Semiconductor device comprising two-dimensional material and method of manufacturing the semiconductor device
A semiconductor device including a two-dimensional material and a method of manufacturing the same are provided. The semiconductor device may include a first two-dimensional material layer including a first two-dimensional semiconductor material; a plurality of second two-dimensional material layers connected to the first two-dimensional material layer, each having a thickness greater than that of the first two-dimensional material layer, and including a doped two-dimensional semiconductor material; and a plurality of electrodes on the plurality of second two-dimensional material layers.
1 . A semiconductor device comprising:
a first two-dimensional material layer including a two-dimensional semiconductor material;
a plurality of second two-dimensional material layers connected to the first two-dimensional material layer, each of the plurality of second two-dimensional material layers having a thickness greater than a thickness of the first two-dimensional material layer, and each of the plurality of second two-dimensional material layers including a doped two-dimensional semiconductor material; and
a plurality of electrodes on the plurality of second two-dimensional material layers.
2 . The semiconductor device of claim 1 , wherein
each of the first two-dimensional material layer and the plurality of second two-dimensional material layers include a transition metal dichalcogenide (TMD).
3 . The semiconductor device of claim 2 , wherein
the TMD comprises at least one of Mo, W, Nb, V, Ta, Ti, Zr, Hf, Tc, Re, Cu, Ga, In, Sn, Ge, and Pb, and
the TMD comprises at least one of S, Se, and Te.
4 . The semiconductor device of claim 1 , wherein the first two-dimensional material layer comprises one to three layers.
5 . The semiconductor device of claim 1 , wherein the plurality of second two-dimensional material layers each comprise four layers or more.
6 . The semiconductor device of claim 1 , wherein the plurality of second two-dimensional material layers each comprise four to ten layers.
7 . The semiconductor device of claim 1 , wherein the plurality of second two-dimensional material layers comprise a transition metal as a dopant.
8 . The semiconductor device of claim 1 , wherein the first two-dimensional material layer is between two adjacent second two-dimensional material layers among the plurality of second two-dimensional material layers.
9 . The semiconductor device of claim 1 , wherein
the first two-dimensional material layer comprises an n-type dopant or a p-type dopant.
10 . The semiconductor device of claim 1 , wherein
the two-dimensional semiconductor material in the first two-dimensional material layer is a same material in an entire portion of the first two-dimensional material layer,
each of the plurality of second two-dimensional material layers are the doped two-dimensional semiconductor material, and
each of the two-dimensional semiconductor material and the doped two-dimensional semiconductor material are a transition metal dichalcogenide (TMD).
11 . The semiconductor device of claim 1 ,
wherein the two-dimensional semiconductor material of the first two-dimensional material layer is undoped.