Method for fabricating display apparatus comprising forming conductive layer electrically connected to cathodes of light-emitting elements
A novel method for fabricating a display apparatus is provided. An anode is formed over an insulating layer, an EL layer is formed over the anode, and a cathode is formed over the EL layer. A plurality of light-emitting elements are formed without provision of a partition by selectively removing parts of the anode, the EL layer, and the cathode. A conductive layer having a light-transmitting property is formed to cover the plurality of light-emitting elements. The cathodes of the plurality of light-emitting elements are electrically connected to the conductive layer.
1 . A method for fabricating a display apparatus, comprising:
a step of forming an anode over an insulating layer;
a step of forming an EL layer over the anode;
a step of forming a cathode over the EL layer;
a step of selectively removing parts of the anode, the EL layer, and the cathode to expose a top surface of the insulating layer and to form a plurality of light-emitting elements; and
a step of forming a conductive layer covering the plurality of light-emitting elements,
wherein the cathode of each of the plurality of light-emitting elements is electrically connected to the conductive layer, and
wherein the conductive layer has a light-transmitting property.
2 . The method for fabricating the display apparatus according to claim 1 , further comprising:
a step of forming a plurality of transistors over a substrate; and
a step of forming the insulating layer over the plurality of transistors,
wherein the insulating layer comprises a surface of the insulating layer serving as a formation surface with reduced unevenness.
3 . The method for fabricating the display apparatus according to claim 2 ,
wherein the transistor comprises an oxide semiconductor.
4 . The method for fabricating the display apparatus according to claim 3 ,
wherein the oxide semiconductor comprises at least one of indium and zinc.
5 . The method for fabricating the display apparatus according to claim 1 ,
wherein an interval between two of the light-emitting elements adjacent to each other is less than or equal to 10 μm.
6 . The method for fabricating the display apparatus according to claim 1 ,
wherein each of the plurality of light-emitting elements is of a top-emission type.
7 . The method for fabricating the display apparatus according to claim 1 ,
wherein the parts of the EL layer are etched by a dry etching method in the step of selectively removing the parts of the EL layer.
8 . The method for fabricating the display apparatus according to claim 1 , wherein side surfaces of the anode, the EL layer, and the cathode in each of the plurality of light-emitting elements are aligned or substantially aligned with each other.
9 . A method for fabricating a display apparatus, comprising:
a step of forming an anode over an insulating layer;
a step of forming an EL layer over the anode;
a step of forming a cathode over the EL layer;
a step of selectively removing parts of the anode, the EL layer, and the cathode to expose a top surface of the insulating layer and to form a plurality of light-emitting elements; and
a step of forming a conductive layer over the plurality of light-emitting elements,
wherein the parts of the anode, the EL layer, and the cathode are collectively removed using a resist mask, and
wherein at least in two of the plurality of light-emitting elements, the cathodes of the light-emitting elements adjacent to each other are electrically connected to the conductive layer.
10 . The method for fabricating the display apparatus according to claim 9 , further comprising:
a step of forming a plurality of transistors over a substrate; and
a step of forming the insulating layer over the plurality of transistors,
wherein the insulating layer comprises a surface of the insulating layer serving as a formation surface with reduced unevenness.
11 . The method for fabricating the display apparatus according to claim 10 ,
wherein the transistor comprises an oxide semiconductor.
12 . The method for fabricating the display apparatus according to claim 11 ,
wherein the oxide semiconductor comprises at least one of indium and zinc.
13 . The method for fabricating the display apparatus according to claim 9 ,
wherein an interval between the two of the light-emitting elements adjacent to each other is less than or equal to 10 μm.
14 . The method for fabricating the display apparatus according to claim 9 ,
wherein each of the plurality of light-emitting elements is of a top-emission type.
15 . The method for fabricating the display apparatus according to claim 9 ,
wherein the parts of the EL layer are etched by a dry etching method in the step of selectively removing the parts of the EL layer.
16 . The method for fabricating the display apparatus according to claim 9 , wherein side surfaces of the anode, the EL layer, and the cathode in each of the plurality of light-emitting elements are aligned or substantially aligned with each other.