Semiconductor device and method of forming a fan-in package-on-package structure using through silicon vias
A semiconductor device is made by providing a first semiconductor die having a plurality of contact pads formed over a first surface of the first semiconductor die and having a plurality of through-silicon vias (TSVs) formed within the first semiconductor die. A second semiconductor die is mounted to the first surface of the first semiconductor die using a plurality of solder bumps. At least one of the solder bumps is in electrical communication with the TSVs in the first semiconductor die. The second semiconductor die is mounted to a printed circuit board (PCB) using an adhesive material. A plurality of solder bumps is formed to connect the contact pads of the first semiconductor die to the PCB. An encapsulant is deposited over the first semiconductor die and the second semiconductor die. An interconnect structure is formed over a back surface of the PCB.
1. A method of making a semiconductor device, comprising:
providing a first semiconductor die including a plurality of conductive vias formed through the first semiconductor die and a build-up interconnect structure formed across an active surface of the first semiconductor die;
disposing a second semiconductor die over the first semiconductor die to form a first semiconductor package, wherein the second semiconductor die includes a plurality of first bumps in direct contact with the build-up interconnect structure;
forming a plurality of second bumps in direct contact with the build-up interconnect structure outside a footprint of the second semiconductor die after forming the first semiconductor package;
providing a substrate including a plurality of first conductive layers formed through the substrate and on a planar first surface of the substrate;
disposing the first semiconductor package over the planar first surface of the substrate with the second bumps in direct contact with the first conductive layers on the planar first surface of the substrate;
disposing a discrete component between the first semiconductor package and substrate;
depositing an encapsulant around the first semiconductor die and between the first semiconductor package and substrate; and
disposing a second semiconductor package over the first semiconductor die opposite the substrate, wherein the second semiconductor package includes a plurality of third bumps in direct contact with the conductive vias.
2. The method of claim 1 , wherein the build-up interconnect structure includes:
forming an insulating layer over the active surface of the first semiconductor die; and
forming a second conductive layer over the insulating layer.
3. The method of claim 1 , further including depositing the encapsulant between the first semiconductor die and second semiconductor die.
4. A method of making a semiconductor device, comprising:
providing a first semiconductor die including a plurality of conductive vias formed through the first semiconductor die and a build-up interconnect structure formed across an active surface of the first semiconductor die;
disposing a first semiconductor package over the first semiconductor die to form a second semiconductor package;
forming a plurality of first bumps in direct contact with the build-up interconnect structure outside a footprint of the first semiconductor package after forming the second semiconductor package;
providing a substrate including a plurality of first conductive layers formed through the substrate and on a planar first surface of the substrate;
disposing the second semiconductor package over the planar first surface of the substrate with the first bumps in direct contact with the first conductive layers on the planar first surface of the substrate;
depositing an encapsulant around the first semiconductor die and between the second semiconductor package and substrate; and
disposing a third semiconductor package over the first semiconductor die opposite the substrate, wherein the third semiconductor package includes a plurality of second bumps in direct contact with the conductive vias.
5. The method of claim 4 , further including disposing a discrete component between the second semiconductor package and substrate.
6. The method of claim 4 , wherein the build-up interconnect structure includes:
forming an insulating layer over the active surface of the first semiconductor die; and
forming a second conductive layer over the insulating layer.
7. The method of claim 4 , further including depositing the encapsulant between the first semiconductor die and first semiconductor package.
8. The method of claim 4 , wherein the first semiconductor package includes a second semiconductor die.
9. The method of claim 8 , further including forming an interconnect structure between the second semiconductor die and first semiconductor die.
10. The method of claim 8 , further including forming an interconnect structure between the second semiconductor die and substrate.
11. A method of making a semiconductor device, comprising:
providing a first semiconductor die including a plurality of conductive vias formed through the first semiconductor die and a build-up interconnect structure formed across an active surface of the first semiconductor die;
disposing a first semiconductor package over the first semiconductor die to form a second semiconductor package;
disposing the second semiconductor package over a first surface of a substrate;
depositing an encapsulant around the first semiconductor die and between first semiconductor die and the first semiconductor package; and
disposing a third semiconductor package over the second semiconductor package opposite the substrate, wherein the third semiconductor package includes a plurality of first bumps in direct contact with the conductive vias.
12. The method of claim 11 , further including forming a plurality of second bumps in direct contact with the build-up interconnect structure outside a footprint of the first semiconductor package after forming the second semiconductor package.
13. The method of claim 11 , further including disposing a discrete component between the second semiconductor package and substrate.
14. The method of claim 11 , wherein the first semiconductor package includes a second semiconductor die.
15. The method of claim 14 , further including forming an interconnect structure between the second semiconductor die and first semiconductor die.
16. The method of claim 14 , further including forming an interconnect structure between the second semiconductor die and substrate.
17. A method of making a semiconductor device, comprising:
providing a first semiconductor die including a plurality of conductive vias formed through the first semiconductor die and a build-up interconnect structure formed across an active surface of the first semiconductor die;
disposing a first semiconductor package over the first semiconductor die to form a second semiconductor package;
forming a plurality of first bumps in direct contact with the build-up interconnect structure outside a footprint of the first semiconductor package after forming the second semiconductor package;
depositing an encapsulant around the first semiconductor die; and
disposing a third semiconductor package over the second semiconductor package, wherein the third semiconductor package includes a plurality of second bumps in direct contact with the conductive vias.
18. The method of claim 17 , further including:
providing a substrate including a plurality of conductive layers formed through the substrate and on a first surface of the substrate;
disposing the first semiconductor package over the first surface of the substrate with the second bumps in direct contact with the conductive layers on the first surface of the substrate; and
depositing the encapsulant between the second semiconductor package and substrate.
19. The method of claim 18 , further including disposing a discrete component between the second semiconductor package and substrate.
20. The method of claim 17 , further including disposing depositing the encapsulant between the first semiconductor die and first semiconductor package.
21. The method of claim 17 , wherein the build-up interconnect structure includes:
forming an insulating layer over the active surface of the first semiconductor die; and
forming a conductive layer over the insulating layer.
22. The method of claim 17 , wherein the first semiconductor package includes a second semiconductor die.
23. The method of claim 22 , further including forming an interconnect structure between the second semiconductor die and first semiconductor die.
24. The method of claim 22 , further including forming an interconnect structure between the second semiconductor die and substrate.