Photoresist underlayer and method of manufacturing a semiconductor device
View Patent ↗A method of manufacturing a semiconductor device includes forming a photoresist underlayer including a photoresist underlayer composition over a semiconductor substrate and forming a photoresist layer comprising a photoresist composition over the photoresist underlayer. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. The photoresist underlayer composition includes: a first polymer having one or more of pendant acid-labile groups and pendant epoxy groups, a second polymer having one or more crosslinking groups, an acid generator, a quencher or photodecomposable base, and a solvent. The photoresist underlayer composition includes 0 wt. % to 10 wt. % of the quencher or photodecomposable base based on a total weight of the first and second polymers.
1 . A photoresist underlayer composition, comprising:
a first polymer comprising pendant acid-labile groups including one or more structures selected from
a second polymer having one or more crosslinking groups;
an acid generator;
greater than 0 wt. % to 10 wt. % of a photodecomposable base based on a total weight of the first and second polymers; and
a solvent.
2 . The photoresist underlayer composition of claim 1 , wherein the acid generator is a photoacid generator.
3 . The photoresist underlayer composition of claim 1 , wherein the pendant acid-labile groups are greater than 5 wt. % to 50 wt. % of the first polymer.
4 . The photoresist underlayer composition of claim 1 , wherein the crosslinking groups are greater than 30 wt. % to 70 wt. % of the second polymer.
5 . The photoresist underlayer composition of claim 1 , wherein the first polymer further comprises pendant epoxy groups.
6 . The photoresist underlayer composition of claim 1 , wherein the pendant acid labile groups are connected to the first polymer by a connecting group selected from —S—, —P—, —P(O 2 )—, —C(═O)S—, —C(═O)O—, —O—, —N—, —C(═O)N—, —SO 2 O—, —SO 2 S—, —SO—, —SO 2 —, a carboxylic acid group, ether group, ketone group, ester group, 1-9 carbon aliphatic groups or aromatic groups, wherein the aliphatic or aromatic groups are unbranched, branched, cyclic, noncyclic, unsubstituted, or substituted with one or more halogens.
7 . The photoresist underlayer composition of claim 1 , wherein the pendant acid labile groups include one or more structures selected from
8 . The photoresist underlayer composition of claim 1 , wherein the pendant acid labile groups include at least one of the following structures:
9 . A photoresist underlayer composition, comprising:
a first polymer comprising pendant acid-labile groups including one or more structures selected from
a second polymer having one or more crosslinking groups;
an acid generator;
greater than 0 wt. % to 10 wt. % of a quencher or a photodecomposable base based on a total weight of the first and second polymers; and
a solvent,
wherein the quencher is one or more of
and the photodecomposable base is one or more compounds comprising a combination of an anion and a cation selected from:
10 . The photoresist underlayer composition of claim 9 , wherein the acid generator is a photoacid generator.
11 . The photoresist underlayer composition of claim 9 , wherein the pendant acid-labile groups are greater than 5 wt. % to 50 wt. % of the first polymer.
12 . The photoresist underlayer composition of claim 9 , wherein the crosslinking groups are greater than 30 wt. % to 70 wt. % of the second polymer.
13 . The photoresist underlayer composition of claim 9 , wherein the first polymer further comprises epoxy groups.
14 . The photoresist underlayer composition of claim 9 , wherein the acid labile groups are connected to the first polymer by a connecting group selected from —S—, —P—, —P(O 2 )—, —C(═O)S—, —C(═O)O—, —O—, —N—, —C(═O)N—, —SO 2 O—, —SO 2 S—, —SO—, —SO 2 —, a carboxylic acid group, ether group, ketone group, ester group, 1-9 carbon aliphatic groups or aromatic groups, wherein the aliphatic or aromatic groups are unbranched, branched, cyclic, noncyclic, unsubstituted, or substituted with one or more halogens.
15 . A photoresist underlayer composition, comprising:
a first polymer comprising pendant acid-labile groups including one or more structures selected from
a second polymer having one or more crosslinking groups;
an acid generator;
0.1 wt. % to 10 wt. % of a photodecomposable base based on a total weight of the first and second polymers; and
a solvent,
wherein the crosslinking groups are one or more of
wherein R1 is a connecting group selected from —S—, —P—, —P(O 2 )—, —C(═O)S—, —C(═O)O—, —O—, —N—, —C(═O)N—, —SO 2 O—, —SO 2 S—, —SO—, —SO 2 —, a carboxylic acid group, ether group, ketone group, ester group, 1-9 carbon aliphatic groups or aromatic groups, wherein the aliphatic or aromatic groups are unbranched, branched, cyclic, noncyclic, unsubstituted, or substituted with one or more halogens.
16 . The photoresist underlayer composition of claim 15 , wherein the acid generator is a photoacid generator comprising a combination of a cation and anion selected from:
17 . The photoresist underlayer composition of claim 15 , wherein the photoresist underlayer composition comprises 0.1 wt. % to 20 wt. % of the acid generator based on a weight of the acid generator and the first polymer.
18 . The photoresist underlayer composition of claim 15 , wherein the pendant acid-labile groups are greater than 5 wt. % to 50 wt. % of the first polymer.
19 . The photoresist underlayer composition of claim 15 , wherein the crosslinking groups are greater than 30 wt. % to 70 wt. % of the second polymer.
20 . The photoresist underlayer composition of claim 15 , wherein the first polymer further comprises pendant epoxy groups.