Semiconductor device and method of forming ultra thin multi-die face-to-face WLCSP
A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed through the encapsulant around the first and second semiconductor die. A portion of the encapsulant and a portion of a back surface of the first and second semiconductor die is removed. An interconnect structure is formed over the encapsulant and the back surface of the first or second semiconductor die. The interconnect structure is electrically connected to the conductive vias. The carrier is removed. A heat sink or shielding layer can be formed over the encapsulant and first semiconductor die.
1. A method of making a semiconductor device, comprising:
providing a temporary carrier;
providing a plurality of first semiconductor die each including an active surface and back surface opposite the active surface;
mounting the back surfaces of the plurality of first semiconductor die to the temporary carrier;
mounting a plurality of second semiconductor die over the plurality of first semiconductor die with an active surface of each of the plurality of second semiconductor die oriented toward the respective active surfaces of the plurality of first semiconductor die;
forming a plurality of bumps over the active surfaces of the plurality of first semiconductor die around a respective perimeter of each of the plurality of second semiconductor die;
depositing an encapsulant over the plurality of first semiconductor die, the plurality of second semiconductor die, and the temporary carrier;
forming a plurality of conductive vias partially through the encapsulant around the plurality of first semiconductor die and the plurality of second semiconductor die;
removing a first portion of the encapsulant and the plurality of first semiconductor die to expose the conductive vias;
forming a first interconnect structure over the encapsulant and the back surfaces of the plurality of first semiconductor die, the interconnect structure being electrically connected to the conductive vias; and
removing the temporary carrier.
2. The method of claim 1 , further including removing a second portion of the encapsulant and a portion of a back surface of each of the plurality of second semiconductor die opposite the active surfaces.
3. The method of claim 1 , further including forming a conductive layer over the encapsulant and the back surfaces of the plurality of first semiconductor die, the conductive layer being electrically connected to the conductive vias.
4. The method of claim 1 , further including mounting a heat sink over the encapsulant and the back surfaces of the plurality of first semiconductor die or a back surface of the plurality of second semiconductor die.
5. The method of claim 1 , further including forming a shielding layer over the encapsulant and the back surfaces of the plurality of first semiconductor die or a back surface of the plurality of second semiconductor die.
6. The method of claim 1 , further including:
providing an electrical component; and
mounting the electrical component to the semiconductor device, the electrical component being electrically connected to the conductive vias.