IP Library › Assignment 009605/0813
Patent Assignment
Reel/Frame 009605/0813

Change of Name

Recorded: 1998-12-07 Pages: 6
Assignor
GI CORPORATION
Executed: 1993-07-22
Assignee
GENERAL INSTRUMENT CORPORATION OF DELAWARE
2200 BYBERRY ROAD, HATBORO, PENNSYLVANIA, 19040
Covered Properties (48)
Tuner Driving Mechanism Permitting Play in Location of Input Member
Patent: 4,186,612 →
Application: 05/861,857 →
Low Profile Pushbutton Tuner with Improved Carriage Moving Mechanism
Patent: 4,191,058 →
Application: 05/912,410 →
Chemical Vapor Deposition Reactor with Infrared Reflector
Patent: 4,284,867 →
Application: 06/010,746 →
Method of Obtaining Polycrystalline Silicon and Workpiece Useful There In
Patent: 4,238,436 →
Application: 06/037,864 →
Method of Cooling Induction-Heated Vapor Deposition Apparatus and Cooling Apparatus Therefor
Patent: 4,293,755 →
Application: 06/140,293 →
Mesh Gate V-Mos Power Fet
Patent: 4,379,305 →
Application: 06/154,280 →
Storage Logic Array Having Two Conductor Data Column
Patent: 4,414,547 →
Application: 06/312,188 →
Single Bobbin Transformer Having Multiple Delink Windings and Method of Making Same
Patent: 4,473,811 →
Application: 06/352,226 →
Susceptor for Radiant Absorption Heater System
Patent: 4,499,354 →
Application: 06/433,158 →
Reactor and Susceptor for Chemical Vapor Deposition Process
Patent: 4,522,149 →
Application: 06/553,962 →
Method and Apparatus for Assembling Semiconductor Devices Such as Leds or Optodetectors
Patent: 4,590,667 →
Application: 06/643,064 →
Rectifier with Slug Construction and Mold for Fabricating Same
Patent: 4,564,885 →
Application: 06/648,672 →
Schottky Barrier Device and Method of Manufacture
Patent: 4,638,551 →
Application: 06/703,703 →
Method for Forming High Yield Epitaxial Wafers
Patent: 4,659,400 →
Application: 06/750,488 →
Method for Fabricating a Rectifying P-N Junction Having Improved Breakdown Voltage Characteristics
Patent: 4,740,477 →
Application: 06/784,451 →
Schottky Barrier Device with Doped Composite Guard Ring
Patent: 4,742,377 →
Application: 06/922,532 →
A Rectifying P-N Junction Having Improved Breakdown Voltage Characteristics and Method for Fabricating Same
Patent: 4,891,685 →
Application: 07/142,737 →
Wafer Level Process for Fabricating Passinated Semiconductor Devices
Patent: 4,904,610 →
Application: 07/143,916 →
Method for Setting the Threshold Voltage of a Vertical Power Mosfet
Patent: 4,859,621 →
Application: 07/150,755 →
Method of Fabricating a Brazed Glass Pre-Passivated Chip Rectifier
Patent: 4,942,139 →
Application: 07/151,066 →
Square Body Leadless Electrical Device
Patent: 4,829,406 →
Application: 07/164,219 →
Brazing Material
Patent: 4,921,158 →
Application: 07/314,808 →
Alternate Pulse Inversion Encoding Scheme for Serial Data Transmission
Patent: 4,897,854 →
Application: 07/315,557 →
Method for Setting the Threshold Voltage of a Power Mosfet
Patent: 4,929,987 →
Application: 07/358,883 →
Method of Making a Passivated P-N Junction in a Mesa Semiconductor Structure
Patent: 4,980,315 →
Application: 07/365,519 →
Method for Fabricating a Rectifying Semiconductor Junction Having Improved Breakdown Voltage Characteristics
Patent: 5,010,023 →
Application: 07/404,604 →
Brazed Glass Pre-Passivated Chip Rectifier
Patent: 4,987,476 →
