IP Library › Granted Patent US 9,568,524
Granted Patent B2
US 9,568,524 · App. 13/904,706 · Granted Feb 14, 2017

Multi-state capacitive button

Inventors: Ingar Hanssen (Trondheim, NO); Arild Rødland (Trondheim, NO); Rian Whelan (Drogheda, IE)
Assignee: Atmel Corporation
G01R27/2605H03K17/955H03K17/9622H03K2217/96054H03K2217/96077H03K2217/960775
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,568,524
App. No.
13/904,706
Granted
Feb 14, 2017
Kind
B2
Abstract

In one embodiment, an apparatus includes a sensor, a button, a conductor between the button and the sensor, and a controller connected to the sensor. The sensor includes first and second electrode tracks. The button includes an electrically isolating material and is configured to capacitively couple with an object. The conductor is configured to capacitively couple with the sensor and form a galvanic connection between the first and second electrode tracks when the conductor comes into contact with the sensor. The controller is configured to measure a value associated with an amount of capacitive coupling between the conductor and the sensor and to detect first and second states of the button based on the value, the first state indicating that the object is in contact with the button and that the conductor is not contacting the sensor, and the second state indicating that the conductor is not contacting the sensor.

Claims (53)

1. An apparatus comprising:

a sensor comprising first and second electrode tracks;

a button comprising an electrically isolating material, the button configured to capacitively couple with an object;

a conductor between the button and the sensor, the conductor configured to:

capacitively couple with a capacitive node formed by the first and second electrode tracks of the sensor; and

form a galvanic connection between the first and second electrode tracks when the conductor comes into contact with the sensor; and

a controller connected to the sensor and configured to:

measure a value of a capacitance at the capacitive node formed by the first and second electrode tracks of the sensor, the capacitance at the capacitive node reflecting an amount of capacitive coupling between the conductor and the capacitive node formed by the first and second electrode tracks of the sensor; and

detect first and second states of the button based on the value, the first state indicating that the object is in contact with the button and that the conductor has not come into contact with the sensor, and the second state indicating that the conductor has come into contact with the sensor.

2. The apparatus of claim 1 , wherein the amount of capacitive coupling between the conductor and the sensor is based at least on the following:

an amount of capacitive coupling between the electrically isolating material and the object;

an amount of capacitive coupling between the electrically isolating material and the conductor; and

a distance between the conductor and the sensor.

3. The apparatus of claim 1 , wherein the controller is further configured to detect a third state of the button based on the value, the third state indicating that the object is near the button but is not in contact with the button.

4. The apparatus of claim 1 , further comprising a cover, the cover comprising a channel configured to receive the button.

5. The apparatus of claim 4 , wherein the cover further comprises a metal.

6. The apparatus of claim 1 , wherein the electrically isolating material has a dielectric constant greater than 3.

7. The apparatus of claim 1 , wherein the controller is configured to measure the value using mutual capacitance sensing.

8. The apparatus of claim 7 , wherein the controller is further configured to measure a second value in response to detecting the second state, the second value not being measured by mutual capacitance sensing or self-capacitance sensing.

9. The apparatus of claim 1 , wherein the conductor is integrally formed with the button.

10. A method comprising:

applying, by a controller, voltage to a sensor, the sensor proximate to a conductor that is capable of being depressed relative to the sensor, the conductor located between a button and the sensor, the sensor comprising first and second electrode tracks, the conductor configured to capacitively couple with a capacitive node formed by the first and second electrode tracks of the sensor;

measuring, by the controller, a value of a capacitance at the capacitive node formed by the first and second electrode tracks of the sensor, the capacitance at the capacitive node reflecting an amount of capacitive coupling between the conductor and the capacitive node formed by the first and second electrode tracks of the sensor, the amount of capacitive coupling between the button and the capacitive node formed by the first and second electrode tracks of the sensor based at least on the following:

an amount of capacitive coupling between an electrically isolating material of the button and the object;

an amount of capacitive coupling between the electrically isolating material and the conductor; and

a distance between the conductor and the sensor; and

detecting, by the controller based on the value, first and second states of the button based on the value, the first state indicating that the object is in contact with the button and that the conductor has not come into contact with the sensor, and the second state indicating that the conductor has come into contact with the sensor.

