Patent Assignment
Reel/Frame 012559/0302
Release of Security Interest
Recorded: 2002-02-11
Pages: 10
Assignor
THE CHASEMANHATTAN BANK
Executed: 2001-11-02
Assignee
GENERAL SENICODUCT
10 MELVILLE PARK RD, MELVILLE, NEW YORK, 11747
Covered Properties
(56)
Chemical Vapor Deposition Reactor with Infrared Reflector
Patent:
4,284,867 →
Application:
06/010,746 →
Method of Obtaining Polycrystalline Silicon and Workpiece Useful There In
Patent:
4,238,436 →
Application:
06/037,864 →
Method of Obtaining Polycrystalline Silicon and Workpiece Useful Therein
Patent:
4,271,235 →
Application:
06/106,767 →
Method of Cooling Induction-Heated Vapor Deposition Apparatus and Cooling Apparatus Therefor
Patent:
4,293,755 →
Application:
06/140,293 →
Susceptor for Radiant Absorption Heater System
Patent:
4,499,354 →
Application:
06/433,158 →
Reactor and Susceptor for Chemical Vapor Deposition Process
Patent:
4,522,149 →
Application:
06/553,962 →
Two Terminal Axial Lead Suppressor and Diode Bridge Device
Patent:
4,599,636 →
Application:
06/587,392 →
Method and Apparatus for Assembling Semiconductor Devices Such as Leds or Optodetectors
Patent:
4,590,667 →
Application:
06/643,064 →
Rectifier with Slug Construction and Mold for Fabricating Same
Patent:
4,564,885 →
Application:
06/648,672 →
Schottky Barrier Device and Method of Manufacture
Patent:
4,638,551 →
Application:
06/703,703 →
Method for Forming High Yield Epitaxial Wafers
Patent:
4,659,400 →
Application:
06/750,488 →
Method for Fabricating a Rectifying P-N Junction Having Improved Breakdown Voltage Characteristics
Patent:
4,740,477 →
Application:
06/784,451 →
Schottky Barrier Device with Doped Composite Guard Ring
Patent:
4,742,377 →
Application:
06/922,532 →
Method and Apparatus for Insulating High Voltage Semiconductor Structures
Patent:
4,789,886 →
Application:
07/005,412 →
A Rectifying P-N Junction Having Improved Breakdown Voltage Characteristics and Method for Fabricating Same
Patent:
4,891,685 →
Application:
07/142,737 →
Wafer Level Process for Fabricating Passinated Semiconductor Devices
Patent:
4,904,610 →
Application:
07/143,916 →
Method for Setting the Threshold Voltage of a Vertical Power Mosfet
Patent:
4,859,621 →
Application:
07/150,755 →
Method of Fabricating a Brazed Glass Pre-Passivated Chip Rectifier
Patent:
4,942,139 →
Application:
07/151,066 →
Square Body Leadless Electrical Device
Patent:
4,829,406 →
Application:
07/164,219 →
Brazing Material
Patent:
4,921,158 →
Application:
07/314,808 →
Method for Setting the Threshold Voltage of a Power Mosfet
Patent:
4,929,987 →
Application:
07/358,883 →
Method of Making a Passivated P-N Junction in a Mesa Semiconductor Structure
Patent:
4,980,315 →
Application:
07/365,519 →
Method for Fabricating a Rectifying Semiconductor Junction Having Improved Breakdown Voltage Characteristics
Patent:
5,010,023 →
Application:
07/404,604 →
Packaged Diode for High Temperature Operation
Patent:
5,008,735 →
Application:
07/447,213 →
Brazed Glass Pre-Passivated Chip Rectifier
Patent:
4,987,476 →
Application:
07/480,367 →
Method for Controlling the Switching Speed of Bipolar Power Devices
Patent:
5,097,308 →
Application:
07/492,117 →
Method for Controlling the Switching Speed of Bipolar Power Devices
Patent:
5,102,810 →
Application:
07/684,682 →
Surface Mountable Rectifier and Method for Fabricating Same
Patent:
5,151,846 →
Application:
07/748,876 →
Surface Mounting Diode
Patent:
5,248,902 →
Application:
07/752,749 →
Hermetic Surface Mount Package for a Two Terminal Semiconductor Device
Patent:
5,528,079 →
Application:
07/811,726 →
Low Capacitance Silicon Transient Suppressor with Monolithic Structure
Patent:
5,245,412 →
Application:
07/836,491 →