Application: 07/480,367 →
Method for Controlling the Switching Speed of Bipolar Power Devices
Patent: 5,097,308 →
Application: 07/492,117 →
Method for Controlling the Switching Speed of Bipolar Power Devices
Patent: 5,102,810 →
Application: 07/684,682 →
Surface Mountable Rectifier and Method for Fabricating Same
Patent: 5,151,846 →
Application: 07/748,876 →
Surface Mounting Diode
Patent: 5,248,902 →
Application: 07/752,749 →
Hermetic Surface Mount Package for a Two Terminal Semiconductor Device
Patent: 5,528,079 →
Application: 07/811,726 →
Low Capacitance Silicon Transient Suppressor with Monolithic Structure
Patent: 5,245,412 →
Application: 07/836,491 →
Semiconductor Devices Having Copper Terminal Leads
Patent: 5,304,429 →
Application: 07/856,715 →
Passivated Mesa Semiconductor and Method for Making Same
Patent: 5,166,769 →
Application: 07/884,325 →
Surge Protection Circuit Module and Method for Assembling Same
Patent: 5,371,647 →
Application: 07/917,778 →
Method for Making Passivated Mesa Semiconductor
Patent: 5,278,095 →
Application: 07/921,900 →
Method for Fabricating a Multilayer Epitaxial Structure
Patent: 5,324,685 →
Application: 08/015,384 →
Low Cost Method of Fabricating Epitaxial Semiconductor Devices
Patent: 5,360,509 →
Application: 08/021,130 →
Method of Growing a Semiconductor Material by Epilaxy
Patent: 5,342,805 →
Application: 08/082,951 →
Method of Making Semiconductor Devices Using Epitaxial Techniques Techniques to Form Si/Si-Ge Interfaces and Inverting the Material
Patent: 5,298,457 →
Application: 08/082,952 →
Semiconductor Devices Having a Mesa Structure and Method of Fabrication for Improved Surface Voltage Breakdown Characteristics
Patent: 5,399,901 →
Application: 08/230,299 →
Method for Fabricating a Multilayer Epitaxial Structure
Patent: 5,432,121 →
Application: 08/242,877 →
Fabrication of Hybrid Semiconductor Devices
Patent: 5,484,097 →
Application: 08/273,854 →
Automated Assembly of Semiconductor Devices Using a Pair of Lead Frames
Patent: 5,506,174 →
Application: 08/274,009 →
Low Cost Method of Fabricating Shallow Junction, Schottky Semi- Conductor Devices
Patent: 5,635,414 →
Application: 08/409,762 →
Gas Flow System for Cvd Reactor
Patent: 5,571,329 →
Application: 08/411,408 →
Automated Assembly of Semiconductor Devices Using a Pair of Lead Frames
Patent: 5,614,759 →
Application: 08/579,232 →
Related Assignments (23)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignors Interest. Jan 14, 1981
From: MITCHELL MUNI M.
To: GENERAL INSTRUMENT CORPORATION
Reel/Frame 003821/0622 →
Assignment of Assignors Interest. Oct 16, 1981
From: KNAPP, WILLIAM; DUNN, WILLIAM; SMITH, KENT F.
To: GENERAL INSTRUMENT CORPORATION
Reel/Frame 003937/0681 →
Assignment of Assignors Interest. Feb 25, 1982
From: SCHAUBLE, GEORGE L.
To: GENERAL INSTRUMENT CORPORATION; A CORP. OF DE.
Reel/Frame 003983/0356 →
Assignment of Assignors Interest. Oct 6, 1982
From: HILL, LAWRENCE B.; GARBIS, DENNIS; HELLER, ROBERT C.; GRANATA, AMEDEO J.
To: GNERAL INSTRUMENT CORPORATION
Reel/Frame 004057/0340 →
Assignment of Assignors Interest. Nov 21, 1983
From: GARBIS, DENNIS; CHAN, JOSEPH Y.; GRANATA, AMEDEO J.; HELLER, ROBERT C.
To: GENERAL INSTRUMENT CORPORATION
Reel/Frame 004200/0342 →
Assignment of Assignors Interest. Aug 22, 1984
From: SIMON, RALPH E.
