Method and sample for radiation microscopy including a particle beam channel formed in the sample source
View Patent ↗A method and sample for radiation microscopy include a sample source that includes an area of interest, an outer side of a sample formed in the sample source adjacent to the area of interest, an inner side of the sample formed inside the sample source wherein at least a portion of the area of interest is included between the inner side of the sample and the outer side, and a particle beam channel formed inside the sample source for conducting a particle beam to or from the inner side of the sample.
1. A method comprising steps of:
providing a sample source that includes an area of interest;
forming an outer side of a sample in the sample source adjacent to the area of interest;
forming an inner side of the sample inside the sample source, the sample including at least a portion of the area of interest between the inner side of the sample and the outer side;
forming a particle beam channel inside the sample source for conducting a particle beam to or from the inner side of the sample; and
forming a coating on the particle beam channel for one of generating a beam of secondary electrons and reflecting the particle beam.
2. The method of claim 1 further comprising forming the coating comprising one of platinum, silver, and gold.
3. The method of claim 1 further comprising including a portion of a semiconductor wafer in the sample source.
4. The method of claim 1 further comprising including in the sample one of a polysilicon gate of a transistor, a via, an oxide layer, and a polysilicon layer.
5. The method of claim 1 further comprising forming the particle beam channel to conduct a beam comprising electrons or photons.
6. The method of claim 1 further comprising forming the outer side from zero to about 20 microns from the area of interest.
7. The method of claim 1 further comprising forming the particle beam channel including an angular surface, the angular surface formed at an acute angle adjacent to the inner side.
8. An apparatus comprising:
a sample source that includes an area of interest; an outer side of a sample formed in the sample source adjacent to the area of interest;
an inner side of the sample formed inside the sample source, the sample including at least a portion of the area of interest between the inner side of the sample and the outer side;
a particle beam channel formed inside the sample source for conducting a particle beam to or from the inner side of the sample; and
a coating formed on the particle beam channel for one of generating a beam of secondary electrons and reflecting the particle beam.
9. The sample of claim 8 , the coating comprising one of platinum, silver, and gold.
10. The sample of claim 8 , the sample source comprising a portion of a semiconductor wafer.
11. The sample of claim 8 , the sample comprising one of a polysilicon gate, a via, an oxide layer, and a polysilicon layer.
12. The sample of claim 8 , the outer side formed from zero to about 20 microns from the area of interest.
13. The sample of claim 8 , the particle beam channel formed to conduct a beam comprising electrons or photons.
14. The apparatus of claim 8 , the particle beam channel comprising an angular surface, the angular surface formed at an acute angle adjacent to the inner side.