Electrostatic device
The present disclosure relates to semiconductor structures and, more particularly, to electrostatic devices and methods of manufacture. The structure includes: a device having a collector, an emitter, and a base; an isolation structure extending between the base and the collector; a high resistivity film over the isolation structure; and a silicide blocking layer partially covering the high resistivity film, the isolation structure and the collector.
1 . A structure comprises:
a device comprising a collector, an emitter, and a base;
an isolation structure extending between the base and the collector;
a high resistivity film over the isolation structure;
a silicide blocking layer partially covering the high resistivity film, the isolation structure and the collector; and
a P-drift region which surrounds the collector and a first deep trench isolation structure touching the P-drift region.
2 . The structure of claim 1 , wherein the collector and emitter comprise P+ diffusion regions and the base comprises an N-well.
3 . The structure of claim 1 , wherein the high resistivity film and the collector are connected by a plate.
4 . The structure of claim 3 , wherein the high resistivity film comprises a polysilicon material on the isolation structure.
5 . The structure of claim 1 , wherein the base and the emitter are connected with a base resistor.
6 . The structure of claim 1 , wherein the base is floating.
7 . The structure of claim 1 , wherein the isolation structure comprises a local oxidation of silicon.
8 . The structure of claim 1 , further comprising a second deep trench isolation structure comprising a lining material and filled polysilicon material.
9 . The structure of claim 8 , wherein the polysilicon material comprises P-doped polysilicon.
10 . The structure of claim 8 , wherein the second deep trench isolation structure extends to an underlying substrate beneath an N+ buried layer.
11 . A structure comprising:
a device comprising a collector, an emitter, and a base;
an isolation structure extending between the base and the collector;
a high resistivity film over the isolation structure;
a silicide blocking layer partially covering the high resistivity film, the isolation structure and the collector; and
an N-type drift region and a P+ buried layer under the N-type drift region, the N-type drift region and the P+ buried layer having a gap between sides filled with a semiconductor material, and the emitter spans the gap.
12 . A method comprises:
forming a device comprising a collector, an emitter, and a base;
forming an isolation structure extending between the base and the collector;
forming a high resistivity film over the isolation structure;
forming a silicide blocking layer partially covering the high resistivity film, the isolation structure and the collector; and
forming a P-drift region which surrounds the collector and a first deep trench isolation structure touching the P-drift region.