Semiconductor device and method of forming a shielding layer between stacked semiconductor die
View Patent ↗A semiconductor device has a first semiconductor die with a shielding layer formed over its back surface. The first semiconductor die is mounted to a carrier. A first insulating layer is formed over the shielding layer. A second semiconductor die is mounted over the first semiconductor die separated by the shielding layer and first insulating layer. A second insulating layer is deposited over the first and second semiconductor die. A first interconnect structure is formed over the second semiconductor die and second insulating layer. A second interconnect structure is formed over the first semiconductor die and second insulating layer. The shielding layer is electrically connected to a low-impedance ground point through a bond wire, RDL, or TSV. The second semiconductor die may also have a shielding layer formed on its back surface. The semiconductor die are bonded through the metal-to-metal shielding layers.
1. A semiconductor device, comprising:
a first semiconductor die;
an electromagnetic interference (EMI) shielding layer formed directly on a surface of the first semiconductor die;
a second semiconductor die disposed over the first semiconductor die and separated from the first semiconductor die by the EMI shielding layer;
an encapsulant deposited around the first semiconductor die and second semiconductor die; and
a first interconnect structure formed over the second semiconductor die and encapsulant.
2. The semiconductor device of claim 1 , further including a second interconnect structure formed over the first semiconductor die and encapsulant opposite the first interconnect structure.
3. The semiconductor device of claim 2 , further including a conductive pillar disposed between the first interconnect structure and second interconnect structure.
4. The semiconductor device of claim 1 , further including a bond wire formed between the EMI shielding layer and second interconnect structure.
5. The semiconductor device of claim 1 , further including a conductive via formed through the first semiconductor die.
6. The semiconductor device of claim 1 , further including a third semiconductor die disposed over the first interconnect structure or second interconnect structure.
7. A semiconductor device, comprising:
a first semiconductor die;
a second semiconductor die disposed over the first semiconductor die;
an electromagnetic interference (EMI) shielding layer disposed between the first semiconductor die and second semiconductor die;
a plurality of conductive pillars disposed around the first semiconductor die and second semiconductor die; and
an encapsulant deposited around the first semiconductor die, second semiconductor die, and conductive pillars.
8. The semiconductor device of claim 7 , further including a first interconnect structure formed over the second semiconductor die.
9. The semiconductor device of claim 8 , further including a second interconnect structure formed over the first semiconductor die opposite the first interconnect structure.
10. The semiconductor device of claim 9 , further including a bond wire formed between the EMI shielding layer and second interconnect structure.
11. The semiconductor device of claim 7 , further including a conductive via formed through the first semiconductor die.
12. A semiconductor device, comprising:
a first semiconductor die;
an electromagnetic interference (EMI) shielding layer formed over a surface of the first semiconductor die;
a second semiconductor die disposed over the first semiconductor die and separated from the first semiconductor die by the EMI shielding layer; and
a first interconnect structure formed over the second semiconductor die.
13. The semiconductor device of claim 12 , further including an encapsulant deposited around the first semiconductor die and second semiconductor die.
14. The semiconductor device of claim 12 , further including a second interconnect structure formed over the first semiconductor die opposite the first interconnect structure.
15. The semiconductor device of claim 14 , further including a conductive pillar disposed between the first interconnect structure and second interconnect structure.
16. The semiconductor device of claim 12 , further including a bond wire formed between the EMI shielding layer and second interconnect structure.
17. The semiconductor device of claim 12 , further including a conductive via formed through the first semiconductor die.
18. The semiconductor device of claim 12 , further including an insulating layer disposed between the first semiconductor die and second semiconductor die.
19. A semiconductor device, comprising:
a first semiconductor die;
an electromagnetic interference (EMI) shielding layer formed over a surface of the first semiconductor die;
a second semiconductor die disposed over the first semiconductor die and separated from the first semiconductor die by the EMI shielding layer; and
an encapsulant deposited around the first semiconductor die and second semiconductor die.
20. The semiconductor device of claim 19 , further including a first interconnect structure formed over the second semiconductor die.
21. The semiconductor device of claim 20 , further including a second interconnect structure formed over the first semiconductor die opposite the first interconnect structure.
22. The semiconductor device of claim 21 , further including a conductive pillar disposed between the first interconnect structure and second interconnect structure.
23. The semiconductor device of claim 21 , further including a bond wire formed between the EMI shielding layer and second interconnect structure.
24. The semiconductor device of claim 19 , further including a conductive via formed through the first semiconductor die.
25. The semiconductor device of claim 19 , further including an insulating layer disposed between the first semiconductor die and second semiconductor die.