Semiconductor package and method of manufacturing the same
A semiconductor package includes: a substrate including a redistribution member having a first surface and a second surface, opposing each other, and including pad structures disposed on the first surface and a redistribution layer electrically connected to the pad structures, an interconnect chip disposed on the second surface of the redistribution member and including an interconnect circuit electrically connected to the redistribution layer, a via structure disposed around the interconnect chip and electrically connected to the redistribution layer, an encapsulant encapsulating at least a portion of each of the interconnect chip and the via structure, and bump structures disposed on the encapsulant; and a first chip structure and a second chip structure disposed on the first surface of the redistribution member and electrically connected to the pad structures.
1 . A semiconductor package comprising:
a substrate including
a redistribution member, wherein the redistribution member comprises a first surface and a second surface opposite of the first surface, pad structures disposed on the first surface, and a redistribution layer electrically connected to the pad structures,
an interconnect chip disposed on the second surface of the redistribution member and including an interconnect circuit electrically connected to the redistribution layer,
a via structure disposed around the interconnect chip and electrically connected to the redistribution layer,
an encapsulant encapsulating at least a portion of each of the interconnect chip and the via structure, and
bump structures disposed on the encapsulant; and
a first chip structure and a second chip structure disposed on the first surface of the redistribution member and electrically connected to the pad structures,
wherein the bump structures include a first bump structure, overlapping at least a portion of the interconnect chip in a first direction that is perpendicular to the second surface, and a second bump structure overlapping at least a portion of the via structure,
the first bump structure includes a first foil layer that is disposed on the encapsulant and includes a first plating layer disposed on the first foil layer, and
the second bump structure includes a second foil layer that is disposed on the encapsulant and includes a second plating layer disposed in an opening penetrating through the second foil layer to expose at least a portion of the via structure.
2 . The semiconductor package of claim 1 , wherein the first plating layer includes a first seed layer and a first metal layer contacting the first seed layer, wherein the first seed layer contacts the first foil layer.
3 . The semiconductor package of claim 1 , wherein the second plating layer includes a second seed layer and a second metal layer contacting the second seed layer, wherein the second seed layer contacts the second foil layer and extends along an inside of the opening.
4 . A semiconductor package comprising:
a substrate including
a redistribution member, wherein the redistribution member comprises a first surface and a second surface opposite of the first surface, pad structures disposed on the first surface, and a redistribution layer electrically connected to the pad structures,
an interconnect chip disposed on the second surface of the redistribution member and including an interconnect circuit electrically connected to the redistribution layer,
a via structure disposed around the interconnect chip and electrically connected to the redistribution layer,
an encapsulant encapsulating at least a portion of each of the interconnect chip and the via structure, and
bump structures disposed on the encapsulant; and
a first chip structure and a second chip structure disposed on the first surface of the redistribution member and electrically connected to the pad structures,
wherein the bump structures include a first bump structure, overlapping at least a portion of the interconnect chip in a first direction that is perpendicular to the second surface, and a second bump structure overlapping at least a portion of the via structure,
the first bump structure includes a first foil layer that is disposed on the encapsulant and includes a first plating layer disposed on the first foil layer, and
the second bump structure includes a second foil layer that is disposed on the encapsulant and includes a second plating layer disposed in an opening penetrating through the second foil layer to expose at least a portion of the via structure,
wherein the redistribution member includes a dielectric layer providing the first surface and the second surface, and
wherein a thickness of the encapsulant that covers the via structure ranges from about 80% to about 120% of a thickness of the dielectric layer.
5 . The semiconductor package of claim 4 , wherein the dielectric layer includes a photosensitive resin.
6 . The semiconductor package of claim 4 , wherein the thickness of the dielectric layer ranges from about 20 μm to about 30 μm.
7 . The semiconductor package of claim 1 , wherein the first and second chip structures are electrically connected to each other through the interconnect circuit.
8 . The semiconductor package of claim 1 , wherein the pad structures include first pad structures that are electrically connected to the interconnect circuit,
wherein the pad structures include second pad structures electrically connected to the via structure, and
wherein the first and second chip structures are electrically connected to each other through the first pad structures.
9 . The semiconductor package of claim 8 , wherein a first distance between adjacent first pad structures is shorter than a second distance between adjacent second pad structures.
10 . The semiconductor package of claim 9 , wherein the first distance ranges from about 10 μm to about 60 μm, and
the second distance ranges from about 60 μm to about 100 μm.
11 . The semiconductor package of claim 8 , wherein a width of the first pad structures along a second direction that is parallel to the first surface is substantially a same width as the second pad structures along the second direction.
12 . The semiconductor package of claim 1 , wherein the pad structures include a pad portion that is disposed on the first surface, and wherein the pad structures include a surface layer disposed on the pad portion.
13 . The semiconductor package of claim 1 , comprising:
a connection member including the via structure and an insulating layer that surrounds the via structure, wherein the connection member includes a through-hole in which the interconnect chip is accommodated.
14 . A semiconductor package comprising:
a substrate including
a redistribution member, wherein the redistribution member comprises a first surface and a second surface opposite of the first surface, and a redistribution layer,
an interconnect chip disposed on the second surface of the redistribution member and including an interconnect circuit electrically connected to the redistribution layer,
a via structure disposed around the interconnect chip and electrically connected to the redistribution layer,
an encapsulant encapsulating at least a portion of each of the interconnect chip and the via structure, and
bump structures disposed on the encapsulant; and
a first chip structure and a second chip structure disposed on the first surface of the redistribution member and electrically connected to the redistribution layer,
wherein the bump structures include a foil layer that contacts the encapsulant, a seed layer that contacts the foil layer, and a metal layer that contacts the seed layer, and
the foil layer, the seed layer, and the metal layer include a same material.
15 . The semiconductor package of claim 14 , wherein
the foil layer, the seed layer, and the metal layer include copper (Cu) and a copper (Cu) alloy.