To: GENERAL INSTRUMENT CORPORATION A CORP OF DE
Reel/Frame 004302/0629 →
Assignment of Assignors Interest. Nov 16, 1984
From: MCCANN, T. MICHAEL
To: GENERAL INSTRUMENT CORPORATION, A CORP OF DE
Reel/Frame 004368/0285 →
Assignment of Assignors Interest. Jun 27, 1985
From: GARBIS, DANNY; CHAN, JOSEPH J.; GRANATA, AMADEO J.; CONIGLIONE, PHILIP
To: GENERAL INSTRUMENT CORPORATION
Reel/Frame 004425/0486 →
Assignment of Assignors Interest. Oct 4, 1985
From: EINTHOVEN, WILLEM G.; MITCHELL, MUNI M.
To: GENERAL INSTRUMENT CORPORATION 767 FIFTH AVE. NEW YORK, NY 10153 A NY CORP
Reel/Frame 004466/0316 →
Assignment of Assignors Interest. Jan 27, 1988
From: SHYR, RICHARD
To: GENERAL INSTRUMENT CORPORATION, A DE. CORP.
Reel/Frame 004820/0933 →
Assignment of Assignors Interest. Feb 1, 1988
From: KORWIN-PAWLOWSKI, MICHAEL
To: GENERAL INSTRUMENT CORPORATION, A CORP. OF DE.
Reel/Frame 004831/0042 →
Assignment of Assignors Interest. Feb 1, 1988
From: EINTHOVEN, WILLEM G.
To: GENERAL INSTRUMENT CORPORATION, A CORP. OF DE.
Reel/Frame 004822/0934 →
Assignment of Assignors Interest. Mar 4, 1988
From: KORWIN-PAWLOWSKI, MICHAEL
To: GENERAL INSTRUMENT CORPORATION, A DE. CORP.
Reel/Frame 004859/0917 →
Assignment of Assignors Interest. Feb 24, 1989
From: HWANG, KUEN-SHYANG; SEDIGH, MOHAMMAD; ROTH, MARK
To: GENERAL INSTRUMENT CORPORATION
Reel/Frame 005049/0431 →
Assignment of Assignors Interest. Feb 24, 1989
From: HARRIS, JOHN; BAILEY, NIGEL
To: GENERAL INSTRUMENT CORPORATION
Reel/Frame 005049/0448 →
Assignment of Assignors Interest. Jun 13, 1989
From: EINTHOVEN, WILLIAM G.; DOWN, LINDA J.
To: GENERAL INSTRUMENT CORPORATION
Reel/Frame 005089/0934 →
Change of Name Dec 4, 1998
From: GENERAL INSTRUMENT CORPORATION
To: GI CORPORATION
Reel/Frame 009614/0290 →
Merger Dec 10, 1998
From: GENERAL INSTRUMENT CORPORATION OF DELAWARE
To: GENERAL INSTRUMENT CORPORATION
Reel/Frame 009614/0579 →
Change of Name Dec 16, 1998
From: GENERAL INSTRUMENT CORPORATION
To: GENERAL SEMICONDUCTOR, INC.
Reel/Frame 009624/0532 →
Security Interest Nov 12, 1999
From: GENERAL SEMICONDUCTOR, INC.
To: CHASE MANHATTAN BANK, AS ADMINISTRATIVE AGENT, THE
Reel/Frame 010388/0894 →
Terminaiton and Release of Security Interest in Patent Rights Jan 8, 2002
From: CHASE MANHATTAN BANK, THE, AS ADMINISTRATIVE AGENT
To: GENERAL SEMICONDUCTOR, INC.
Reel/Frame 012376/0244 →
Release of Security Interest Feb 11, 2002
From: THE CHASEMANHATTAN BANK
To: GENERAL SENICODUCT
Reel/Frame 012559/0302 →
Security Interest Feb 4, 2003
From: VISHAY INTERTECHNOLOGY, INC.; VISHAY DALE ELECTRONICS, INC. (DELAWARE CORPORATION); VISHAY EFI, INC. (RHODE ISLAND CORPORATION); VISHAY SPRAGUE, INC. (DELAWARE CORPORATION)
To: COMERICA BANK, AS AGENT
Reel/Frame 013712/0412 →