Semiconductor device and method of forming prefabricated EMI shielding frame with cavities containing penetrable material over semiconductor die
View Patent ↗A semiconductor device has a plurality of semiconductor die mounted to a temporary carrier. A prefabricated shielding frame has a plate and integrated bodies extending from the plate. The bodies define a plurality of cavities in the shielding frame. A penetrable material is deposited in the cavities of the shielding frame. The shielding frame is mounted over the semiconductor die such that the penetrable material encapsulates the die. The carrier is removed. An interconnect structure is formed over the die, shielding frame, and penetrable material. The bodies of the shielding frame are electrically connected through the interconnect structure to a ground point. The shielding frame is singulated through the bodies or through the plate and penetrable material to separate the die. TIM is formed over the die adjacent to the plate of the shielding frame. A heat sink is mounted over the plate of the shielding frame.
1. A method of making a semiconductor device, comprising:
providing a first semiconductor die;
providing a shielding frame including a plate with a plurality of openings and a body integrated with and extending from the plate to define a cavity;
depositing an encapsulant in the cavity;
disposing the shielding frame over the first semiconductor die to encapsulate the first semiconductor die with excess encapsulant escaping through the openings in the shielding frame; and
forming an interconnect structure over the first semiconductor die.
2. The method of claim 1 , further including forming a conductive via through the encapsulant.
3. The method of claim 1 , further including forming a bump over the first semiconductor die to electrically connect the first semiconductor die to the interconnect structure.
4. The method of claim 1 , further including disposing a heat sink over the shielding frame.
5. The method of claim 1 , further including disposing a second semiconductor die over the first semiconductor die.
6. The method of claim 1 , further including disposing a second semiconductor die adjacent to the first semiconductor die within the shielding frame.
7. A method of making a semiconductor device, comprising:
providing a first semiconductor die;
providing a shielding frame including a plurality of openings and a cavity;
depositing an encapsulant in the cavity;
disposing the shielding frame over the first semiconductor die with excess encapsulant escaping through the openings in the shielding frame; and
forming an interconnect structure over the first semiconductor die.
8. The method of claim 7 , further including forming a conductive via through the encapsulant.
9. The method of claim 7 , further including forming a bump over the first semiconductor die to electrically connect the first semiconductor die to the interconnect structure.
10. The method of claim 7 , further including disposing a heat sink over the shielding frame.
11. The method of claim 7 , further including disposing a second semiconductor die over the first semiconductor die.
12. The method of claim 7 , further including disposing a second semiconductor die adjacent to the first semiconductor die within the shielding frame.
13. The method of claim 7 , wherein the shielding frame includes a plate and a body integrated with and extending from the plate to define the cavity.
14. A method of making a semiconductor device, comprising:
providing a first semiconductor die;
providing a shielding frame including a plurality of openings and a cavity;
depositing an encapsulant in the cavity; and
disposing the shielding frame over the first semiconductor die.
15. The method of claim 14 , further including forming a conductive via through the encapsulant.
16. The method of claim 14 , further including excess encapsulant escaping through the openings in the shielding frame.
17. The method of claim 14 , further including disposing a heat sink over the shielding frame.
18. The method of claim 14 , further including forming an interconnect structure over the first semiconductor die.
19. The method of claim 14 , further including disposing a second semiconductor die adjacent to the first semiconductor die within the shielding frame.
20. The method of claim 14 , wherein the shielding frame includes a plate and a body integrated with and extending from the plate to define the cavity.