Semiconductor Devices Having Copper Terminal Leads
Patent:
5,304,429 →
Application:
07/856,715 →
Passivated Mesa Semiconductor and Method for Making Same
Patent:
5,166,769 →
Application:
07/884,325 →
Surge Protection Circuit Module and Method for Assembling Same
Patent:
5,371,647 →
Application:
07/917,778 →
Method for Making Passivated Mesa Semiconductor
Patent:
5,278,095 →
Application:
07/921,900 →
Method for Fabricating a Multilayer Epitaxial Structure
Patent:
5,324,685 →
Application:
08/015,384 →
Low Cost Method of Fabricating Epitaxial Semiconductor Devices
Patent:
5,360,509 →
Application:
08/021,130 →
Method of Growing a Semiconductor Material by Epilaxy
Patent:
5,342,805 →
Application:
08/082,951 →
Method of Making Semiconductor Devices Using Epitaxial Techniques Techniques to Form Si/Si-Ge Interfaces and Inverting the Material
Patent:
5,298,457 →
Application:
08/082,952 →
Surge Protector Semiconductor Subassembly for 3-Lead Transistor Outline Pakcage
Patent:
5,512,784 →
Application:
08/229,555 →
Semiconductor Devices Having a Mesa Structure and Method of Fabrication for Improved Surface Voltage Breakdown Characteristics
Patent:
5,399,901 →
Application:
08/230,299 →
Method for Fabricating a Multilayer Epitaxial Structure
Patent:
5,432,121 →
Application:
08/242,877 →
Fabrication of Hybrid Semiconductor Devices
Patent:
5,484,097 →
Application:
08/273,854 →
Automated Assembly of Semiconductor Devices Using a Pair of Lead Frames
Patent:
5,506,174 →
Application:
08/274,009 →
Electroplating Apparatus
Application:
08/282,914 →
Low Cost Method of Fabricating Shallow Junction, Schottky Semi- Conductor Devices
Patent:
5,635,414 →
Application:
08/409,762 →
Gas Flow System for Cvd Reactor
Patent:
5,571,329 →
Application:
08/411,408 →
Lead with Slits for Reducing Solder Overflow and Eliminating Air Gaps in the Execution of Solder Joints
Patent:
5,631,806 →
Application:
08/509,378 →
Electroplating Apparatus
Patent:
5,817,220 →
Application:
08/541,605 →
Mesa Semiconductor Structure
Patent:
5,610,434 →
Application:
08/554,749 →
Apparatus for the Injection Molding of Semiconductor Elements
Patent:
5,698,242 →
Application:
08/580,070 →
High Voltage Silicon Diode with Optimum Placement of Silicon-Germanium Layers
Patent:
5,640,043 →
Application:
08/580,071 →
Planar P-N Junction Semiconductor Structure with Multilayer Passivation
Patent:
5,677,562 →
Application:
08/649,135 →
Semiconductor Device Having a Shorter Switching Time with Low Forward Voltage
Patent:
5,814,874 →
Application:
08/680,669 →
Fabricating Diode with Improved Reverse Energy Characteristics End Start Method For
Patent:
5,930,660 →
Application:
08/953,670 →
Semiconductor Chips Having a Mesa Structure Provided by Sawing
Patent:
5,882,986 →
Application:
09/050,106 →
Related Assignments
(25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignors Interest.
Oct 6, 1982
From: HILL, LAWRENCE B.; GARBIS, DENNIS; HELLER, ROBERT C.; GRANATA, AMEDEO J.
To: GNERAL INSTRUMENT CORPORATION
Reel/Frame 004057/0340 →
Assignment of Assignors Interest.
Nov 21, 1983
From: GARBIS, DENNIS; CHAN, JOSEPH Y.; GRANATA, AMEDEO J.; HELLER, ROBERT C.
To: GENERAL INSTRUMENT CORPORATION
Reel/Frame 004200/0342 →
Assignment of Assignors Interest.
Mar 8, 1984
From: ROBERTS, RONALD L.; PAYNE, WILLARD E.
To: GENERAL SEMICONDUCTOR INDUSTRIES, INC., 2001 N. 10TH PLACE TEMPE, AZ 85281 A CORP OF AZ
Reel/Frame 004238/0595 →
Assignment of Assignors Interest.
Aug 22, 1984
From: SIMON, RALPH E.
To: GENERAL INSTRUMENT CORPORATION A CORP OF DE
Reel/Frame 004302/0629 →
Assignment of Assignors Interest.
Nov 16, 1984
From: MCCANN, T. MICHAEL
To: GENERAL INSTRUMENT CORPORATION, A CORP OF DE
Reel/Frame 004368/0285 →
Assignment of Assignors Interest.
