Miniaturized wide-band baluns for RF applications
View Patent ↗A wide-band balun device includes a first metallization deposited over a substrate and oriented in a first coil. The first coil extends horizontally across the substrate while maintaining a substantially flat vertical profile. A second metallization is deposited over the substrate and oriented in a second coil. The second coil is magnetically coupled to the first coil and a portion of the second coil oriented interiorly of the first coil. A third metallization is deposited over the substrate and oriented in a third coil. The third coil is magnetically coupled to the first and second coils. A first portion of the third coil is oriented interiorly of the second coil. The third coil has a balanced port connected to the third coil between second and third portions of the third coil.
1. A wide-band balun device, comprising:
a first coil formed at a first level over a substrate in a wound configuration extending horizontally across the substrate;
a second coil formed at the first level over the substrate in a wound configuration adjacent to the first coil, the second coil being magnetically coupled to the first coil; and
a third coil formed at the first level over the substrate in a wound configuration adjacent to the first coil and second coil, the third coil being magnetically coupled to the first coil and second coil, wherein the first, second, and third coils have a substantially flat vertical profile with respect to each other and are arranged over the substrate as a single integrated structure.
2. The wide-band balun device of claim 1 , wherein the substrate is made with silicon, glass, or ceramic material for structural support.
3. The wide-band balun device of claim 1 , wherein the first, second, and third coils have a rectangular cross-section.
4. The wide-band balun device of claim 1 , wherein the first, second, and third coils include copper or a copper alloy material.
5. The wide-band balun device of claim 1 , further including a semiconductor device containing the first, second, and third coils.
6. A balun device, comprising:
a first coil formed at a first level over a substrate in a wound configuration extending horizontally across the substrate;
a second coil formed at the first level over the substrate in a wound configuration adjacent to the first coil, the second coil being magnetically coupled to the first coil; and
a third coil formed over the substrate in a wound configuration adjacent to the first coil and second coil, the third coil being magnetically coupled to the first coil and second coil;
wherein the first, second, and third coils have a substantially flat vertical profile with respect to each other and are arranged over the substrate as a single integrated structure.
7. The balun device of claim 6 , further including a semiconductor device containing the substrate with the first, second, and third coils organized over the substrate as a coil structure in a planar side by side group of three coils.
8. The balun device of claim 6 , wherein the substrate is made with silicon, glass, or ceramic material for structural support.
9. The balun device of claim 6 , wherein the first, second, and third coils have a rectangular cross-section or round cross-section.
10. A balun for a semiconductor device, comprising:
a first metallization formed over a substrate and patterned as a first coil extending horizontally across the substrate;
a second metallization formed over the substrate and patterned as a second coil adjacent to the first coil, the second metallization being magnetically coupled to the first metallization; and
a third metallization formed over the substrate and patterned as a third coil adjacent to the first coil and second coil, the third metallization being magnetically coupled to the first metallization and second metallization;
wherein the first and second metallizations have a substantially flat vertical profile with respect to each other and are arranged over the substrate as a single integrated structure.
11. The balun of claim 10 , wherein the first, second, and third metallizations are arranged over the substrate as the single integrated structure.
12. The balun of claim 10 , wherein the substrate is made with silicon, glass, or ceramic material for structural support.
13. The balun of claim 10 , wherein the first, second, and third coils include copper or a copper alloy material.
14. The balun of claim 10 , wherein the first, second, and third metallizations have a rectangular or round cross-section.
15. A method of manufacturing a balun, comprising:
forming a first metallization over a substrate patterned as a first coil extending horizontally across the substrate;
forming a second metallization over the substrate patterned as a second coil including a substantially flat vertical profile with respect to the first coil, the second metallization being magnetically coupled to the first metallization; and
forming a third metallization over the substrate patterned as a third coil adjacent to the first coil and second coil, the third metallization being magnetically coupled to the first metallization and second metallization;
arranging the first, second, and third metallizations over the substrate as a single integrated structure.
16. The method of claim 15 , wherein the first, second, and third coils include copper or a copper alloy material.
17. The method of claim 15 , wherein the first, second, and third metallizations have a rectangular cross-section or round cross-section.
18. The method of claim 15 , wherein the substrate is made with silicon, glass, or ceramic material for structural support.
19. The method of claim 15 , further including forming the first, second, and third metallizations on a semiconductor device.
20. A method of making a balun, comprising:
forming a first metallization over a substrate patterned as a first coil;
forming a second metallization over the substrate patterned as a second coil, the second metallization being magnetically coupled to the first metallization; and
forming a third metallization over the substrate patterned as a third coil adjacent to the first coil and second coil, the third metallization being magnetically coupled to the first metallization and second metallization.
21. The method of claim 20 , further including arranging the first, second, and third metallizations over the substrate as a single integrated structure.
22. The method of claim 20 , wherein the first coil extends horizontally across the substrate and the second coil and third coil have a substantially flat vertical profile with respect to the first coil.
23. The method of claim 20 , wherein the first, second, and third coils include copper or a copper alloy material.
24. The method of claim 20 , wherein the first, second, and third metallizations have a rectangular cross-section or round cross-section.
25. The method of claim 20 , wherein the substrate includes silicon, glass, or ceramic material for structural support.
26. The method of claim 20 , further including forming the first, second, and third metallizations on a semiconductor device.
27. A balun device, comprising:
a first metallization formed over a substrate patterned as a first coil;
a second metallization formed over the substrate patterned as a second coil, the second metallization being magnetically coupled to the first metallization; and
a third metallization formed over the substrate patterned as a third coil adjacent to the first coil and second coil, the third metallization being magnetically coupled to the first metallization and second metallization.
28. The balun device of claim 27 , wherein the first, second, and third metallizations are arranged over the substrate as a single integrated structure.
29. The balun device of claim 27 , wherein the first coil extends horizontally across the substrate and the second coil and third coil have a substantially flat vertical profile with respect to the first coil.
30. The balun device of claim 27 , wherein the first, second, and third coils include copper or a copper alloy material.
31. The balun device of claim 27 , wherein the first, second, and third metallizations have a rectangular cross-section or round cross-section.
32. The balun device of claim 27 , wherein the substrate includes silicon, glass, or ceramic material for structural support.
33. The balun device of claim 27 , wherein the first, second, and third metallizations are formed on a semiconductor device.