Semiconductor device and method of making TSV interconnect structures using encapsulant for structural support
A semiconductor device includes a substrate and a via extending through the substrate. A first insulating layer is disposed on sidewalls of the via. An electrically conductive material is disposed in the via over the first insulating layer to form a TSV. A first interconnect structure is disposed over a first side of the substrate. A semiconductor die or a component is mounted to the first interconnect structure. An encapsulant is disposed over the first interconnect structure and semiconductor die or component. A second interconnect structure is disposed over the second side of the substrate. The second interconnect structure is electrically connected to the TSV. The second interconnect structure includes a second insulating layer disposed over the second surface of the substrate and TSV, and a first conductive layer disposed over the TSV and in contact with the TSV through the second insulating layer.
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a conductive via partially through a first surface of the substrate;
forming an interconnect structure over the first surface of the substrate;
disposing a semiconductor component over the interconnect structure;
depositing an encapsulant over the interconnect structure and the semiconductor component; and
removing a portion of a second surface of the substrate opposite the first surface.
2. The method of claim 1 , further including depositing a conductive paste over the interconnect structure.
3. The method of claim 1 , wherein forming the interconnect structure further includes:
forming a first conductive layer over the conductive via;
forming a first insulating layer over the first conductive layer;
forming a second conductive layer over the first insulating layer; and
forming a second insulating layer over the second conductive layer and first insulating layer.
4. The method of claim 3 , wherein forming the interconnect structure further includes:
forming a conductive pillar over the second conductive layer;
forming a third insulating layer around the conductive pillar; and
forming a third conductive layer over the conductive pillar and electrically connected to the semiconductor component.
5. The method of claim 1 , wherein a thickness of the substrate is in a range of 10 μm to 50 μm.
6. The method of claim 1 , wherein a thickness of the substrate is less than 300 μm.
7. A method of making a semiconductor device, comprising:
providing a substrate;
forming a conductive via through the substrate;
forming an interconnect structure over the substrate;
disposing a semiconductor die over the interconnect structure; and
depositing an encapsulant over the semiconductor die.
8. The method of claim 7 , further including forming a conductive layer over the conductive via.
9. The method of claim 7 , wherein forming the interconnect structure further includes:
forming a first conductive layer over the conductive via;
forming a first insulating layer over the first conductive layer;
forming a second conductive layer over the first insulating layer; and
forming a second insulating layer over the second conductive layer and first insulating layer.
10. The method of claim 7 , further including forming a bump over the conductive via.
11. The method of claim 7 , wherein a thickness of the substrate is in a range of 10 μm to 50 μm.
12. The method of claim 7 , wherein a thickness of the substrate is less than 300 μm.
13. A method of making a semiconductor device, comprising:
providing a substrate;
forming a conductive via through the substrate;
disposing a semiconductor die over the conductive via; and
depositing an encapsulant over the semiconductor die.
14. The method of claim 13 , further including forming an interconnect structure over the substrate.
15. The method of claim 14 , wherein forming the interconnect structure further includes:
forming a first conductive layer over the conductive via;
forming a first insulating layer over the first conductive layer;
forming a second conductive layer over the first insulating layer; and
forming a second insulating layer over the second conductive layer and first insulating layer.
16. The method of claim 15 , wherein forming the interconnect structure further includes:
forming a conductive pillar over the second conductive layer;
forming a third insulating layer around the conductive pillar; and
forming a third conductive layer over the conductive pillar and electrically connected to the semiconductor die.
17. The method of claim 13 , wherein a thickness of the substrate is in a range of 10 μm to 50 μm.
18. The method of claim 13 , wherein a thickness of the substrate is less than 300 μm.
19. The method of claim 13 , further including forming a bump over the conductive via.
20. A semiconductor device, comprising:
a substrate;
a conductive via formed through the substrate;
a semiconductor die disposed over the conductive via; and
an encapsulant deposited over the semiconductor die.
21. The semiconductor device of claim 20 , further including an interconnect structure formed over the substrate with the semiconductor die disposed over the interconnect structure.
22. The semiconductor device of claim 21 , wherein the interconnect structure includes:
a first conductive layer over the conductive via;
a first insulating layer over the first conductive layer;
a second conductive layer over the first insulating layer; and
a second insulating layer over the second conductive layer and first insulating layer.
23. The semiconductor device of claim 22 , wherein the interconnect structure further includes:
a conductive pillar over the second conductive layer;
a third insulating layer around the conductive pillar; and
a third conductive layer over the conductive pillar and electrically connected to the semiconductor die.
24. The semiconductor device of claim 20 , wherein a thickness of the substrate is in a range of 10 μm to 50 μm.
25. The semiconductor device of claim 20 , wherein a thickness of the substrate is less than 300 μm.