Jun 27, 1985
From: GARBIS, DANNY; CHAN, JOSEPH J.; GRANATA, AMADEO J.; CONIGLIONE, PHILIP
To: GENERAL INSTRUMENT CORPORATION
Reel/Frame 004425/0486 →
Assignment of Assignors Interest.
Oct 4, 1985
From: EINTHOVEN, WILLEM G.; MITCHELL, MUNI M.
To: GENERAL INSTRUMENT CORPORATION 767 FIFTH AVE. NEW YORK, NY 10153 A NY CORP
Reel/Frame 004466/0316 →
Assignment of Assignors Interest.
Jan 27, 1988
From: SHYR, RICHARD
To: GENERAL INSTRUMENT CORPORATION, A DE. CORP.
Reel/Frame 004820/0933 →
Assignment of Assignors Interest.
Feb 1, 1988
From: KORWIN-PAWLOWSKI, MICHAEL
To: GENERAL INSTRUMENT CORPORATION, A CORP. OF DE.
Reel/Frame 004831/0042 →
Assignment of Assignors Interest.
Feb 1, 1988
From: EINTHOVEN, WILLEM G.
To: GENERAL INSTRUMENT CORPORATION, A CORP. OF DE.
Reel/Frame 004822/0934 →
Assignment of Assignors Interest.
Mar 4, 1988
From: KORWIN-PAWLOWSKI, MICHAEL
To: GENERAL INSTRUMENT CORPORATION, A DE. CORP.
Reel/Frame 004859/0917 →
Assignment of Assignors Interest.
Feb 24, 1989
From: HWANG, KUEN-SHYANG; SEDIGH, MOHAMMAD; ROTH, MARK
To: GENERAL INSTRUMENT CORPORATION
Reel/Frame 005049/0431 →
Assignment of Assignors Interest.
Jun 13, 1989
From: EINTHOVEN, WILLIAM G.; DOWN, LINDA J.
To: GENERAL INSTRUMENT CORPORATION
Reel/Frame 005089/0934 →
Assignment of Assignors Interest.
Sep 8, 1989
From: EINTHOVEN, WILLEM G.; MITCHELL, MUNI M.
To: GENERAL INSTRUMENT CORPORATION, A CORP. OF DE
Reel/Frame 005375/0038 →
Assignment of Assignors Interest.
Mar 21, 1990
From: MITCHELL, MUNI M.; SEDIGH, MOHAMMAD; HAMERSKI, ROMAN
To: GENERAL INSTRUMENT, 767 FIRTH AVENUE, NEW YORK, NC, A CORP. OF DE
Reel/Frame 005265/0162 →
Assignment of Assignors Interest.
Mar 21, 1990
From: EDMOND, JOHN A.; WALTZ, DOUGLAS G.
To: CREE RESEARCH, INC., 2810 MERIDIAN PARKWAY, SUITE 176, DURHAM, NC, A CORP. OF NC
Reel/Frame 005265/0159 →
Assignment of Assignors Interest.
Sep 10, 1992
From: GENERAL INSTRUMENT CORPORATION NEW YORK, NEW YORK
To: CREE RESEARCH, INC.
Reel/Frame 006285/0835 →
Assignment of Assignors Interest.
Nov 19, 1992
From: GENERAL SEMICONDUCTOR INDUSTRIES, INC.
To: GI CORPORATION
Reel/Frame 006363/0579 →
Change of Name
Dec 4, 1998
From: GENERAL INSTRUMENT CORPORATION
To: GI CORPORATION
Reel/Frame 009614/0290 →
Change of Name
Dec 7, 1998
From: GI CORPORATION
To: GENERAL INSTRUMENT CORPORATION OF DELAWARE
Reel/Frame 009605/0813 →
Merger
Dec 10, 1998
From: GENERAL INSTRUMENT CORPORATION OF DELAWARE
To: GENERAL INSTRUMENT CORPORATION
Reel/Frame 009614/0579 →
Change of Name
Dec 16, 1998
From: GENERAL INSTRUMENT CORPORATION
To: GENERAL SEMICONDUCTOR, INC.
Reel/Frame 009624/0532 →
Security Interest
Nov 12, 1999
From: GENERAL SEMICONDUCTOR, INC.
To: CHASE MANHATTAN BANK, AS ADMINISTRATIVE AGENT, THE
Reel/Frame 010388/0894 →
Change of Name
May 17, 2000
From: CREE RESEARCH, INC.
To: CREE, INC.
Reel/Frame 010832/0545 →
Terminaiton and Release of Security Interest in Patent Rights
Jan 8, 2002
From: CHASE MANHATTAN BANK, THE, AS ADMINISTRATIVE AGENT
To: GENERAL SEMICONDUCTOR, INC.
Reel/Frame 012376/0244 →