Flash memory array with a top gate line dynamically coupled to a word line
View Patent ↗Systems and methods are disclosed including memory cells arranged in sectors. In one exemplary implementation, each memory cell may include a top gate, a source, a top gate line coupling memory cells in a sector, and a word line coupling memory cells together. Moreover, the top gate line may be dynamically coupled to the word line. Other exemplary implementations may relate to drivers for driving the word line and/or top gate line, multilevel memory cell, and/or floating gate line features.
1. A memory system comprising:
a plurality of memory cells arranged in sectors, each memory cell including a top gate and a source, a top gate line coupling memory cells in a sector, and a word line coupling memory cells together;
wherein the top gate line is biased by a capacitance such that the top gate line is dynamically coupled to the word line.
2. The memory system of claim 1 wherein the memory cells are multilevel memory cells.
3. The memory system of claim 1 further comprising a first weak driver for driving the word line, and a second weak driver for driving the top gate line.
4. The memory system of claim 1 wherein the top gate line is floating.
5. The system of claim 4 further comprising a weak driver for driving the top gate line.
6. The system of claim 4 further comprising:
an enable transistor that controls the top gate line, wherein the enable transistor is configured to be turned off after the top gate line reaches a bias level so that the top gate line floats and follows voltages on the word line.
7. The system of claim 4 wherein the memory cells are configured to be programmed via one terminal of said memory cell or bias thereof being fixed or incremental.
8. The system of claim 7 wherein the memory cells are further configured to also be programmed via other terminals of said memory cell or biases thereof being fixed or incremental.
9. The system of claim 1 further comprising a weak driver for driving the top gate line.
10. The system of claim 1 further comprising:
an enable transistor that controls the top gate line, wherein the enable transistor is configured to be turned off after the top gate line reaches a bias level so that the top gate line floats and follows voltages on the word line.
11. The system of claim 1 wherein the memory cells are configured to be programmed via one terminal of said memory cell or bias thereof being fixed or incremental.
12. The system of claim 11 wherein the memory cells are configured to be programmed via other terminals of said memory cell or biases being fixed or incremental.
13. A memory system comprising:
a plurality of memory cells arranged in sectors, each memory cell including a top gate and a source, a top gate line coupling memory cells in a sector, and a word line coupling memory cells together; and
an enable transistor that controls the top gate line, the enable transistor being configured to be turned off after the top gate line reaches a bias level, wherein the top gate line is coupled to the word line such that the top gate line floats and follows voltages on the word line.
14. The system of claim 13 wherein the memory cells are multilevel memory cells.
15. The system of claim 13 further comprising a first weak driver for driving the word line, and a second weak driver for driving the top gate line.
16. The system of claim 13 wherein the top gate line is floating.
17. The system of claim 16 wherein the memory cells are multilevel memory cells.
18. The system of claim 16 further comprising a first weak driver for driving the word line, and a second weak driver for driving the top gate line.
19. The system of claim 16 further comprising a weak driver for driving the top gate line.
20. The system of claim 16 wherein the memory cells are configured to be programmed via one terminal of said memory cell or bias thereof being fixed or incremental.
21. The system of claim 20 wherein the memory cells are further configured to also be programmed via other terminals of said memory cell or biases thereof being fixed or incremental.
22. The system of claim 13 further comprising a weak driver for driving the top gate line.
23. The system of claim 13 wherein the memory cells are configured to be programmed via one terminal of said memory cell or bias thereof being fixed or incremental.
24. The system of claim 23 wherein the memory cells are further configured to also be programmed via other terminals of said memory cell or biases thereof being fixed or incremental.