Semiconductor device with solder bump formed on high topography plated Cu pads
View Patent ↗A semiconductor device has a first conductive layer formed over a substrate. A first insulating layer is formed over the substrate and first conductive layer. A second conductive layer is formed over the first conductive layer and first insulating layer. A second insulating layer is formed over the first insulating layer and second conductive layer. The second insulating layer has a sidewall between a surface of the second insulating material and surface of the second conductive layer. A protective layer is formed over the second insulating layer and surface of the second conductive layer. The protective layer follows a contour of the surface and sidewall of the second insulating layer and second conductive layer. A bump is formed over the surface of the second conductive layer and a portion of the protective layer adjacent to the second insulating layer. The protective layer protects the second insulating layer.
1. A semiconductor device, comprising:
a substrate;
a first conductive layer formed over the substrate;
a first insulating layer formed over the substrate and first conductive layer;
a second conductive layer formed over the first conductive layer and first insulating layer;
a second insulating layer formed over the first insulating layer and second conductive layer, the second insulating layer having an opening with a sidewall between a surface of the second insulating layer and a surface of the second conductive layer;
a protective layer formed over the sidewall of the second insulating layer; and
a bump formed in direct contact with the surface of the second conductive layer and in direct contact with a portion of the protective layer adjacent to the sidewall of the second insulating layer to protect the second insulating layer.
2. The semiconductor device of claim 1 , wherein the protective layer includes an insulating material.
3. The semiconductor device of claim 1 , wherein the protective layer includes a material selected from the group consisting of titanium, titanium-tungsten, tantalum, silicon nitride, silicon dioxide, and silicide.
4. The semiconductor device of claim 1 , further including a third conductive layer formed over the first conductive layer and first insulating layer.
5. The semiconductor device of claim 4 , further including a fourth conductive layer formed over the third conductive layer.
6. A semiconductor device, comprising:
a substrate;
a redistribution layer formed over the substrate;
a first insulating layer formed over the substrate and redistribution layer, the first insulating layer having an opening with a sidewall between a surface of the first insulating layer and a surface of the redistribution layer;
a protective layer formed over the sidewall of the first insulating layer; and
a bump formed in direct contact with the surface of the redistribution layer and in direct contact with a portion of the protective layer to protect the first insulating layer.
7. The semiconductor device of claim 6 , wherein the protective layer includes an insulating material.
8. The semiconductor device of claim 6 , wherein the protective layer includes a material selected from the group consisting of titanium, titanium-tungsten, tantalum, silicon nitride, silicon dioxide, and silicide.
9. The semiconductor device of claim 6 , further including:
an input/output (I/O) pad formed over the substrate;
a second insulating layer formed over the substrate and I/O pad; and
a third conductive layer formed over the I/O pad and second insulating layer.
10. The semiconductor device of claim 9 , further including a fourth conductive layer formed over the third conductive layer.
11. A semiconductor device, comprising:
a substrate;
a first conductive layer formed over the substrate;
a first insulating layer formed over the substrate, the first insulating layer having an opening with a sidewall between a surface of the first insulating layer and a surface of the first conductive layer;
an insulating protective layer formed over the sidewall of the first insulating layer; and
a bump formed over the surface of the first conductive layer and a portion of the insulating protective layer.
12. The semiconductor device of claim 11 , wherein the insulating protective layer includes a material selected from the group consisting of silicon nitride and silicon dioxide.
13. The semiconductor device of claim 11 , further including:
a second conductive layer formed over the substrate;
a second insulating layer formed over the substrate and second conductive layer; and
a third conductive layer formed over the second conductive layer and second insulating layer.
14. The semiconductor device of claim 13 , further including a fourth conductive layer formed over the third conductive layer.
15. A semiconductor device, comprising:
a substrate;
a first conductive layer formed over the substrate;
a first insulating layer formed over the substrate, wherein the first insulating layer includes a sidewall between a surface of the first insulating layer and a surface of the first conductive layer;
a protective layer formed over the first insulating layer; and
a bump formed in direct contact with the first conductive layer, wherein the protective layer protects the first insulating layer.
16. The semiconductor device of claim 15 , wherein the bump is formed over a portion of the protective layer adjacent to the sidewall of the first insulating layer.
17. The semiconductor device of claim 15 , wherein the protective layer includes a material selected from the group consisting of titanium, titanium-tungsten, tantalum, silicon nitride, silicon dioxide, and silicide.
18. The semiconductor device of claim 15 , further including:
a second conductive layer formed over the substrate;
a second insulating layer formed over the substrate and first conductive layer;
a third conductive layer formed over the second conductive layer and second insulating layer; and
a fourth conductive layer formed over the third conductive layer.