Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
There is provided a technique that includes: (a) forming a modified layer by modifying at least a portion of an oxide film of a substrate by performing, a predetermined number of times: (a1) supplying a fluorine-containing gas to the substrate including the oxide film; and (a2) supplying a first reducing gas to the substrate; and (b) supplying the fluorine-containing gas to the substrate after the modified layer is formed.
1 . A method of processing a substrate, comprising:
(a) forming a modified layer by modifying at least a portion of an oxide film of the substrate by performing, a predetermined number of times:
(a1) supplying a fluorine-containing gas to the substrate including the oxide film; and
(a2) supplying a first reducing gas to the substrate; and
(b) supplying the fluorine-containing gas to the substrate after the modified layer is formed,
wherein (a) and (b) are performed in a state where a temperature of the substrate is set at a first temperature, and
wherein the method further comprises:
(c) sublimating the modified layer by setting the temperature of the substrate to a second temperature equal to or higher than the first temperature;
(d) raising the temperature of the substrate from the second temperature to a third temperature;
(e) supplying a second reducing gas to the substrate in a state where the temperature of the substrate is set at the third temperature and (f) forming a predetermined element-containing film on the substrate by lowering the temperature of the substrate from the third temperature to a fourth temperature and supplying a gas containing a predetermined element to the substrate in a state where the temperature of the substrate is set at a fourth temperature wherein the fourth temperature is higher than the second temperature.
2 . The method of claim 1 , wherein in at least one selected from the group of (c) and (d), exhausting a space where the substrate is placed and supplying a purge gas to the space where the substrate is placed are performed alternately a predetermined number of times.
3 . The method of claim 1 , wherein (e) includes:
(e1) supplying the second reducing gas to the substrate in a state where a pressure of a space where the substrate is placed is set to a first pressure; and
(e2) supplying the second reducing gas to the substrate in a state where the pressure of the space where the substrate is placed is set to a second pressure higher than the first pressure.
4 . The method of claim 1 , wherein in at least one selected from the group of (c), (d), and (e), exhausting a space where the substrate is placed and supplying at least one selected from the group of an inert gas and the second reducing gas to the space where the substrate is placed are performed alternately a predetermined number of times.
5 . The method of claim 1 , wherein the predetermined element includes a semiconductor element or a metal element.
6 . The method of claim 1 , wherein the predetermined element includes Si.
7 . The method of claim 1 , wherein the predetermined element-containing film includes an epitaxial film.
8 . The method of claim 1 , wherein supplying the first reducing gas to the substrate is not performed after performing (b).
9 . The method of claim 1 , wherein the first reducing gas is a nitrogen- and hydrogen-containing gas.
10 . The method of claim 1 , wherein the first reducing gas includes at least one selected from the group of a NH 3 gas, a N 2 H 2 gas, a N 2 H 4 gas, and a N 3 H 8 gas.
11 . The method of claim 1 , wherein the second reducing gas is a nitrogen-free and hydrogen-containing gas.
12 . The method of claim 1 , wherein the second reducing gas includes at least one selected from the group of a H 2 gas and a D 2 gas.
13 . The method of claim 1 , wherein the fluorine-containing gas is a fluorine- and hydrogen-containing gas.
14 . The method of claim 1 , wherein the fluorine-containing gas includes at least one selected from the group of a F 2 gas, a ClF 3 gas, a ClF gas, a NF 3 gas, and a HF gas.
15 . The method of claim 1 , wherein a process condition in (b) is different from a process condition in (a1).
16 . The method of claim 1 , wherein at least one selected from the group of a supply time of the fluorine-containing gas, a supply flow rate of the fluorine-containing gas, a partial pressure of the fluorine-containing gas, a concentration of the fluorine-containing gas, and a pressure of a space where the substrate is placed is different in (b) and in (a1).
17 . A method of manufacturing a semiconductor device, comprising the method of claim 1 .
18 . The method of claim 3 , wherein the first pressure is equal to or higher than 1 Pa and equal to or less than 600 Pa, and the second pressure is equal to or higher than 700 Pa and equal to or less than 2000 Pa.
19 . The method of claim 1 , wherein the predetermined element-containing film includes an epitaxial Si film.