11. The method of claim 10 , further comprising detecting a third state of the button based on the value, the third state indicating that the object is near the button but is not in contact with the button.

12. The method of claim 11 , further comprising detecting a fourth state of the button based on the value, the fourth state indicating that the conductor is in contact with the sensor and that the object is not in contact with the button.

13. The method of claim 10 , wherein:

each of the plurality of states is associated with a value range; and

determining the state of the button comprises determining the value range in which the measured value falls.

14. The method of claim 10 , wherein:

applying voltage to the sensor comprises applying voltage to a first electrode track of the sensor; and

measuring the value comprises measuring a capacitance associated with a second electrode track of the sensor.

15. The method of claim 10 , wherein:

applying voltage to the sensor comprises applying voltage to a plurality of electrode tracks of the sensor substantially simultaneously; and

measuring the value comprises measuring a capacitance associated with capacitive coupling experienced by the plurality of electrode tracks.

16. The method of claim 10 , wherein:

applying voltage to the sensor comprises applying voltage to a first plurality of substantially parallel electrode tracks of the sensor substantially simultaneously; and

measuring the value comprises measuring a capacitance associated with capacitive coupling experienced by a second plurality of electrode tracks of the sensor.

17. The method of claim 16 , wherein the first plurality of electrode tracks is substantially parallel to the second plurality of electrode tracks.

18. The method of claim 16 , wherein the first plurality of electrode tracks is substantially perpendicular to the second plurality of electrode tracks.

19. The method of claim 10 , further comprising measuring, by the controller, a second value in response to detecting the second state, the second value not being measured by mutual capacitance sensing or self-capacitance sensing.

20. A controller comprising:

a memory; and

circuitry configured to:

apply voltage to a sensor, the sensor proximate to a conductor that is capable of being depressed relative to the sensor, the conductor located between a button and the sensor, the sensor comprising first and second electrode tracks, the conductor configured to capacitively couple with a capacitive node formed by the first and second electrode tracks of the sensor;

measure a value of a capacitance at the capacitive node formed by the first and second electrode tracks of the sensor, the capacitance at the capacitive node reflecting an amount of capacitive coupling between the conductor and the capacitive node formed by the first and second electrode tracks of the sensor, the amount of capacitive coupling between the button and the capacitive node formed by the first and second electrode tracks of the sensor based at least on the following:

an amount of capacitive coupling between an electrically isolating material of the button and the object;

an amount of capacitive coupling between the electrically isolating material and the conductor; and

a distance between the conductor and the sensor; and

detect first, second, and third states of the button based on the value, the first state indicating that the object is in contact with the button and that the conductor has not come into contact with the sensor, the second state indicating that the conductor has come into contact with the sensor, and the third state indicating that the object is near the button but is not in contact with the button.

Assignments (19)
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0001 →
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: ATMEL CORPORATION
Reel/Frame 059262/0105 →
RELEASE OF SECURITY INTEREST Recorded Feb 25, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059333/0222 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
SECURITY INTEREST Recorded Sep 18, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 047103/0206 →
SECURITY INTEREST Recorded Jun 25, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 046426/0001 →
SECURITY INTEREST Recorded Feb 10, 2017
From: ATMEL CORPORATION
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 041715/0747 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT COLLATERAL Recorded Apr 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: ATMEL CORPORATION
Reel/Frame 038376/0001 →
PATENT SECURITY AGREEMENT Recorded Jan 3, 2014
From: ATMEL CORPORATION
To: MORGAN STANLEY SENIOR FUNDING, INC. AS ADMINISTRATIVE AGENT
Reel/Frame 031912/0173 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2013
From: ATMEL TECHNOLOGIES IRELAND LIMITED
To: ATMEL CORPORATION
Reel/Frame 030551/0062 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 29, 2013
From: HANSSEN, INGAR; RODLAND, ARILD
To: ATMEL CORPORATION
Reel/Frame 030506/0149 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 29, 2013
From: WHELAN, RIAN
To: ATMEL TECHNOLOGIES IRELAND LIMITED
Reel/Frame 030506/0286 →
Continuity (1)
Related Publication 20140354305A1 · Dec 4, 2014