887666 · 2008 [cited by applicant]
EP 2110903 · 2009 [cited by applicant]
EP 2305400 · 2011 [cited by applicant]
JP 2002111058 · 2002 [cited by applicant]
Search Report issued in related German Patent Application 10 2019 121 924.8, dated Apr. 25, 2024, with English translation, 16 pages. [cited by applicant]
European Official Action issued in application No. 18173282.7, dated Jun. 7, 2024 (8 pgs). [cited by applicant]
Crawford, et al., “Advancements of Ultra-High Peak Power Laser Diode Arrays”, Proc. Of SPIE, vol. 10514, 2018, 10 pages. [cited by applicant]
European Search Report issued in related European Patent Application 23159052.2, dated Jul. 14, 2023, 14 pages. [cited by applicant]
Feng, et al., “High efficient GaN-based laser diodes with tunnel junction”, Applied Physics Letters 103, AIP Publishing, LLC, 2013. [cited by applicant]
Israeli Official Action issued in Application No. 266697, dated Oct. 9, 2022, 4 pages. [cited by applicant]
Rieprich, et al., “Proceedings of SPIE—Assessment of factors regulating the thermal lens profile and lateral brightness in high power diode lasers”, SPIEL ASE, 2017. [cited by applicant]
Giri et al, “Influence of Hot Electron Scattering and Electron-Phonon Interactions on Thermal Boundary Conductance at Metal/Nonmetal Interfaces” Journal of Heat Transfer, vol. 136, dated Sep. 2014 (6 pgs). [cited by applicant]
Martin et al., “Thermal Behavior of Visible AlGaInP-GaInP Ridge Laser Diodes” IEEE Journal of Quantum Electronics, vol. 28, No. 11, dated Nov. 1992 (7 pgs). [cited by applicant]
Monachon , C., “Thermal Boundary Conductance Between Metals and Dielectrics” thesis for the graduation of Doctor of Science, Federal Institute of Technology in Lausanne, 2013 (251 pgs). [cited by applicant]
Nekorkin et al., “Nonlinear mode mixing in dual-wavelength semiconductor lasers with tunnel junctions”, Applied Physics Letters 90, 171106 (2007) (3 pgs). [cited by applicant]
Notice of Allowance issued in U.S. Appl. No. 15/601,820, dated Jun. 11, 2019 (8 pgs). [cited by applicant]
Rieprich et al., “Assessment of Factors Regulating the Thermal Lens Profile and Lateral Brightness in High Power Diode Lasers” Proc of SPIE, vol. 10085, No. 1008502-1, dated 2017 (10 pgs). [cited by applicant]
Zhang et al., “Thermal Transport Across Metal-Insulator Interface Via Electron-Phonon Interaction,” Journal of Physics Condensed Matter, dated Oct. 2013 (15 pgs). [cited by applicant]
Yonkee, B.P., et al., “Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact”, Optics Express, vol. 24, No. 7, pp. 7816-7822, Apr. 2016. [cited by applicant]
Young, Lee W., Authorized officer, International Searching Authority, Written Opinion of the International Searching Authority, International Patent Application Serial No. PCT/US06/47448, completion date: Oct. 30, 2008. [cited by applicant]
Young, Lee W., Authorized officer, International Searching Authority, International Search Report, International Patent Application Serial No. PCT/US06/47448, search date: Nov. 1, 2008. [cited by applicant]
Polyimide properties data sheet, www.mit.edu, Oct. 27, 2004 (Year 2004). [cited by applicant]
RO30000 Series Laminates, Rogers Corporation Data sheet (year 2020). [cited by applicant]
Sunstone, FR-4 PCB Material, Mar. 14, 2017 (Year 2017). [cited by applicant]
Chen et al., High-T Polymer Dec. 25, 2017 (Year 2017). [cited by applicant]
Robin K. Huang, Bien Chann, James Burgess, Michael Kaiman, Robert Overman, John D. Glenn, and Parviz Tayebati “Direct diode lasers with comparable beam quality to fiber, CO2, and solid state lasers”, Proc. SPIE 8241, Hi… [cited by applicant]