Flash memory system using complementary voltage supplies
A non-volatile memory device comprises a semiconductor substrate of a first conductivity type. An array of non-volatile memory cells is located in the semiconductor substrate and arranged in a plurality of rows and columns. Each memory cell comprises a first region on a surface of the semiconductor substrate of a second conductivity type, and a second region on the surface of the semiconductor substrate of the second conductivity type. A channel region is between the first region and the second region. A word line overlies a first portion of the channel region and is insulated therefrom, and adjacent to the first region and having little or no overlap with the first region. A floating gate overlies a second portion of the channel region, is adjacent to the first portion, and is insulated therefrom and is adjacent to the second region. A coupling gate overlies the floating gate. A bit line is connected to the first region. During the operations of program, read, or erase, a negative voltage can be applied to the word lines and/or coupling gates of the selected or unselected memory cells.
1. A decoder circuit for use with a coupling gate of a flash memory cell, comprising:
a first circuit for providing a bias voltage to the coupling gate when the flash memory cell is selected for a read operation;
a second circuit for providing a positive voltage to the coupling gate when the flash memory cell is selected for a program operation;
a third circuit for providing a voltage to the coupling gate when the flash memory cell is selected for an erase operation; and
a fourth circuit for providing an inhibit voltage to the coupling gate when the flash memory cell is unselected.
2. The circuit of claim 1 , wherein the decoder circuit does not contain cascoding transistors.
3. The circuit of claim 1 , wherein the third circuit provides a negative voltage for the coupling gate.
4. A decoder circuit for use with a flash memory cell, comprising:
an erase gate decoder circuit for use with an erase gate of the flash memory cell;
a source line decoder circuit for use with a source line of the flash memory cell;
a coupling gate decoder circuit for use with a coupling gate of the flash memory cell, the coupling gate decoder circuit comprising:
a first circuit for providing a bias voltage to the coupling gate when the flash memory cell is selected for a read operation;
a second circuit for providing a positive voltage to the coupling gate when the flash memory cell is selected for a program operation;
a third circuit for providing a voltage to the coupling gate when the flash memory cell is selected for an erase operation; and
a fourth circuit for providing an inhibit voltage to the coupling gate when the flash memory cell is unselected.
5. The circuit of claim 4 , wherein the coupling date decoder circuit does not contain cascoding transistors.
6. The circuit of claim 4 , wherein the third circuit providing a negative voltage for the coupling gate.