Semiconductor device and method of forming stepped-down RDL and recessed THV in peripheral region of the device
A semiconductor die has a peripheral region around the die. An insulating layer is formed over the semiconductor die. A portion of the insulating layer and peripheral is removed to form a recess around the semiconductor die. A conductive layer is deposited over the insulating layer and recess. The conductive layer is electrically connected to contact pads on the semiconductor die and conforms to a step into the recess. A gap is created through the conductive layer and peripheral region around the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. The conductive THV is recessed with respect to a surface of the semiconductor die. The conductive THV is electrically connected to the conductive layer.
1. A semiconductor device, comprising:
a semiconductor wafer having a plurality of semiconductor die each with a peripheral region around the semiconductor die;
an insulating layer formed over the semiconductor wafer;
a recess formed around the semiconductor die by removing a portion of the insulating layer and peripheral region;
a first conductive layer formed over the insulating layer and recess, the first conductive layer being electrically connected to contact pads on the semiconductor die and conforming to a step into the recess;
an insulating material deposited in a gap formed through the first conductive layer and peripheral region around the semiconductor die; and
a conductive through hole via (THV) formed in the insulating material, the conductive THV being recessed with respect to a surface of the semiconductor die, the conductive THV being electrically connected to the first conductive layer.
2. The semiconductor device of claim 1 , wherein the semiconductor wafer is singulated through the conductive THV in the gap to form a conductive half-via.
3. The semiconductor device of claim 1 , wherein the semiconductor wafer is singulated through the insulating material in the gap to form a conductive full-via.
4. The semiconductor device of claim 1 , further including a masking layer formed over the insulating material.
5. The semiconductor device of claim 1 , wherein a portion of the insulating layer is removed to expose the contact pads.
6. The semiconductor device of claim 1 , wherein the semiconductor wafer is cut less than a width of the peripheral region around the semiconductor die and the semiconductor die are moved apart to expand the gap.
7. The semiconductor device of claim 1 , further including a second conductive layer formed over the insulating material and conductive THV to electrically connect the conductive THV to the first conductive layer.
8. A semiconductor device, comprising:
a semiconductor wafer having a plurality of semiconductor die each with a peripheral region around the semiconductor die;
an insulating layer formed over the semiconductor wafer;
a recess formed around the semiconductor die by removing a portion of the insulating layer and peripheral region;
an insulating material deposited in a gap formed through the peripheral region around the semiconductor die;
a conductive layer formed over the insulating layer and insulating material, the conductive layer being electrically connected to contact pads on the semiconductor die; and
a conductive through hole via (THV) formed in the insulating material, the conductive THV being electrically connected to the conductive layer.
9. The semiconductor device of claim 8 , wherein the semiconductor wafer is singulated through the conductive THV in the gap to form a conductive half-via.
10. The semiconductor device of claim 8 , wherein the semiconductor wafer is singulated through the insulating material in the gap to form a conductive full-via.
11. The semiconductor device of claim 8 , further including a masking layer formed over the insulating material.
12. The semiconductor device of claim 8 , wherein a portion of the insulating layer is removed to expose the contact pads.
13. The semiconductor device of claim 8 , wherein the semiconductor wafer is cut less than a width of the peripheral region around the semiconductor die and the semiconductor die are moved apart to expand the gap.
14. A semiconductor device, comprising:
a semiconductor die having a peripheral region around the semiconductor die;
an insulating layer formed over the semiconductor die;
a recess formed around the semiconductor die by removing a portion of the insulating layer and peripheral region;
a first conductive layer formed over the insulating layer and recess, the first conductive layer being electrically connected to contact pads on the semiconductor die and conforming to a step into the recess;
an insulating material deposited in a gap formed through the first conductive layer and peripheral region around the semiconductor die;
a conductive through hole via (THV) formed in the insulating material, the conductive THV being recessed with respect to a surface of the semiconductor die, the conductive THV being electrically connected to the first conductive layer.
15. The semiconductor device of claim 14 , wherein the conductive THV is a half-via.
16. The semiconductor device of claim 14 , wherein the conductive THV is a full-via.
17. The semiconductor device of claim 14 , further including a masking layer formed over the insulating material.
18. The semiconductor device of claim 14 , wherein a portion of the insulating layer is removed to expose the contact pads.
19. The semiconductor device of claim 14 , wherein the conductive THV is formed on multiple sides of the semiconductor die.
20. The semiconductor device of claim 14 , further including a second conductive layer formed over the insulating material and conductive THV to electrically connect the conductive THV to the first conductive layer.
21. A semiconductor device, comprising:
a semiconductor die having a peripheral region;
an insulating layer formed over the semiconductor die;
a first conductive layer formed over the insulating layer and into a recess formed in the peripheral region, the first conductive layer being electrically connected to contact pads on the semiconductor die and conforming to a step into the recess;
an insulating material deposited in a gap formed in the peripheral region of the semiconductor die; and
a conductive through hole via (THV) formed in the insulating material, the conductive THV being recessed with respect to a surface of the semiconductor die, the conductive THV being electrically connected to the first conductive layer.
22. The semiconductor device of claim 21 , wherein the conductive THV is a half-via or full-via.
23. The semiconductor device of claim 21 , further including a second conductive layer electrically connecting the conductive THV to the first conductive layer.
24. The semiconductor device of claim 21 , wherein the conductive THV is formed on multiple sides of the semiconductor die.
25. The semiconductor device of claim 21 , wherein a portion of the insulating layer is removed to expose the semiconductor die.